Systems and techniques for optical measurement of thin films
Methods provided herein may include illuminating a region on a wafer within a semiconductor processing tool, the wafer having a layer of a material that is at least semi-transparent to light and has a measurable extinction coefficient, and the region being a first fraction of the wafer's surface, detecting light reflected off the material and off a surface underneath the material using one or more detectors and generating optical data corresponding to the detected light, generating a metric associated with a property of the material on the wafer by applying the optical data to a transfer function that relates the optical data to the metric associated with the property of the material on the wafer, determining an adjustment to one or more processing parameters for a processing module, and performing or modifying a processing operation in the processing module according to the adjusted one or more processing parameters.
1 . A method of processing wafers in a semiconductor processing tool having a processing chamber and an optical metrology module, the method comprising:
illuminating a first region on a first wafer while the first wafer is positioned within the semiconductor processing tool, wherein the first wafer has a first layer of a first material that is at least semi-transparent to light and has a measurable extinction coefficient, and wherein the first region is a first fraction of the first wafer's surface;
detecting, while the first wafer is positioned within the semiconductor processing tool, light reflected off the first material and off a surface underneath the first material in the first region of the first wafer using one or more detectors of the optical metrology module and generating first optical data corresponding to the detected light;
generating a metric associated with a property of the first material on the first wafer by applying the first optical data to a transfer function that relates the first optical data to the metric associated with the property of the first material on the first wafer;
determining, based on the applying, an adjustment to one or more processing parameters for a processing module of the semiconductor processing tool; and
performing or modifying a processing operation in the processing module according to the adjusted one or more processing parameters.
2 . The method of claim 1 , wherein the processing operation is performed on a second wafer that enters the processing module after the first wafer was processed in the processing module.
3 . The method of claim 2 , wherein:
the adjustment causes the first layer of the first material on the second wafer to have a second metric different than the metric, and
the property is an item selected from the group consisting of: thickness, index of refraction, surface roughness, density, and a variation of any of the foregoing over the wafer surface.
4 . The method of claim 2 , wherein:
the adjustment causes the metric of the property of the first material to remain substantially the same during the processing operation, and
the property is selected from the group consisting of: thickness, index of refraction, surface roughness, and density.
5 . The method of claim 2 , further comprising:
Illuminating a second region of the second wafer positioned within the semiconductor processing tool, wherein the second region is a second fraction of the second wafer's surface;
detecting, while the second wafer is positioned within the semiconductor processing tool, light reflected off the first material and off a surface underneath the first material in the second region of the second wafer using the one or more detectors and generating second optical data corresponding to the detected light;
generating a second metric associated with the property of the first material on the second wafer by applying the second optical data to a transfer function that relates the second optical data to the second metric associated with the property of the first material on the second wafer;
determining, based on the applying, a second adjustment to one or more processing parameters for the processing module; and
performing or modifying a second processing operation in the processing module according to the second adjusted one or more processing parameters.
6 . The method of claim 1 , wherein:
generating the first optical data is performed before the first wafer has been fully processed in the processing module, and
performing or modifying the processing operation comprises modifying the processing operation before the first wafer has been fully processed in the processing module.
7 . The method of claim 6 , further comprising, after the performing or modifying:
illuminating a first region on a first wafer while the first wafer is positioned within the semiconductor processing tool;
detecting, while the first wafer is positioned within the semiconductor processing tool, light reflected off the first material and off the surface underneath the first material in the first region of the first wafer using one or more detectors and generating second optical data corresponding to the detected light;
generating a second metric associated with the property of the first material on the first wafer by applying the second optical data to a transfer function that relates the second optical data to the metric associated with the property of the first material on the first wafer;
determining, based on the applying, a second adjustment to one or more processing parameters for a processing module of the semiconductor processing tool; and
performing or modifying a second processing operation in the processing module according to the second adjusted one or more processing parameters.
8 . The method of claim 1 , wherein the adjustment comprises an adjustment to an item selected from the group consisting of: a deposition time, a wafer temperature, a sequencing and/or timing of solution dispensing locations, a flow rate, a chuck rotation speed, a purge gas flow rate, an RF power, an e-beam power, a chamber pressure, a target position and orientation towards substrate, a bias voltage or waveform, precursor flow rate, carrier gas flow rate, or orientation and location of various chamber components to shape a plasma.
9 . The method of claim 1 , wherein the generating comprises determining a difference between the first optical data and target optical data.
10 . The method of claim 9 , further comprising determining whether the difference between the first optical data and the target optical data exceeds a threshold, wherein the determining the adjustment is further based on the determination of whether the difference exceeds the threshold.
11 . The method of claim 1 , wherein:
the first optical data includes a first subset of optical data associated with an interior region of the first wafer and a second subset of optical data associated with an edge region of the first wafer, and
the generating includes determining a difference between the first subset and the second subset.
12 . The method of claim 1 , wherein the generating includes determining a difference between the first optical data and optical data from a second wafer.
13 . The method of claim 1 , further comprising causing relative motion between the first wafer and one or more detectors during the illuminating and the detecting.
14 . The method of claim 1 , wherein the metric is further based on calibration data.
15 . The method of claim 14 , wherein the calibration data is based on target data of target wafers.
16 . The method of claim 1 , wherein the first fraction is at least one fifth the surface area of the first wafer.
17 . The method of claim 16 , wherein the first fraction is at least 80% of the surface area of the first wafer.
18 . The method of claim 1 , wherein:
the processing operation in the processing module deposits material onto a wafer, and
the adjustment to the one or more processing parameters reduces non-uniformity of the deposited material.
19 . The method of claim 1 , wherein the light is white light.
20 . The method of claim 1 , wherein the light has wavelengths between about 375 nm and about 800 nm.