Substrate processing apparatus and method
The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.
1. A substrate processing apparatus comprising:
a reaction chamber;
a substrate rack for holding a plurality of substrates in the reaction chamber in a spaced apart relationship configured to rotate the substrate rack about an axis; and
an illumination system constructed and arranged to irradiate ultraviolet radiation comprising a wavelength within a range from 100 to 500 nanometers onto a top surface of at least one of the substrates in the substrate rack from a side of the substrate rack;
wherein a power controller is configured to at least one of switch off and limit power to a part of the illumination system to limit an amount of radiation hitting the substrate rack as it rotates around the axis.
2. The apparatus of claim 1 , wherein the power controller is configured to limit the electromagnetic radiation hitting the substrate rack such that a reduced amount of electromagnetic radiation is received by the substrate rack as compared to the electromagnetic radiation received by the at least one of the substrates.
3. The apparatus of claim 1 , wherein the power controller is configured to utilize information pertaining to a shape of the substrate rack and a rotational position of the substrate rack in order to limit the amount of radiation hitting the substrate rack as it rotates around the axis.
4. The apparatus according to claim 1 , wherein the apparatus comprises a heater for heating the substrates in the reaction chamber.
5. The apparatus according to claim 1 , wherein the apparatus is arranged to rotate the substrate rack around a vertical axis and the illumination system is arranged horizontally displaced from said vertical axis.
6. The apparatus according to claim 1 , wherein the illumination system is constructed and arranged to limit the radiation beam emitted from a side of the substrate rack downwards to a top surface of the substrate held in the substrate rack, such that an average direction of the radiation beam is limited to an angle between 60 to 90° with respect to a line perpendicular to the surface of the substrate.
7. The apparatus according to claim 1 , wherein the illumination system is constructed and arranged to limit the radiation beam emitted from a side of the substrate rack downwards to a top surface of the substrate held in the substrate rack, such that an average direction of the radiation beam is limited to an angle between 80 to 89.5° with respect to a line perpendicular to the surface of the substrate.
8. The apparatus according to claim 7 , wherein the illumination system is provided with a radiation transmitting or reflecting surface to direct the ultraviolet radiation to the substrates.
9. The apparatus according to claim 8 , wherein the apparatus is provided with a purge system for purging a radiation transmitting or reflecting surface in the reaction chamber.
10. The apparatus according to claim 8 , wherein the illumination system comprising the radiation transmitting or reflecting surface is provided partially within the reaction chamber.
11. The apparatus according to claim 1 , wherein at least one injector is provided within the reaction chamber for providing a fluid into the reaction chamber.
12. The apparatus according to claim 1 , further comprising a fluid storage comprising an oxidizing fluid for providing oxidizing fluid in the reaction chamber.
13. The apparatus according to claim 1 , further comprising a fluid storage comprising an etchant fluid for providing etchant fluid in the reaction chamber.