Photoresist composition and method of forming photoresist pattern
Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: A 1 , A 2 , L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A 3 is C6-C14 aromatic, wherein A 3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R 1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0<x/(x+y+z)<1, 0<y/(x+y+z)<1, and 0<z/(x+y+z)<1.
1. A polymer composition, comprising:
a polymer having a formula:
where A 1 , A 2 , and L are independently a direct bond, a C4-C30 aromatic group, a C4-C30 alkyl group, a C4-C30 cycloalkyl group, a C4-C30 hydroxylalkyl group, a C4-C30 alkoxy group, a C4-C30 alkoxyl alkyl group, a C4-C30 acetyl group, a C4-C30 acetylalkyl group, a C4-C30 alkyl carboxyl group, a C4-C30 cycloalkyl carboxyl group, a C4-C30 saturated or unsaturated hydrocarbon ring, or a C4-C30 heterocyclic group, wherein A 1 and A 2 are not both direct bonds, wherein A 1 and A 2 are unsubstituted or substituted with a halogen, carbonyl group, or hydroxyl group;
A 3 is a C6-C14 aromatic group, wherein A 3 is unsubstituted or substituted with a halogen, carbonyl group, or hydroxyl group;
wherein at least one of A 1 , A 2 , and A 3 is an adamantyl group, a norbornyl group, a phenol group, a hydroxynaphthalene group, a hydroxyanthracene group, a phenyl group, or a naphthalenyl group;
R 1 is an acid labile group;
Ra and Rb are independently H or a C1-C3 alkyl group;
Rf is a direct bond or a C1-C5 fluorocarbon;
PAG includes a triphenylsulfonium group and a sulfonate group; and
0<x/(x+y+z)<1, 0<y/(x+y+z)<1, and 0<z/(x+y+z)<1.
2. The polymer composition of claim 1 , wherein R 1 is a C4-C15 alkyl group, a C4-C15 cycloalkyl group, a C4-C15 hydroxylalkyl group, a C4-C15 alkoxy group, or a C4-C15 alkoxyl alkyl group.
3. The polymer composition of claim 1 , wherein R f is a perfluorinated group.
4. The polymer composition of claim 1 , wherein the polymer has a weight average molecular weight ranging from 500 to 1,000,000.
5. The polymer composition of claim 4 , wherein the polymer has a weight average molecular weight ranging from 2,000 to 250,000.
6. The polymer composition of claim 1 , wherein L is a direct bond, A 3 is a p-phenol group, and 0.2≤ x/(x+y+z)≤0.5.
7. The polymer composition of claim 1 , wherein A 1 is not a direct bond and 0.2≤ y/(x+y+z)≤0.7.
8. The polymer composition of claim 1 , wherein A 2 is not a direct bond and 0.05≤ z/(x+y+z)≤0.5.
9. The polymer composition of claim 1 , wherein 0.1≤ x/(x+y+z)≤0.5.
10. The polymer composition of claim 1 , wherein A 1 is not a direct bond and 0.2≤ y/(x+y+z)≤0.7 and 0.1≤ x/(x+y+z)≤0.5.
11. A composition, comprising:
a polymer,
wherein the polymer has a formula:
where L is a direct bond, a C4-C30 aromatic group, a C4-C30 alkyl group, a C4-C30 cycloalkyl group, a C4-C30 hydroxylalkyl group, a C4-C30 alkoxy group, a C4-C30 alkoxyl alkyl group, a C4-C30 acetyl group, a C4-C30 acetylalkyl group, a C4-C30 alkyl carboxyl group, a C4-C30 cycloalkyl carboxyl group, a C4-C30 saturated or unsaturated hydrocarbon ring, or a C4-C30 heterocyclic group;
A 1 and A 2 are independently a direct bond, a C4-C30 aromatic group, a C4-C30 alkyl group, a C4-C30 cycloalkyl group, a C4-C30 hydroxylalkyl group, a C4-C30 alkoxy group, a C4-C30 alkoxyl alkyl group, a C4-C30 acetyl group, a C4-C30 acetylalkyl group, a C4-C30 alkyl carboxyl group, a C4-C30 cycloalkyl carboxyl group, a C4-C30 saturated or unsaturated hydrocarbon ring, or a C4-C30 heterocyclic group, and A 1 and A 2 are unsubstituted or substituted with a halogen, carbonyl group, or hydroxyl group;
A 3 is a phenol group, hydroxynaphthalene group, or hydroxyanthracene group;
R 1 is an acid labile group;
Ra and Rb are independently H or a C1-C3 alkyl group;
Rf is a direct bond or a C1-C5 fluorocarbon;
PAG is a photoacid generator; and
0.2≤y/(x+y+z)≤0.7, 0.05≤z/(x+y+z)≤0.5, and 0.1≤x/(x+y+z)≤0.5.
12. The composition of claim 11 , wherein A 1 and A 2 are independently a chain, ring, or three-dimensional structure.
13. The composition of claim 12 , wherein at least one of A 1 and A 2 is a three-dimensional structure selected from an adamantyl or a norbornyl structure.
14. The composition of claim 11 , wherein R 1 is a C4-C15 alkyl group, a C4-C15 cycloalkyl group, a C4-C15 hydroxylalkyl group, a C4-C15 alkoxy group, or a C4-C15 alkoxyl alkyl group.
15. The composition of claim 11 , wherein the photoacid generator includes a triphenylsulfonium group and a sulfonate group.
16. The composition of claim 11 , wherein R f is a perfluorinated group.
17. The composition of claim 11 , wherein the polymer has a weight average molecular weight ranging from 500 to 1,000,000.
18. A method, comprising:
depositing a photoresist layer over a substrate,
wherein the photoresist layer comprises a composition, comprising:
a polymer having a formula:
where A 1 , A 2 , and L are independently a direct bond, a C4-C30 aromatic group, a C4-C30 alkyl group, a C4-C30 cycloalkyl group, a C4-C30 hydroxylalkyl group, a C4-C30 alkoxy group, a C4-C30 alkoxyl alkyl group, a C4-C30 acetyl group, a C4-C30 acetylalkyl group, a C4-C30 alkyl carboxyl group, a C4-C30 cycloalkyl carboxyl group, a C4-C30 saturated or unsaturated hydrocarbon ring, or a C4-C30 heterocyclic group, wherein A 1 and A 2 are not both direct bonds, wherein A 1 and A 2 are unsubstituted or substituted with a halogen, carbonyl group, or hydroxyl group;
A 3 is a C6-C14 aromatic group, wherein A 3 is unsubstituted or substituted with a halogen, carbonyl group, or hydroxyl group;
wherein at least one of A 1 , A 2 , and A 3 is an adamantyl group, a norbornyl group, a phenol group, a hydroxynaphthalene group, a hydroxyanthracene group, a phenyl group, or a naphthalenyl group;
R 1 is an acid labile group;
Ra and Rb are independently H or a C1-C3 alkyl group;
Rf is a direct bond or a C1-C5 fluorocarbon; and
PAG includes a triphenylsulfonium group and a sulfonate group; and
0<x/(x+y+z)<1, 0<y/(x+y+z)<1, and 0<z/(x+y+z)<1; and
a photoactive compound;
selectively exposing the photoresist layer to actinic radiation; and
removing a portion of the photoresist layer exposed to the actinic radiation to form a pattern exposing portions of the substrate.
19. The method according to claim 18 , further comprising etching exposed portions of the substrate to extend the pattern in the photoresist layer into the substrate.
20. The method according to claim 18 , wherein A 3 is a phenol group, hydroxynaphthalene group, or hydroxyanthracene group.