Torsional mode quartz crystal device
The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal, wherein each of the tines has formed on one or both of opposing sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction, wherein the pair of groove structures are separated in a horizontal widthwise direction by a line structure. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.
1. A quartz crystal device configured for temperature sensing, comprising:
a quartz crystal comprising first and second elongate arms laterally extending from a base region in a horizontal lengthwise direction of the arms, wherein each arm has formed on each of upper and lower sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction; and
a first electrode and a second electrode formed on the upper and lower sides of each of the first and second elongate arms and configured to be biased at opposite polarities, wherein adjacent ones of the groove structures on a same side of each of the first and second elongate arms have formed therein different ones of the first and second electrodes.
2. The quartz crystal device of claim 1 , wherein the pair of groove structures on the same side of each arm are separated in a horizontal widthwise direction of the arms by a vertically protruding line structure extending in the horizontal lengthwise direction.
3. The quartz crystal device of claim 2 , wherein the first and second electrodes in each of the pairs of vertically recessed groove structures have vertical portions that face each other laterally across the vertically protruding line structure in the horizontal widthwise direction crossing the lengthwise direction.
4. The quartz crystal device of claim 1 , wherein each of the groove structures comprises a rectangular trench having opposing sidewalls connected by a bottom surface.
5. The quartz crystal device of claim 4 , wherein each of the groove structures has formed on at least a portion of at least one of the sidewalls thereof the first electrode or the second electrode.
6. The quartz crystal device of claim 5 , wherein the first electrode or the second electrode formed on the at least one of the sidewalls extends to cover the bottom surface.
7. The quartz crystal device of claim 1 , wherein the first and second electrodes in each of the pairs of vertically recessed groove structures have vertical portions that face each other.
8. The quartz crystal device of claim 7 , wherein the vertical portions face each other in a horizontal widthwise direction crossing the horizontal lengthwise direction.
9. The quartz crystal device of claim 1 , wherein the quartz crystal device has a substantially linear temperature dependence of a resonance frequency, wherein the temperature dependence is such that a coefficient of a linear temperature-dependent term is about 10-50 ppm/° C.
10. The quartz crystal device of claim 1 , wherein the horizontal lengthwise direction corresponds to the X-axis of a quartz crystal from which the quartz crystal is fabricated, and wherein the quartz crystal device has surface normal directions of main surfaces that are rotated between about −40 degrees and +40 degrees relative to the X-axis.
11. The quartz crystal device of claim 1 , wherein the quartz crystal device is hermetically sealed in a package substrate having disposed therein an integrated circuit (IC) die electrically connected to the quartz crystal device and bonded to the package substrate.
12. A quartz crystal device configured for temperature sensing, comprising:
a quartz crystal comprising first and second elongate arms laterally extending from a base region in a horizontal lengthwise direction of the quartz crystal, wherein each arm has formed on each of upper and lower sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction; and
a first electrode and a second electrode formed on the upper and lower sides of each of the first and second elongate arms, wherein the first and second electrodes are configured to be biased at opposite polarities and wherein the groove structures in each of the pairs of vertically recessed groove structures have formed therein different ones of the first and second electrodes.
13. The quartz crystal device of claim 12 , wherein the pair of groove structures on a same side of each arm are separated in a horizontal widthwise direction of the arms by a vertically protruding line structure extending in the horizontal lengthwise direction.
14. The quartz crystal device of claim 13 , wherein the first and second electrodes in each of the pairs of vertically recessed groove structures have vertical portions that face each other laterally across the vertically protruding line structure in the horizontal widthwise direction crossing the horizontal lengthwise direction.
15. The quartz crystal device of claim 14 , wherein the first and second electrodes formed on the same side of each of the first and second elongate arms are in contact with surfaces of a respective one of the line structures.
16. The quartz crystal device of claim 15 , wherein the first and second electrodes formed on the same side of each of the first and second elongate arms are each in contact with different surfaces of the respective one of the line structures.
17. The quartz crystal device of claim 12 , wherein the quartz crystal device has a substantially linear temperature dependence of a resonance frequency, wherein the temperature dependence is such that a coefficient of a linear temperature-dependent term is about 10-50 ppm/° C.
18. The quartz crystal device of claim 12 , wherein the horizontal lengthwise direction corresponds to the X-axis of a quartz crystal from which the quartz crystal is fabricated, and wherein the quartz crystal device has surface normal directions of main surfaces that are rotated between about −40 degrees and +40 degrees relative to the X-axis.
19. The quartz crystal device of claim 12 , wherein the quartz crystal device is hermetically sealed in a package substrate having disposed therein an integrated circuit (IC) die electrically connected to the quartz crystal device and bonded to the package substrate.
20. A quartz crystal device configured for temperature sensing, comprising:
a quartz crystal comprising first and second elongate arms laterally extending from a base region in a horizontal lengthwise direction of the arms,
wherein each of the first and second elongate arms has formed on lower and upper sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction;
wherein adjacent ones of the groove structures on a same side of each of the arms have formed therein electrodes having portions that face each other and configured to be biased at opposite polarities.
21. The quartz crystal device of claim 20 , wherein the pair of vertically recessed groove structures on the same side of each arm are separated in a horizontal widthwise direction of the arms by a vertically protruding line structure extending in the horizontal lengthwise direction.
22. The quartz crystal device of claim 21 , wherein the portions of the electrodes that face each other are formed on opposing surfaces of the vertically protruding line structure and face each other across the vertically protruding line structure.
23. The quartz crystal device of claim 20 , wherein the quartz crystal device has a substantially linear temperature dependence of a resonance frequency, wherein the temperature dependence is such that a coefficient of a linear temperature-dependent term is about 10-50 ppm/° C.
24. The quartz crystal device of claim 20 , wherein the horizontal lengthwise direction corresponds to the X-axis of a quartz crystal from which the quartz crystal is fabricated, and wherein the quartz crystal device has surface normal directions of main surfaces that are rotated between about −40 degrees and +40 degrees relative to the X-axis.
25. The quartz crystal device of claim 20 , wherein the quartz crystal device is hermetically sealed in a package substrate having disposed therein an integrated circuit (IC) die electrically connected to the quartz crystal device and bonded to the package substrate.