SEMICONDUCTOR POWER DEVICES HAVING MULTIPLE GATE TRENCHES AND METHODS OF FORMING SUCH DEVICES
A semiconductor device includes a semiconductor layer structure and a gate formed in a gate trench in the semiconductor layer structure. The gate trench has a bottom surface comprising a first portion at a first level and a second portion at a second level, different from the first level. A method of forming a semiconductor device includes providing a semiconductor layer structure, etching a first gate trench into the semiconductor layer structure, etching a second gate trench into the semiconductor layer structure, and performing an ion implantation into a bottom surface of the second gate trench. The second gate trench is deeper than the first gate trench, and at least a portion of the second gate trench is connected to the first gate trench.
1 . A method of forming a semiconductor device, the method comprising:
providing a semiconductor layer structure;
etching a first gate trench into the semiconductor layer structure;
etching a second gate trench into the semiconductor layer structure; and
performing an ion implantation into a bottom surface of the second gate trench,
wherein the second gate trench is deeper than the first gate trench, and
wherein at least a portion of the second gate trench is connected to the first gate trench.
2 . The method of claim 1 , wherein etching the second gate trench is preceded by forming a mask on at least a portion of the first gate trench.
3 . The method of claim 1 , further comprising:
forming a gate insulating layer on the first gate trench and the second gate trench; and
forming a gate electrode on the gate insulating layer.
4 . The method of claim 1 , wherein etching the second gate trench is performed before etching the first gate trench.
5 . The method of claim 4 , wherein etching the first gate trench is preceded by forming a mask on at least a portion of the second gate trench.
6 . The method of claim 4 , wherein the second gate trench extends through a central portion of a bottom surface of the first gate trench, and
wherein portions of the bottom surface of the first gate trench are on opposite sides of the second gate trench.
7 . The method of claim 1 , wherein the semiconductor layer structure comprises a drift region having a first conductivity type, and
wherein the method further comprises processing a corner of the drift region at an interface between the first gate trench and the second gate trench to increase a radius of curvature of the corner.
8 . The method of claim 1 , wherein performing the ion implantation into the bottom surface of the second gate trench comprises performing an angled ion implant.
9 . The method of claim 1 , wherein the semiconductor layer structure comprises a drift region having a first conductivity type and a well region having a second conductivity type, and
wherein performing the ion implantation into the bottom surface of the second gate trench comprises performing the ion implantation of a deep shielding pattern having the second conductivity type into a sidewall and the bottom surface of the second gate trench.
10 . The method of claim 9 , wherein the deep shielding pattern extends to contact at least a portion of the well region.
11 . A method of forming a semiconductor device, the method comprising:
providing a semiconductor layer structure; and
forming a gate in a gate trench in the semiconductor layer structure,
wherein the gate trench has a bottom surface comprising a first portion at a first level and a second portion at a second level, different from the first level.
12 . The method of claim 11 , wherein the semiconductor layer structure comprises a substrate, and
wherein the second level is closer to the substrate than the first level.
13 . The method of claim 12 , wherein the substrate comprises silicon carbide.
14 . The method of claim 11 , wherein providing the semiconductor layer structure comprises:
forming a drift region having a first conductivity type;
forming a well region having a second conductivity type on the drift region; and
forming a deep shielding pattern having the second conductivity type below at least a portion of the bottom surface of the gate trench.
15 . The method of claim 14 , wherein the deep shielding pattern extends to contact at least a portion of the well region.
16 . The method of claim 14 , wherein the gate trench further comprises a first corner between a sidewall of the gate trench and the first portion of the bottom surface of the gate trench, and a second corner between the first portion of the bottom surface of the gate trench and the second portion of the bottom surface of the gate trench.
17 . The method of claim 16 , wherein a second radius of curvature of the second corner is greater than a first radius of curvature of the first corner.
18 . The method of claim 16 , wherein the deep shielding pattern is between the second corner and the drift region.
19 . The method of claim 11 , wherein the bottom surface of the gate trench further comprises a third portion at a third level, and wherein the third portion of the bottom surface of the gate trench is on an opposite side of the second portion of the gate trench from the first portion of the gate trench.
20 . The method of claim 19 , wherein the first level and the third level are at approximately the same level.