Multilayer electronic component
A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction, and a cover portion disposed on end surfaces of the capacitance forming portion; and an external electrode disposed on the body, wherein a ratio of an average content of zirconium (Zr) included in the capacitance forming portion to an average content of zirconium (Zr) included in the cover portion satisfies 0.55 or more and 1.00 or less, wherein an average content of zirconium (Zr) included in the capacitance forming portion satisfies 1073 ppm or more and 1950 ppm or less, and wherein an average size of the dielectric grains included in a central region of the capacitance forming portion is 200 nm or more and 300 nm or less, and a standard deviation for a size is 100 nm or more and 130 nm or less.
1. A multilayer electronic component, comprising:
a body including a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction, and a cover portion disposed on each of both end surfaces of the capacitance forming portion in the first direction; and
an external electrode disposed on the body,
wherein a ratio of an average content of zirconium (Zr) included in the capacitance forming portion to an average content of zirconium (Zr) included in the cover portion satisfies 0.55 or more and 1.00 or less,
wherein an average content of zirconium (Zr) included in the capacitance forming portion satisfies 1073 ppm or more and 1950 ppm or less, and
wherein an average size of dielectric grains included in a central region of the capacitance forming portion is 200 nm or more and 300 nm or less, with a standard deviation that is 100 nm or more and 130 nm or less.
2. The multilayer electronic component of claim 1 , wherein an average size of dielectric grains included in a region of the capacitance forming portion adjacent to the cover portion is 130 nm or more and 150 nm or less.
3. The multilayer electronic component of claim 2 , wherein a standard deviation for the average size of the dielectric grains included in the region of the capacitance forming portion adjacent to the cover portion is 70 nm or more and 90 nm or less.
4. The multilayer electronic component of claim 1 , wherein an average content of zirconium (Zr) included in the cover portion is greater than 1950 ppm and less than 2910 ppm.
5. The multilayer electronic component of claim 1 , wherein an average size of dielectric grains included in the cover portion is greater than an average size of dielectric grains included in a central region of the capacitance forming portion.
6. The multilayer electronic component of claim 1 ,
wherein the body comprises first and second surfaces opposing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction, and
wherein the body further includes a side margin portion disposed on each of the fifth and sixth surfaces of the body.
7. The multilayer electronic component of claim 6 , wherein an average size of dielectric grains included in a region of the capacitance forming portion adjacent to the side margin portion is 200 nm or more and 250 nm or less.
8. The multilayer electronic component of claim 7 , wherein a standard deviation for the average size of the dielectric grains included in the region of the capacitance forming portion adjacent to the side margin portion is 100 nm or more and 115 nm or less.
9. The multilayer electronic component of claim 6 , wherein an average size of dielectric grains included in a region of the capacitance forming portion simultaneously adjacent to the cover portion and the side margin portion is 160 nm or more and 180 nm or less.
10. The multilayer electronic component of claim 9 , wherein a standard deviation of the average size of the dielectric grains included in the region of the capacitance forming portion simultaneously adjacent to the cover portion and the side margin portion is 80 nm or more and 90 nm or less.
11. The multilayer electronic component of claim 6 , wherein an average content of zirconium (Zr) included in the side margin portion is greater than 1950 ppm and less than 2910 ppm.
12. The multilayer electronic component of claim 6 , wherein an average size of dielectric grains included in the side margin portion is greater than an average size of the dielectric grains included in the central region of the capacitance forming portion.
13. The multilayer electronic component of claim 6 , wherein an average size of the dielectric layer in the first direction is 0.6 μm or less.
14. The multilayer electronic component of claim 6 , wherein an average size of at least one of the internal electrodes in the first direction is 0.6 μm or less.
15. The multilayer electronic component of claim 6 , wherein an average size of the side margin portion in the third direction is 20 μm or less.
16. The multilayer electronic component of claim 1 , wherein an average size of the cover portion in the first direction is 20 μm or less.
17. A method of manufacturing the multilayer electronic component of claim 1 , comprising first and second milling dielectric powder with zirconia beads to form dielectric particles, wherein the second milling is performed at a peripheral speed faster than that of the first milling.
18. The method of claim 17 , further comprising sintering the milled dielectric particles to form the dielectric layer.
19. The method of claim 17 , wherein the dielectric powder is milled with a dispersing agent.
20. The method of claim 19 , wherein the dielectric powder is milled with a solvent.