Chip package and method of forming the same
A chip package includes a semiconductor die laterally encapsulating by an insulating encapsulant, a first dielectric portion, conductive vias, conductive traces and a second dielectric portion. The first dielectric portion covers the semiconductor die and the encapsulant. The conductive vias penetrate through the first dielectric portion and electrically connected to the semiconductor die. The conductive traces are disposed on the first dielectric portion. The second dielectric portion is disposed on the first dielectric portion and covering the conductive traces, wherein a first minimum lateral width of a conductive trace among the conductive traces is smaller than a second minimum lateral width of a conductive via among the conductive vias. A method of forming the chip package is also provided.
1. A redistribution structure, comprising:
a first dielectric portion;
a first group of conductive features embedded in the first dielectric portion, the first group of conductive features comprising:
a first conductive feature, comprising a first via portion, a first wiring portion on the first via portion, and a first seed layer, wherein the first seed layer covers sidewalls and bottom surfaces of the first via portion and the first wiring portion;
a second conductive feature, comprising a second wiring portion and a second seed layer,
wherein the second seed layer covers sidewalls and a bottom surface of the second wiring portion;
a second dielectric portion;
a second group of conductive features disposed on the second dielectric portion, the second group of conductive features comprising:
a third conductive feature penetrating through the second dielectric portion, the third conductive feature comprising a third via portion, a third wiring portion on the third via portion, and a third seed layer, wherein the third seed layer does not cover sidewalls of the third wiring portion; and
a fourth conductive feature disposed on a top surface of the second dielectric portion, the fourth conductive feature comprising a fourth wiring portion and a fourth seed layer, wherein the fourth seed layer does not cover sidewalls of the fourth wiring portion.
2. The redistribution structure of claim 1 , wherein the second conductive feature is embedded in the at least one first dielectric portion, and the second conductive feature and the first wiring portion are disposed at a same level height.
3. The redistribution structure of claim 1 , wherein the fourth conductive feature and the third wiring portion are disposed at a same level height.
4. The redistribution structure of claim 1 , wherein the second dielectric portion is spaced apart from the third via portion and the third wiring portion by the third seed layer, and the second dielectric portion is spaced apart from the fourth wiring portion by the fourth seed layer.