Integrated circuit and method of forming the same

1. A flip-flop comprising:

a first set of transistors of a first type being located in a first row, the first row extending in a first direction; and

a second set of transistors of a second type being located in a second row, the second row extending in the first direction and being separated from the first row in a second direction different from the first direction, the second type being different from the first type;

wherein the first set of transistors and the second set of transistors include a first master latch circuit and a second master latch circuit, and the first master latch circuit and the second master latch circuit are separated from each other in the first direction by a first distance;

wherein a first output signal of the first master latch circuit and the second master latch circuit is a first input signal of the first master latch circuit and the second master latch circuit; and

a second output signal of the first master latch circuit and the second master latch circuit is a second input signal of the first master latch circuit and the second master latch circuit.

2. The flip-flop of claim 1 , wherein

a third output signal of the first master latch circuit is a third input signal of the first master latch circuit; and

a third output signal of the second master latch circuit is a third input signal of the second master latch circuit.

3. The flip-flop of claim 1 , further comprising:

a third set of transistors of the second type being located in a third row, the third row extending in the first direction and being separated from the first row and the second row in the second direction;

a fourth set of transistors of the first type being located in a fourth row, the fourth row extending in the first direction and being separated from the first row, the second row and the third row in the second direction;

wherein the third set of transistors and the fourth set of transistors include a first slave latch circuit and a second slave latch circuit, and the first slave latch circuit and the second slave latch circuit are separated from each other in the first direction by a second distance; and

wherein the first master latch circuit and the first slave latch circuit are coupled together; and the second master latch circuit and the second slave latch circuit are coupled together.

4. The flip-flop of claim 3 , wherein

a first output signal of the first slave latch circuit and the second slave latch circuit is a first input signal of the first slave latch circuit and the second slave latch circuit;

a second output signal of the first slave latch circuit and the second slave latch circuit is a second input signal of the first slave latch circuit and the second slave latch circuit.

5. The flip-flop of claim 4 , wherein

a third output signal of the first slave latch circuit is a third input signal of the first slave latch circuit; and

a third output signal of the second slave latch circuit is a third input signal of the second slave latch circuit.

6. The flip-flop of claim 5 , wherein the first set of transistors, the second set of transistors, the third set of transistors and the fourth set of transistors further include:

a multiplexer configured to output a first signal on a first output node;

a first stacked gate circuit coupled to the multiplexer by the first output node and being coupled to the first master latch circuit, and configured to output the third output signal of the first master latch circuit to a first input node of the first master latch circuit; and

a second stacked gate circuit coupled to the multiplexer by the first output node and being coupled to the second master latch circuit, and configured to output the third output signal of the second master latch circuit to a first input node of the second master latch circuit.

7. The flip-flop of claim 6 , wherein the first set of transistors, the second set of transistors, the third set of transistors and the fourth set of transistors further include:

a third stacked gate circuit coupled between the first stacked gate circuit and the first slave latch circuit, and configured to receive the third output signal of the first master latch circuit, and configured to output the third input signal of the first slave latch circuit to a first input node of the first slave latch circuit; and

a fourth stacked gate circuit coupled between the second stacked gate circuit and the second slave latch circuit, and configured to receive the third output signal of the second master latch circuit, and configured to output the third input signal of the second slave latch circuit to a first input node of the second slave latch circuit.

8. The flip-flop of claim 7 , wherein the first set of transistors, the second set of transistors, the third set of transistors and the fourth set of transistors further include:

a first clock circuit configured to receive an input clock signal, and to generate a first clock signal and a second clock signal, the first clock circuit being coupled to at least the first master latch circuit and the first slave latch circuit; and

a second clock circuit configured to receive the input clock signal, and to generate a third clock signal and a fourth clock signal, the second clock circuit being coupled to at least the second master latch circuit and the second slave latch circuit.

9. The flip-flop of claim 3 , further comprising:

a first active region extending in the first direction, being on a first level of a substrate, and the first active region corresponding to the first set of transistors;

a second active region extending in the first direction, being on the first level, and being separated from the first active region in the second direction, the second active region corresponding to the second set of transistors;

a third active region extending in the first direction, being on the first level, and being separated from the first active region and the second active region in the second direction, the third active region corresponding to the third set of transistors; and

a fourth active region extending in the first direction, being on the first level, and being separated from the first active region, the second active region and the third active region in the second direction, the fourth active region corresponding to the fourth set of transistors.

10. The flip-flop of claim 9 , wherein

the first active region has a first width;

the second active region has the first width;

the third active region has the first width; and

the fourth active region has the first width.

11. The flip-flop of claim 3 , wherein

the first distance is at least 400 nanometers; and

the second distance is at least 400 nanometers.

