Nanorod semiconductor layer having flat upper surface, micro-LED including the nanorod semiconductor layer, pixel plate including micro-LED, display device including the pixel plate, and electronic devices including the pixel plate

1. A nanorod semiconductor layer comprising:

a main body; and

an upper end connected to an upper part of the main body,

wherein the upper end comprises:

a first inclined surface;

a second inclined surface; and

a flat upper surface between the first inclined surface and the second inclined surface,

wherein when a thickness of the upper end in the upward direction is L 1 , an inclination angle between the flat upper surface and a surface extending parallel to a surface selected from the first inclined surface and the second inclined surface is β, and a width of the main body is D, a width D 1 of the flat upper surface satisfies the following equation:

D 1 =D −(2 ×L 1×tanβ).

2. The nanorod semiconductor layer of claim 1 , wherein a width of the upper end becomes narrower in an upward direction away from the main body.

3. The nanorod semiconductor layer of claim 1 , wherein when a height of the main body is H, an aspect ratio (H/D) of the main body satisfies 0.05<H/D<20.

4. The nanorod semiconductor layer of claim 3 , wherein H satisfies 0.5 μm <H<20 μm.

5. The nanorod semiconductor layer of claim 3 , wherein D satisfies 0.05 μm<D<2 μm.

6. The nanorod semiconductor layer of claim 3 , wherein β is about 52±5°.

7. The nanorod semiconductor layer of claim 3 , wherein the thickness L 1 is about 100 nm or less.

8. A micro-light-emitting diode (LED) comprising:

a first semiconductor layer of a first type comprising an n-type or a p-type, the first semiconductor layer comprising a nanorod shape;

a second semiconductor layer of a second type comprising the n-type or the p-type different from the first type, the second semiconductor layer facing the first semiconductor layer;

an active layer disposed between the first semiconductor layer and the second semiconductor layer,

wherein the first semiconductor layer comprises:

a main body; and

an upper end connected to an upper part of the main body,

wherein the upper end comprises

a first inclined surface;

a second inclined surface; and

a flat upper surface between the first inclined surface and the second inclined surface, wherein when a thickness of the upper end in the upward direction is L 1 , an inclination angle between the flat upper surface and a surface extending parallel to a surface selected from the first inclined surface and the second inclined surface is β, and a width of the main body is D, a width D 1 of the flat upper surface satisfies the following equation:

D 1 =D −(2 ×L 1×tanβ).

9. The micro-LED of claim 8 , wherein the active layer comprises a first compound semiconductor layer.

10. The micro-LED of claim 9 , wherein the active layer further comprises a second compound semiconductor layer on the first compound semiconductor layer.

11. The micro-LED of claim 10 , wherein the first compound semiconductor layer and the second compound semiconductor layer comprise same materials with different composition ratios.

12. The micro-LED of claim 8 , wherein a width of the upper end becomes narrower in an upward direction away from the main body.

13. The micro-LED of claim 8 , wherein exposed peripheral surfaces of the first semiconductor layer, the second semiconductor layer, and the active layer are covered with an insulating film.

14. The micro-LED of claim 8 , wherein when a height of the main body is H, an aspect ratio (H/D) of the main body satisfies 0.05<H/D<20.

15. A pixel plate comprising a plurality of pixel regions, wherein each of the plurality of pixel regions comprises:

a first subpixel including a first micro-LED configured to emit a first light;

a second subpixel including a second micro-LED configured to emit a second light; and

a third subpixel including a third micro-LED configured to emit a third light,

wherein each of the first micro-LED, the second micro-LED, and the third micro-LED comprises:

a first semiconductor layer of a first type comprising an n-type or a p-type, the first semiconductor layer comprising a nanorod shape;

a second semiconductor layer of a second type comprising the n-type or the p-type different from the first type, the second semiconductor layer facing the first semiconductor layer; and

an active layer disposed between the first semiconductor layer and the second semiconductor layer,

wherein the first semiconductor layer comprises:

a main body; and

an upper end connected to an upper part of the main body,

wherein the upper end comprises

a first inclined surface;

a second inclined surface; and

a flat upper surface between the first inclined surface and the second inclined surface,

wherein when a thickness of the upper end in the upward direction is L 1 , an inclination angle between the flat upper surface and a surface extending parallel to a surface selected from the first inclined surface and the second inclined surface is β, and a width of the main body is D, a width D 1 of the flat upper surface satisfies the following equation:

D 1 =D −(2 ×L 1×tanβ).

wherein the first micro-LED, the second micro-LED, and the third micro-LED each comprise a same configuration and a same shape, and

wherein the first micro-LED, the second micro-LED, and the third micro-LED each comprise different materials.

16. The pixel plate of claim 15 , wherein a width of the upper end becomes narrower in an upward direction away from the main body.

17. The pixel plate of claim 15 , wherein each of the first subpixel, the second subpixel, and the third subpixel comprises:

two electrodes that are parallel and separated from each other, and

wherein the respective two electrodes are connected to each other by a corresponding micro-LED from among the first micro-LED, the second micro-LED, and the third micro-LED.

18. The pixel plate of claim 15 , wherein a number of micro-LEDs included in the first subpixel is different from a number of micro-LEDs included in each of the second subpixel and the third subpixel.