Substrate processing method
A substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film is provided.
1 . A substrate processing method comprising:
providing a substrate having a gap in a surface thereof into a reaction space;
partially filling the gap with a flowable first silicon nitride film;
forming a first silicon oxide film partially filled in the gap by converting the first silicon nitride film into the first silicon oxide film;
fully filling the gap, which is partially filled with the first silicon oxide film, with a second silicon nitride film; and
forming a second silicon oxide film, by converting the second silicon nitride film into the second silicon oxide film, wherein the gap is fully filled after forming the second silicon oxide film.
2 . The substrate processing method of claim 1 , wherein the second silicon nitride film comprises a maximum thickness T 1 on a top portion of a convex between the gap and an adjacent gap and a thickness T 2 in the gap, wherein Tl is 25% or less of T 2 .
3 . The substrate processing method of claim 1 , further comprising forming an additional silicon oxide film over the entire surface of the second silicon oxide film.
4 . The substrate processing method of claim 1 , further comprising performing a post-treatment of densifying the second silicon oxide film.
5 . The substrate processing method of claim 1 , wherein the first silicon nitride film fills up to half of a depth of the gap.
6 . The substrate processing method of claim 1 , wherein, when a thickness at which the conversion into the first silicon oxide film from a surface of the first silicon nitride film is saturated over a process time is defined as a saturation thickness, a thickness of the first silicon nitride film is within the saturation thickness.
7 . The substrate processing method of claim 1 , wherein forming the first or second silicon nitride film is performed by supplying a silicon precursor and a nitrogen reactant gas into the reaction space and maintaining the reaction space in a plasma atmosphere.
8 . The substrate processing method of claim 7 , wherein the silicon precursor comprises at least one of an aminosilane, or a silicon-containing oligomer.
9 . The substrate processing method of claim 7 , wherein the silicon precursor comprises at least one of TSA, (SiH 3 ) 3 N; DSO, (SiH 3 ) 2 ; DSMA, (SiH 3 ) 2 NMe; DSEA, (SiH 3 ) 2 NEt; DSIPA, (SiH 3 ) 2 N(iPr); DSTBA, (SiH 3 ) 2 N(tBu); DEAS, SiH 3 NEt 2 ; DTBAS, SiH 3 N(tBu) 2 ; BDEAS, SiH 2 (NEt 2 ) 2 ; BDMAS, SiH 2 (NMe 2 ) 2 ; BTBAS, SiH 2 (NHtBu) 2 ; BITS, SiH 2 (NHSiMe 3 ) 2 ; DIPAS, SiH 3 N(iPr) 2 ; TEOS, Si(OEt) 4 ; SiCl 4 ; HCD, Si 2 Cl 6 ; 3DMAS, SiH(N(Me) 2 ) 3 ; BEMAS, SiH 2 [N(Et)(Me)] 2 ; AHEAD, Si 2 (NHEt) 6 ; TEAS, Si(NHEt) 4 ; Si 3 H 8 ; DCS, SiH 2 Cl 2 ; dimer-trisilylamine, trimer-trisilylamine, tetramer-trisilylamine, pentamer-trisilylamine, hexamer-trisilylamine, heptamer-trisilylamine, and octamer-trisilylamine, or any mixtures thereof.
10 . The substrate processing method of claim 7 , wherein the nitrogen reactant gas comprises at least one selected from NH 3 , N 2 , N 2 O, NO 2 , N 2 H 2 , N 2 H 4 , and any mixtures thereof.
11 . The substrate processing method of claim 1 , wherein the converting of the first silicon nitride film into the first silicon oxide film is performed by flowing an oxygen-containing gas in the reaction space.
12 . The substrate processing method of claim 11 , wherein the oxygen-containing gas comprises at least one of an O 3 gas and an oxygen radical.
13 . The substrate processing method of claim 1 , wherein converting the first silicon nitride film into the first silicon oxide film is performed in the reaction space in a non-plasma atmosphere.
14 . The substrate processing method of claim 1 , wherein forming the first silicon nitride film and forming the second silicon nitride film are performed under the same process condition.
15 . The substrate processing method of claim 1 , wherein a ratio between a process time of forming the first silicon nitride film and a process time of the forming of the first silicon oxide film is within a range of about 1:1 to about 1:20.
16 . The method of claim 3 , wherein the step of forming the additional silicon oxide film is performed by a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.
17 . A substrate processing method comprising:
providing a substrate having a gap in a surface thereof into a reaction space;
performing a first deposition step of depositing the gap with a flowable first silicon nitride film;
performing a first conversion step of converting the first silicon nitride film that is deposited in the gap into a first silicon oxide film;
performing a second deposition step of depositing a flowable second silicon nitride film on the first silicon oxide film in the gap; and
performing a second conversion step of converting the second silicon nitride film in the gap into a second silicon oxide film.
18 . The substrate processing method of claim 17 , the second deposition step is controlled such that a maximum thickness T 1 of the first silicon nitride film formed on a top portion of a convex between the gap and an adjacent gap is 25% or less of a maximum thickness T 2 of the first silicon nitride film filling the gap.
19 . The substrate processing method of claim 17 , further comprising forming an additional silicon oxide film over the entire surface of the second silicon oxide film.
20 . The substrate processing method of claim 17 , further comprising, after the second conversion step, performing a post-treatment of densifying the second silicon oxide film.
21 . The substrate processing method of claim 17 , wherein the first deposition step and the first conversion step are each performed twice or more; or a preset process time.
22 . The substrate processing method of claim 17 , wherein, when a thickness at which the conversion into the first silicon oxide film from the surface of the first silicon nitride film is saturated over the process time is defined as a saturation thickness, a thickness of the first silicon nitride film is within the saturation thickness.
23 . The substrate processing method of claim 17 , wherein the first conversion step and the second conversion step are each performed in a non-plasma atmosphere, while flowing an oxygen containing gas in the reaction space.