POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESSING,METHOD FOR PREPARING POLISHING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT TO WHICH POLISHING COMPOSITION IS APPLIED

1 . A polishing composition for a semiconductor containing abrasive particles, an accelerator, and a stabilizer,

wherein the stabilizer is a compound represented by Formula 1 below:

wherein

R 1 to R 3 are same as or different from one another and are each independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and

R 1 to R 3 may each independently be combined with an adjacent group to form a ring.

2 . The polishing composition of claim 1 , wherein the compound represented by Formula 1 is a compound represented by Formula 2 or 3 below:

wherein

n is an integer ranging from 0 to 4, and

R 4 and R 5 are the same as or different from each other and are each independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, and a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms.

3 . The polishing composition of claim 1 , wherein the accelerator is selected from the group consisting of metal oxide particles, organic particles, organic-inorganic composite particles, and mixtures thereof.

4 . The polishing composition of claim 1 , wherein the accelerator is selected from the group consisting of anionic small molecules, anionic polymers, hydroxyl acids, amino acids, and cerium salts.

5 . The polishing composition of claim 1 , further containing a surfactant.

6 . The polishing composition of claim 1 , further containing a pH adjusting agent.

7 . The polishing composition of claim 1 , having a value of less than 38% as calculated by Equation 1 below:

(

RR

0

-

RR

f

RR

0

)

×

100

[

Equation

⁢

1

]

wherein

RR 0 is a removal rate measured after performing polishing using the polishing composition under the following polishing conditions:

a temperature of 15 to 25° C., a polishing head rotation speed of 87 rpm, a platen rotation speed of 93 rpm, an injection rate of the polishing composition of 90 ml/min, a polishing time of 60 second, use of a wafer including an amorphous carbon layer having a thickness of 2,000 Å and a size of 4 cm (width)×4 cm (length), and use of a mini-polisher;

RR f is a removal rate measured after performing polishing using the polishing composition under the polishing conditions after storing the polishing composition at 45° C. for 10 hours and cooling the polishing composition to 15 to 25° C.; and

RR 0 and RR f are removal rates obtained by measuring the thicknesses of the amorphous carbon layer before and after performing polishing under the polishing conditions.

8 . A method of preparing a polishing composition for a semiconductor process, the method comprising steps of:

a) preparing a polishing solution by mixing a stabilizer and an accelerator in a solvent;

b) adjusting a pH of the polishing solution to 2 to 5 by adding a pH adjusting agent to the polishing solution; and

c) mixing a surfactant and abrasive particles with the polishing solution having a pH of 2 to 5,

wherein the stabilizer is a compound represented by Formula 1 below:

wherein

R 1 to R 3 are same as or different from one another and are each independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and

R 1 to R 3 may each independently be combined with an adjacent substituent group to form a ring.

9 . The method of claim 8 , wherein step a) comprises:

preparing a mixed solution by mixing the stabilizer with the solvent; and

preparing the polishing solution by mixing the mixed solution with the accelerator.

10 . A method of fabricating a semiconductor, the method comprising steps of:

1) providing a polishing pad comprising a polishing layer;

2) supplying a polishing composition for a semiconductor process to the polishing pad; and

3) polishing a polishing target while allowing the polishing target and the polishing pad to rotate relative to each other so that a polishing-target surface of the polishing target comes into contact with a polishing surface of the polishing layer,

wherein the polishing composition contains abrasive particles, an accelerator, and a stabilizer, wherein the stabilizer is a compound represented by Formula 1 below:

wherein

R 1 to R 3 are the same as or different from one another and are each independently selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and

R 1 to R 3 may each independently be combined with an adjacent substituent to form a ring.