Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device
A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a seed layer on a surface of a substrate; and
forming a group V metal nitride film on the seed layer by alternately supplying a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas,
wherein the seed layer is one of a titanium nitride film or a silicon nitride film.
2. The method of claim 1 , wherein the titanium nitride film is formed on the substrate by alternately supplying a titanium-containing gas and the nitrogen-containing gas.
3. The method of claim 1 , wherein the seed layer has a thickness of 10 nm or less.
4. The method of claim 1 , wherein the raw material gas including the group V metal is a niobium fluoride, and the group V metal nitride film is a niobium nitride film.
5. The method of claim 1 , wherein the forming the seed layer and the forming the group V metal nitride film are performed within separate processing containers, respectively.
6. The method of claim 1 , wherein the forming the seed layer and the forming the group V metal nitride film are performed within a same processing container.