Photoconductive element
A photoconductive element for performing at least one of generation and detection of terahertz radiation includes a photoconductive layer formed of a semiconductor material and configured to generate photoexcited carriers by being irradiated with excitation light, and a plurality of electrodes provided on the photoconductive layer. The material of the photoconductive layer is a material that makes a depletion layer produced in the photoconductive layer have a thickness smaller than an optical absorption length of the photoconductive layer for a wavelength of the excitation light. A film thickness of the photoconductive layer is adjusted so that the depletion layer is formed over an entirety in a direction of the film thickness within at least a portion of the photoconductive layer between the plurality of electrodes.
1. A photoconductive element for performing at least one of generation and detection of terahertz radiation, comprising:
a photoconductive layer configured to generate photoexcited carriers by being irradiated with excitation light; and
a plurality of electrodes provided on the photoconductive layer,
wherein the material of the photoconductive layer is a material that makes a depletion layer produced in the photoconductive layer have a thickness smaller than an optical absorption length of the photoconductive layer for a wavelength of the excitation light,
wherein the material of the photoconductive layer is a material in which the thickness W of the depletion layer produced in the photoconductive layer is represented by W=(2∈V bi /en) 0.5 ,
where ∈ denotes a dielectric constant of the photoconductive layer, Vbi denotes a built-in potential on a surface of the photoconductive layer, e denotes an elementary charge, and n denotes a carrier density of the photoconductive layer,
wherein a film thickness of the photoconductive layer is selected to the thickness W of the depletion layer within at least a portion of the photoconductive layer between the plurality of electrodes, and
wherein the material of the photoconductive layer is a low-temperature-grown compound semiconductor including three or more elements.
2. The photoconductive element according to claim 1 , wherein a reflection unit configured to reflect the excitation light is arranged in a portion irradiated with the excitation light on a surface of the photoconductive layer opposite to a side to which the excitation light is incident.
3. A terahertz radiation analysis apparatus comprising:
a generation-side photoconductive element configured to generate terahertz radiation;
a detection-side photoconductive element configured to detect the generated terahertz radiation and transmitted through or reflected from a specimen;
a delay unit configured to adjust a delay time between a time at which terahertz radiation is generated and a time at which terahertz radiation is detected; and
a processing unit configured to analyze information about the specimen from an electric current signal obtained in the detection-side photoconductive element,
wherein at least one of the generation-side photoconductive element and the detection-side photoconductive element comprises the photoconductive element according to claim 1 .
4. The apparatus according to claim 3 , wherein a reflection unit configured to reflect the excitation light is arranged in a portion irradiated with the excitation light on a surface of the photoconductive layer of the photoconductive element opposite to a side to which the excitation light is incident.
5. The apparatus according to claim 1 , wherein the material of the photoconductive layer is InGaAs.
6. The apparatus according to claim 3 , wherein the material of the photoconductive layer is InGaAs.