Magnetic memory device
A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.
1. A magnetic memory device comprising:
a first memory cell which includes a first stacked structure; and
a second memory cell which is provided on the first memory cell and includes a second stacked structure,
wherein:
each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a resistance adjustment layer which adjusts a resistance of a respective one of the first stacked structure and the second stacked structure,
the first magnetic layer, the second magnetic layer, the nonmagnetic layer, and the resistance adjustment layer included in each of the first stacked structure and the second stacked structure are stacked in one direction, and
a thickness of the resistance adjustment layer included in the first stacked structure and a thickness of the resistance adjustment layer included in the second stacked structure are different from each other.
2. The magnetic memory device according to claim 1 , wherein the thickness of the resistance adjustment layer included in the second stacked structure is larger than the thickness of the resistance adjustment layer included in the first stacked structure.
3. The magnetic memory device according to claim 1 , wherein the thickness of the resistance adjustment layer included in the second stacked structure is smaller than the thickness of the resistance adjustment layer included in the first stacked structure.
4. The magnetic memory device according to claim 1 , wherein:
the first memory cell further includes a first switching element connected to the first stacked structure, and
the second memory cell further includes a second switching element connected to the second stacked structure.
5. The magnetic memory device according to claim 1 , wherein the resistance adjustment layer contains a metal oxide.
6. The magnetic memory device according to claim 5 , wherein the metal oxide is a magnesium oxide or an aluminum oxide.
7. A magnetic memory device comprising:
a first memory cell which includes a first stacked structure; and
a second memory cell which is provided on the first memory cell and includes a second stacked structure,
wherein:
each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
one of the first stacked structure and the second stacked structure further includes a resistance adjustment layer which adjusts a resistance of the one of the first stacked structure and the second stacked structure,
the other of the first stacked structure and the second stacked structure includes no resistance adjustment layer, and
the first magnetic layer, the second magnetic layer, the nonmagnetic layer, and the resistance adjustment layer included in the one of the first stacked structure and the second stacked structure are stacked in one direction.
8. The magnetic memory device according to claim 7 , wherein the resistance adjustment layer contains a metal oxide.
9. The magnetic memory device according to claim 8 , wherein the metal oxide is a magnesium oxide or an aluminum oxide.
10. The magnetic memory device according to claim 7 , wherein:
the first memory cell further includes a first switching element connected to the first stacked structure, and
the second memory cell further includes a second switching element connected to the second stacked structure.