Memory device and electronic device
A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.
1. A semiconductor device comprising a transistor, the semiconductor device comprising:
a first conductive film comprising a region being a first gate electrode of the transistor;
a first insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film;
a second conductive film comprising a region being a second gate electrode of the transistor, over the second insulating film;
a third insulating film over the second conductive film;
a third conductive film in contact with an upper surface of the third insulating film;
a fourth conductive film in contact with the upper surface of the third insulating film; and
a fifth conductive film in contact with the upper surface of the third insulating film,
wherein the oxide semiconductor film comprises a channel formation region of the transistor,
wherein the third conductive film is electrically connected to the oxide semiconductor film,
wherein the fourth conductive film is electrically connected to the first conductive film,
wherein the fifth conductive film is electrically connected to the second conductive film,
wherein the fourth conductive film comprises a region extending along a first direction, and
wherein the fifth conductive film comprises a region extending along the first direction.
2. The semiconductor device according to claim 1 , wherein in a cross-sectional view of the transistor in a channel length direction, both end portions of the second insulating film overlap with the oxide semiconductor film.
3. A semiconductor device comprising a transistor, the semiconductor device comprising:
a first conductive film comprising a region being a first gate electrode of the transistor;
a first insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film;
a second conductive film comprising a region being a second gate electrode of the transistor, over the second insulating film;
a third insulating film over the second conductive film;
a third conductive film in contact with an upper surface of the third insulating film;
a fourth conductive film in contact with the upper surface of the third insulating film; and
a fifth conductive film in contact with the upper surface of the third insulating film,
wherein the oxide semiconductor film comprises a channel formation region of the transistor,
wherein the third conductive film is electrically connected to the oxide semiconductor film,
wherein the fourth conductive film is electrically connected to the first conductive film,
wherein the fifth conductive film is electrically connected to the second conductive film,
wherein the fourth conductive film comprises a region extending in a first direction,
wherein the fifth conductive film comprises a region extending in the first direction,
wherein the third conductive film comprises a region extending in a direction intersecting with the first direction,
wherein the third insulating film comprises a first opening, a second opening, and a third opening,
wherein the oxide semiconductor film and the third conductive film are electrically connected to each other through the first opening,
wherein the first conductive film and the fourth conductive film are electrically connected to each other through the second opening,
wherein the second conductive film and the fifth conductive film are electrically connected to each other through the third opening,
wherein the first opening overlaps with the oxide semiconductor film,
wherein the second opening does not overlap with the oxide semiconductor film,
wherein the second opening does not overlap with the second conductive film,
wherein the third opening does not overlap with the oxide semiconductor film, and
wherein the third opening does not overlap with the first conductive film.
4. The semiconductor device according to claim 3 , wherein in a cross-sectional view of the transistor in a channel length direction, both end portions of the second insulating film overlap with the oxide semiconductor film.