Silicon carbide thermal bridge integrated on a low thermal conductivity substrate and processes implementing the same
A component includes a substrate board; a thermal bridge structured and arranged on the substrate board, where the thermal bridge is configured to transfer heat from the substrate board including an area adjacent to or on a hotspot of the substrate board; where the thermal bridge is configured to transfer the heat to another location on the substrate board for removal of the heat from the substrate board; and where the thermal bridge may include silicon carbide.
1. A component comprising:
a substrate board;
a thermal bridge structured and arranged on the substrate board;
and a first trace on the substrate board,
a first grounded trace on the substrate board,
at least one first via in the substrate board,
and a circuit component on the substrate board,
wherein the thermal bridge is configured to transfer heat from the substrate board including an area adjacent to or on a hotspot of the substrate board;
wherein the thermal bridge is configured to transfer the heat to another location on the substrate board for removal of the heat from the substrate board;
wherein the thermal bridge comprises silicon carbide;
wherein the thermal bridge is configured to transfer heat from the substrate board including an area adjacent the first trace;
wherein the thermal bridge comprises a bottom metal arranged at locations adjacent the first trace and/or the at least one first via; and
wherein the thermal bridge is configured to have matching thermal expansion to the circuit component on the substrate board.
2. The component according to claim 1 wherein the thermal bridge is connected to two points on the substrate board.
3. The component according to claim 1 further comprising a first trace on the substrate board, a first grounded trace on the substrate board, at least one first via in the substrate board, a circuit component on the substrate board, a second grounded trace on the substrate board, and at least one second via in the substrate board,
wherein the thermal bridge is configured to transfer heat from the substrate board including an area adjacent the first trace.
4. The component according to claim 3 wherein the thermal bridge is connected to the first trace and the first grounded trace.
5. The component according to claim 3 wherein the circuit component comprises a surface mounted device (SMD), an SMD capacitor, and/or a capacitor.
6. The component according to claim 3 further comprising a second trace,
wherein the thermal bridge comprises a bottom metal arranged at locations adjacent a first grounded trace and/or the at least one first via; and
wherein the thermal bridge comprises the bottom metal arranged at locations adjacent the second trace.
7. The component according to claim 6 wherein the second trace comprises an inductor.
8. The component according to claim 1 wherein the substrate board comprises a bottom metal configured to transfer heat to and from the at least one first via; and wherein the bottom metal is configured to transfer heat to and from a support.
9. The component according to claim 1
wherein thermal bridge comprises a material that is anisotropic with respect to heat flow that conducts heat better along a particular axis of the material; and
wherein the particular axis that better conducts heat is located parallel to an upper surface of the substrate board.
10. The component according to claim 1
wherein the thermal bridge comprises at least one via, a first top metal, a resistor, a second top metal; and
wherein the resistor is arranged between the first top metal and the second top metal.
11. The component according to claim 10 wherein the second top metal is configured as a wire bonding pad to connect the second top metal to another component.
12. The component according to claim 1 wherein the thermal bridge is configured to connect to an integrated passive device (IPD) component.
13. The component according to claim 12 wherein the integrated passive device (IPD) component is configured as a baseband termination circuit.
14. The component according to claim 1 further comprising a topside heat sink arranged above and connected to the thermal bridge.
15. The component according to claim 14 wherein the thermal bridge is configured as a mechanical support for the topside heat sink.
16. The component according to claim 14 wherein the thermal bridge comprises at least one via.
17. The component according to claim 14 further comprising support stands configured to support the topside heat sink.
18. The component according to claim 17 wherein the support stands are configured to transfer heat from the substrate board to the topside heat sink.
19. A transistor device, comprising the component of claim 1 , the transistor device further comprising:
a metal submount; and
a transistor die arranged on said metal submount,
wherein the component is arranged on said metal submount.
20. The transistor device according to claim 19 wherein the transistor die comprises one or multiple LDMOS transistor die.
21. The transistor device according to claim 19 wherein the transistor die comprises one or multiple GaN based HEMTs.
22. The transistor device according to claim 19 wherein the transistor device comprises a plurality of the transistor die.
23. The transistor device according to claim 22 wherein the plurality of the transistor die are configured in a Doherty configuration.
24. A process of implementing a component comprising:
providing a substrate board; and
arranging a thermal bridge on the substrate board;
and providing a first trace on the substrate board,
a first grounded trace on the substrate board,
at least one first via in the substrate board,
and a circuit component on the substrate board,
wherein the thermal bridge is configured to transfer heat from the substrate board including an area adjacent to or on a hotspot of the substrate board;
wherein the thermal bridge is configured to transfer the heat to another location on the substrate board for removal of the heat from the substrate board;
wherein the thermal bridge comprises silicon carbide;
wherein the thermal bridge is configured to transfer heat from the substrate board including an area adjacent the first trace;
wherein the thermal bridge comprises a bottom metal arranged at locations adjacent the first trace and/or the at least one first via; and
wherein the thermal bridge is configured to have matching thermal expansion to the circuit component on the substrate board.