12. A flip-flop comprising:

a first set of transistors of a first type being located in a first row, the first row extending in a first direction;

a second set of transistors of a second type being located in a second row, the second row extending in the first direction and being separated from the first row in a second direction different from the first direction, the second type being different from the first type;

a third set of transistors of the second type being located in a third row, the third row extending in the first direction and being separated from the first row and the second row in the second direction; and

a fourth set of transistors of the first type being located in a fourth row, the fourth row extending in the first direction and being separated from the first row, the second row and the third row in the second direction;

wherein the first set of transistors and the second set of transistors include a first master latch circuit and a first slave latch circuit, and the first master latch circuit and the first slave latch circuit are separated from each other in the first direction by at least a first distance;

wherein the third set of transistors and the fourth set of transistors include a second slave latch circuit and a second master latch circuit, and the second slave latch circuit and the second master latch circuit are separated from each other in the first direction by at least a second distance; and

wherein the first master latch circuit and the first slave latch circuit are coupled together, and the second master latch circuit and the second slave latch circuit are coupled together.

13. The flip-flop of claim 12 , wherein

the first master latch circuit and the second master latch circuit are separated from each other in the first direction by the first distance; and

the first slave latch circuit and the second slave latch circuit are separated from each other in the first direction by the second distance.

14. The flip-flop of claim 13 , wherein

the first distance is at least 400 nanometers; and

the second distance is at least 400 nanometers.

15. The flip-flop of claim 12 , wherein

a first output signal of the first slave latch circuit and the second slave latch circuit is a first input signal of the first slave latch circuit and the second slave latch circuit; and

a second output signal of the first slave latch circuit and the second slave latch circuit is a second input signal of the first slave latch circuit and the second slave latch circuit.

16. The flip-flop of claim 15 , wherein

a first output signal of the first master latch circuit and the second master latch circuit is a first input signal of the first master latch circuit and the second master latch circuit;

a second output signal of the first master latch circuit and the second master latch circuit is a second input signal of the first master latch circuit and the second master latch circuit;

a third output signal of the first slave latch circuit is a third input signal of the first slave latch circuit; and

a third output signal of the second slave latch circuit is a third input signal of the second slave latch circuit.

17. The flip-flop of claim 12 , wherein the first set of transistors and the second set of transistors further include:

a first inverter configured to receive an input clock signal, and to generate a first clock signal inverted from the input clock signal, the first inverter being coupled to at least the first master latch circuit and the first slave latch circuit; and

a second inverter configured to receive the input clock signal, and to generate a second clock signal inverted from the input clock signal, the second inverter being coupled to at least the second master latch circuit and the second slave latch circuit.

18. The flip-flop of claim 17 , wherein the third set of transistors and the fourth set of transistors further include:

a third inverter configured to receive the first clock signal, and to generate a third clock signal inverted from the first clock signal, the third inverter being coupled to at least the first inverter, the first master latch circuit and the first slave latch circuit; and

a fourth inverter configured to receive the second clock signal, and to generate a fourth clock signal inverted from the second clock signal, the fourth inverter being coupled to at least the second inverter, the second master latch circuit and the second slave latch circuit.

19. The flip-flop of claim 12 , further comprising:

a first active region extending in the first direction, being on a first level of a substrate, and the first active region corresponding to the first set of transistors;

a second active region extending in the first direction, being on the first level, and being separated from the first active region in the second direction, the second active region corresponding to the second set of transistors;

a third active region extending in the first direction, being on the first level, and being separated from the first active region and the second active region in the second direction, the third active region corresponding to the third set of transistors; and

a fourth active region extending in the first direction, being on the first level, and being separated from the first active region, the second active region and the third active region in the second direction, the fourth active region corresponding to the fourth set of transistors;

wherein each of the first active region, the second active region, the third active region, and the fourth active region have a first width.

20. A method of fabricating a flip-flop, the method comprising:

forming a first set of transistors of a first type in a first row, the first row extending in a first direction;

forming a second set of transistors of a second type in a second row, the second row extending in the first direction and being separated from the first row in a second direction different from the first direction, the second type being different from the first type, wherein the first set of transistors and the second set of transistors include a first master latch circuit and a second master latch circuit, and the first master latch circuit and the second master latch circuit are separated from each other in the first direction by a first distance;

forming a third set of transistors of the second type in a third row, the third row extending in the first direction;

forming a fourth set of transistors of the first type in a fourth row, the fourth row extending in the first direction and being separated from the third row in the second direction, wherein the third set of transistors and the fourth set of transistors include a first slave latch circuit and a second slave latch circuit, and the first slave latch circuit and the second slave latch circuit are separated from each other in the first direction by a second distance;

electrically coupling the first master latch circuit and the second master latch circuit together; and

electrically coupling the first slave latch circuit and the second slave latch circuit together.