Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes a plasma processing chamber; a base; an electrostatic chuck; a plurality of electrode layers disposed in the same plane within the electrostatic chuck; a switch group including a plurality of first switches electrically connected to the electrode layers, respectively; a power supply and a measurement unit that are electrically connected to the switch group; a second switch that selects either the power supply or the measurement unit as a connection destination of the switch group; and a controller. The power supply includes a power source that supplies a power to the electrode layers. The measurement unit includes a resistor and a voltmeter that measures a voltage applied to the resistor. The controller is capable of executing a control operation that includes switching the connection destination of the switch group to the measurement unit and then turning ON the plurality of first switches one by one.
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a base disposed in the plasma processing chamber;
an electrostatic chuck disposed on top of the base;
a plurality of electrode layers disposed in a same plane within the electrostatic chuck;
a switch group including a plurality of first switches electrically connected to the plurality of electrode layers, respectively;
a power supply and a gauge that are electrically connected to the switch group,
a second switch configured to select either the power supply or the gauge as a connection destination of the switch group; and
a controller,
wherein the power supply includes a power source that supplies a power to the plurality of electrode layers,
the gauge includes a resistor and a voltmeter that measures a voltage applied to the resistor, and
the controller is configured to execute a control operation that includes switching the connection destination of the switch group to the gauge and then turning ON the plurality of first switches constituting the switch group one by one.
2. The plasma processing apparatus according to claim 1 , wherein the gauge includes a capacitor disposed between the power supply and the switch group.
3. The plasma processing apparatus according to claim 1 , wherein the electrode a layers are heater electrode layers.
4. The plasma processing apparatus according to claim 1 , wherein the electrostatic chuck further includes a clamping electrode layer, and
the electrode layers are disposed on top of the clamping electrode layer.
5. The plasma processing apparatus according to claim 1 , wherein the switch group is disposed inside the base.
6. The plasma processing apparatus according to claim 2 , wherein the capacitor constitutes an RF filter.
7. The plasma processing apparatus according to claim 1 , wherein the controller is configured to execute a control operation that includes switching the connection destination of the switch group to the power supply and turning ON all of the plurality of first switches constituting the switch group, followed by switching the connection destination of the switch group to the gauge and then turning ON the plurality of first switches one by one.
8. A plasma processing method comprising:
providing a plasma processing apparatus including:
a plasma processing chamber;
a base disposed in the plasma processing chamber;
an electrostatic chuck disposed on top of the base;
a plurality of electrode layers disposed in a same plane within the electrostatic chuck;
a switch group including a plurality of first switches electrically connected to the plurality of electrode layers, respectively;
a power supply and a gauge that are electrically connected to the switch group, the power supply including a power source that supplies a power to the plurality of electrode layers, and the gauge including a resistor and a voltmeter that measures a voltage applied to the resistor;
a second switch configured to select either the power supply or the gauge as a connection destination of the switch group; and
a controller;
switching the connection destination of the switch group to the gauge and then turning ON the plurality of first switches constituting the switch group one by one; and
measuring the voltage using the gauge upon turning ON one of the plurality of first switches constituting the switch group.
9. The plasma processing method according to claim 8 , further comprising:
switching the connection destination of the switch group to the power supply and turning ON all of the plurality of first switches constituting the switch group,
wherein the switching the connection destination of the switch group to the power supply is executed, followed by the switching the connection destination of the switch group to the gauge and the measuring.
10. The plasma processing method according to claim 8 , further comprising:
calculating a self-bias voltage for a region in a substrate support corresponding to one of the plurality of first switches, based on the voltage measured in the measuring.