Slurry, polishing method, and method for producing semiconductor component
A slurry containing: abrasive grains; a compound X having 3 or more carbon atoms; and water, in which the abrasive grains contain cerium oxide, and a dispersion term dD in Hansen solubility parameters of the compound X is 18.0 MPa 1/2 or less. A polishing method including polishing a surface to be polished by using this slurry.
1 . A slurry comprising: abrasive grains; a compound X having 3 or more carbon atoms; and water, wherein
the abrasive grains contain cerium oxide,
a dispersion term dD in Hansen solubility parameters of the compound X is 18.0 MPa 1/2 or less, and
a parameter Y as calculated by the following formula in a dispersion liquid obtained by adjusting a content of the abrasive grains in the slurry to 5.0% by mass is 0.110 g/m 2 or more,
Y={(Inverse number of an NMR relaxation time of the dispersion liquid)/(Inverse number of an NMR relaxation time in a state where the abrasive grains are excluded from the dispersion liquid)−1}/Total surface area S of the abrasive grains.
2 . The slurry according to claim 1 , wherein the abrasive grains are in a colloidal form.
3 . The slurry according to claim 1 , wherein a content of the cerium oxide is 99% by mass or more on the basis of the entire abrasive grains contained in the slurry.
4 . The slurry according to claim 1 , wherein the compound X contains cyclodextrin.
5 . The slurry according to claim 1 , wherein the compound X contains polyglycerol.
6 . The slurry according to claim 5 , wherein a weight average molecular weight of the polyglycerol is 500 to 1000.
7 . The slurry according to claim 1 , wherein the slurry does not comprise a polyol.
8 . The slurry according to claim 1 , wherein the compound X contains hydroxyisobutyric acid.
9 . The slurry according to claim 1 , wherein the compound X contains 2,2-bis(hydroxymethyl) butyric acid.
10 . The slurry according to claim 1 , wherein the compound X contains 2,2-bis(hydroxymethyl) propionic acid.
11 . The slurry according to claim 1 , wherein a content of the compound X is 0.50% by mass or less on the basis of the total mass of the slurry.
12 . The slurry according to claim 1 , wherein a pH is 3.0 to 6.0.
13 . The slurry according to claim 1 , wherein the compound X contains trimethylolethane.
14 . The slurry according to claim 1 , wherein a content of the compound X is 0.050% by mass or less on the basis of the total mass of the slurry.
15 . A polishing method comprising polishing a surface to be polished by using the slurry according to claim 1 .
16 . The polishing method according to claim 15 , wherein the surface to be polished contains silicon oxide.
17 . A method for manufacturing a semiconductor component, the method comprising individually dividing a member having a polished surface polished by the polishing method according to claim 15 to obtain a semiconductor component.
18 . A slurry comprising: abrasive grains; a compound X having 3 or more carbon atoms; and water, wherein
the slurry does not comprise a polyol and a compound having a weight average molecular weight of 3000 or more and having at least one selected from the group consisting of a hydroxy group and an amide group,
the abrasive grains contain cerium oxide, and
a dispersion term dD in Hansen solubility parameters of the compound X is 18.0 MPa 1/2 or less.