Complementary field effect transistor with oblique conductive through substrate layer
A device includes: a complementary transistor including: a first transistor having a first source/drain region; and a second transistor above the first transistor in a vertical direction, and having a second source/drain region, the second transistor being offset from the first transistor in a first direction that is perpendicular to the vertical direction; a first source/drain contact electrically coupled to the first source/drain region; a second source/drain contact electrically coupled to the second source/drain region; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact, and including an oblique portion that extends from the first source/drain contact to the second source/drain contact at an offset angle from the vertical direction.
1 . A device comprising:
a complementary transistor including:
a first transistor having a first source/drain region; and
a second transistor above the first transistor in a vertical direction, and having a second source/drain region, the second transistor being offset from the first transistor in a first direction that is perpendicular to the vertical direction;
a first source/drain contact electrically coupled to the first source/drain region;
a second source/drain contact electrically coupled to the second source/drain region; and
an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact, and including an oblique portion that extends from the first source/drain contact to the second source/drain contact at an offset angle from the vertical direction.
2 . The device of claim 1 , wherein the interconnect structure further includes a vertical portion that extends through the first source/drain contact.
3 . The device of claim 1 , wherein the oblique portion is a different material than the first source/drain contact.
4 . The device of claim 3 , wherein the oblique portion is ruthenium.
5 . The device of claim 1 , further comprising a metal-to-metal interface between the second source/drain contact and the oblique portion.
6 . The device of claim 1 , wherein the offset angle is in a range of about 10 degrees to about 40 degrees.
7 . The device of claim 1 , wherein the offset angle is in a range of about 40 degrees to about 70 degrees.
8 . The device of claim 1 , wherein one of the first and second source/drain regions is N-type and the other of the first and second source/drain regions is P-type.
9 . The device of claim 1 , wherein the first source/drain contact is a backside source/drain contact and the second source/drain contact is a frontside source/drain contact.
10 . The device of claim 1 , wherein the oblique portion is cylinder shaped.
11 . A device comprising:
a first source/drain contact electrically coupled to a first source/drain region;
a second source/drain contact electrically coupled to a second source/drain region; and
an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact, the interconnect structure includes an oblique portion that extends from the first source/drain contact to the second source/drain contact at an offset angle from the vertical direction.
12 . The device of claim 11 , wherein the oblique portion has a cylindrical shape.
13 . The device of claim 11 , wherein the oblique portion has a conical shape.
14 . The device of claim 11 , wherein the oblique portion is tapered.
15 . The device of claim 11 , wherein the first source/drain contact is a backside source/drain contact and the second source/drain contact is a frontside source/drain contact.
16 . The device of claim 11 , wherein:
the first source/drain contact is made of a first material;
the second source/drain contact is made of a second material; and
the oblique portion of the interconnect structure is made of a third material different from the first material and the second material.
17 . The device of claim 16 , wherein the first material and the second material are the same.
18 . A device, comprising:
a structure of stacked layers including a first side and a second side opposite to the first side;
a first transistor within the structure of stacked layers, the first transistor including a first source/drain region;
a first source/drain contact electrically coupled to the first source/drain region;
a second transistor within the structure of stacked layers, the second transistor including a second source/drain region;
a second source/drain contact electrically coupled to the second source/drain region; and
an interconnect structure in the structure of stacked layers and electrically coupled to the first source/drain contact and the second source/drain contact, the interconnect structure includes an oblique portion that extends through the structure of stacked layers from the first source/drain contact to the second source/drain contact at an offset angle from the vertical direction, and the angle is transverse to the first side and the second side of the structure of stacked layers.
19 . The device of claim 18 , wherein the oblique portion is tapered.
20 . The device of claim 18 , wherein the oblique portion has a cylindrical shape.