Granted Patent B2

US 12,498,615 · App. 18/255,546 · Granted Dec 16, 2025

Inventors: Mona Jarrahi (Los Angeles, CA); Deniz Turan (Santa Clara, CA); Ping-Keng Lu (Oakland, CA)

Assignee: The Regents of the University of California

G02F1/353G02B5/008G02F2201/30G02F2203/13

Abstract

Claims (26)

1 . A wavelength conversion device comprising:

at least one semiconductor substrate; and

at least one conductive layer;

wherein the semiconductor substrate comprises at least one region that has a built-in electric field;

wherein the conductive layer comprises at least one electrode with at least one optical subwavelength dimension; and

wherein the at least one electrode is capable of bending incident optical light to couple with the at least one region that has the built-in electric field to convert the optical wavelength to a different wavelength of the electromagnetic spectrum.

2 . The wavelength conversion device of claim 1 , wherein the built-in electric field is generated by a source selected from the group consisting of: at least one semiconductor surface state, a Schottky contact, and a semiconductor heterostructure.

3 . The wavelength conversion device of claim 1 further comprising, at least one antenna.

4 . The wavelength conversion device of claim 1 , wherein the at least one electrode converts the optical wavelength ranging from 300 nm to 2 microns to a wavelength ranging from 3 mm to 30 microns.

5 . The wavelength conversion device of claim 1 , wherein the wavelength conversion device does not have an external electrical power source.

6 . The wavelength conversion device of claim 1 , wherein the at least one electrode has a structure selected from the group consisting of circular, rectangular, triangular, cross, bow ties, H-shape, and C-shape.

7 . The wavelength conversion device of claim 1 , wherein the at least one electrode is a subwavelength grating.

8 . The wavelength conversion device of claim 1 , wherein the at least one semiconductor substrate comprises silicon, germanium, or an alloy, wherein at least one element of the alloy is selected from the group consisting of indium, aluminum, gallium, arsenic, antimony, phosphorus, silicon, and germanium.

9 . The wavelength conversion device of claim 1 , wherein the at least one semiconductor substrate comprises an intrinsic semiconductor layer and a doped semiconductor layer with a doping density ranging from about 10 16 cm −3 to about 10 19 cm −3 , wherein the semiconductor layer is p-type doped or n-type doped.

10 . The wavelength conversion device of claim 1 , wherein the at least one semiconductor substrate comprises an alloy with a graded composition.

11 . The wavelength conversion device of claim 1 , wherein the at least one conductive layer comprises a material selected from the group consisting of a metal, a high-conductivity semiconductor, and a 2D material.

12 . The wavelength conversion device of claim 11 , wherein the 2D material is graphene.

13 . The wavelength conversion device of claim 1 , wherein the optical light is a femtosecond optical pulse train or a heterodyning optical beam with a beat frequency ranging from 100 GHz to 10 THz.

14 . The wavelength conversion device of claim 1 , further comprising:

at least one electrical insulator layer;

wherein the at least one electrical insulator layer is interposed between the at least one semiconductor substrate and the at least one conductive layer such that only a portion of the at least one electrode directly contacts the at least one semiconductor substrate.

15 . The wavelength conversion device of claim 14 , wherein the at least one electrical insulator layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, and sapphire.

16 . The wavelength conversion device of claim 14 , wherein at least one-tenth of the at least one electrode directly contacts the at least one semiconductor substrate.

17 . The wavelength conversion device of claim 1 , further comprising an optical reflector layer, wherein the optical reflector layer is embedded in the at least one semiconductor substrate.

18 . The wavelength conversion device of claim 17 , wherein the optical reflector layer is selected from the group consisting of: a distributed Bragg reflector (DBR), and a metal layer.

19 . The wavelength conversion device of claim 1 , wherein the at least one semiconductor substrate is patterned.

Assignments (2)

Continuity (3)

References Cited (347)