Etching gas composition, substrate processing apparatus, and pattern forming method using the etching gas composition
An etching gas composition includes at least two C 3 or C 4 organic fluorine compounds and niobium fluoride, and the at least two C 3 or C 4 organic fluorine compounds are isomers.
1. An etching gas composition comprising:
at least two C 3 or C 4 organic fluorine compounds; and
niobium fluoride,
wherein the at least two C 3 or C 4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.
2. The etching gas composition of claim 1 , wherein at least two C 3 or C 4 organic fluorine compounds each have a formula of C 3 H 2 F 6 .
3. The etching gas composition of claim 1 , wherein the niobium fluoride has a formula of NbF 5 .
4. The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds each have a formula of C 4 H 2 F 6 .
5. The etching gas composition of claim 1 , further comprising an inert gas and a reactive gas,
wherein the inert gas is selected from among argon (Ar), helium (He), neon (Ne), and any mixture thereof.
6. The etching gas composition of claim 5 , wherein the reactive gas is oxygen gas (O 2 ).
7. The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds are selected from among 1,1,1,3,3,3-hexafluoropropane, 1,1,1,2,3,3-hexafluoropropane, and 1,1,2,2,3,3-hexafluoropropane.
8. The etching gas composition of claim 7 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a first organic fluorine compound and a second organic fluorine compound,
the first organic fluorine compound is 1,1,1,2,3,3-hexafluoropropane, and
the second organic fluorine compound is selected from among 1,1,1,3,3,3-hexafluoropropane and 1,1,2,2,3,3-hexafluoropropane.
9. The etching gas composition of claim 7 , wherein the at least two C 3 or C 4 organic fluorine compounds comprise a first organic fluorine compound and a second organic fluorine compound,
the first organic fluorine compound is 1,1,1,3,3,3-hexafluoropropane, and
the second organic fluorine compound is 1,1,2,2,3,3-hexafluoropropane.
10. The etching gas composition of claim 1 , wherein the at least two C 3 or C 4 organic fluorine compounds are selected from among hexafluoroisobutene, (2Z)-1,1,1,4,4,4-hexafluoro-2-butene, 2,3,3,4,4,4-hexafluoro-1-butene, (2Z)-1,1,1,2,4,4-hexafluoro-2-butene, (2Z)-1,1,2,3,4,4-hexafluoro-2-butene, 1,1,2,3,4,4-hexafluoro-2-butene, (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane, and 1,1,2,2,3,3-hexafluorocyclobutane.
11. The etching gas composition of claim 10 , wherein the at least two C 3 or C 4 organic fluorine compounds are a first organic fluorine compound and a second organic fluorine compound and the etching gas composition further comprises a third organic fluorine compound and a fourth organic fluorine compound,
the third organic fluorine compound is (2Z)-1,1,1,4,4,4-hexafluoro-2-butene, and
the fourth organic fluorine compound is selected from among hexafluoroisobutene and (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane.
12. The etching gas composition of claim 10 , wherein the at least two C 3 or C 4 organic fluorine compounds are a first organic fluorine compound and a second organic fluorine compound and the etching gas composition further comprises a third organic fluorine compound and a fourth organic fluorine compound,
the third organic fluorine compound is hexafluoroisobutene, and
the fourth organic fluorine compound is (3R, 4S)-1,1,2,2,3,4-hexafluorocyclobutane.
13. A substrate processing apparatus comprising:
a chamber having a processing space in which substrate processing is performed;
a gas supply device configured to supply an etching gas composition to the processing space; and
a substrate support device disposed in the processing space and configured to support a substrate,
wherein the etching gas composition comprises at least two C 3 or C 4 organic fluorine compounds and niobium fluoride, and
the at least two C 3 or C 4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.
14. The substrate processing apparatus of claim 13 , further comprising a shower head disposed above the substrate and having a plurality of gas supply holes.
15. A pattern forming method comprising:
forming a layer to be etched on a substrate;
forming an etching mask on the layer to be etched;
etching the layer to be etched through the etching mask by using plasma obtained from an etching gas composition; and
removing the etching mask,
wherein the etching gas composition comprises at least two C 3 or C 4 organic fluorine compounds and niobium fluoride, and
the at least two C 3 or C 4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.
16. The pattern forming method of claim 15 , wherein the etching mask is at least one selected from among a photoresist (PR), a spin-on hardmask (SOH), and an amorphous carbon layer (ACL).
17. The pattern forming method of claim 15 , wherein the layer to be etched comprises at least one of silicon nitride or silicon oxide.
18. The pattern forming method of claim 15 , wherein a plasma source for obtaining the plasma is one of an inductively coupled plasma (ICP) or a capacitively coupled plasma (CCP).