IP Library Granted Patent US 12,407,955
Granted Patent B2
US 12,407,955 · App. 18/350,065 · Granted Sep 2, 2025

Photoelectric conversion apparatus and system

Inventors: Hiroyuki Muto (Kanagawa, JP); Hideo Kobayashi (Tokyo, JP)
Assignee: Canon Kabushiki Kaisha
H04N25/77
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Quick Facts
Patent No.
US 12,407,955
App. No.
18/350,065
Granted
Sep 2, 2025
Kind
B2
Abstract

A photoelectric conversion apparatus includes a plurality of pixels arranged in a matrix, and a control circuit configured to control the plurality of pixels. Each of the plurality of pixels include a photoelectric conversion unit configured to generate a signal charge, a floating diffusion unit, a transfer transistor configured to transfer the signal charge to the floating diffusion unit, and a transistor configured to be electrically connected to the floating diffusion unit. The control circuit outputs a row selection pulse configured to select the pixel arranged in a row direction, and a pixel control pulse having a rise time longer than a rise time of the row selection pulse. The pixel control pulse is entered to a gate of the transistor.

Claims (53)

1. A photoelectric conversion apparatus comprising:

a plurality of pixels arranged in a matrix; and

a control circuit configured to control the plurality of pixels,

wherein each of the plurality of pixels include a photoelectric conversion unit configured to generate a signal charge, a floating diffusion unit, a transfer transistor configured to transfer the signal charge to the floating diffusion unit, and a transistor configured to be electrically connected to the floating diffusion unit,

wherein the control circuit outputs a row selection pulse configured to select the pixel arranged in a row direction, and a pixel control pulse having a rise time longer than a rise time of the row selection pulse, and

wherein the pixel control pulse is entered to a gate of the transistor.

2. A photoelectric conversion apparatus comprising:

a plurality of pixels arranged in a matrix; and

a control circuit configured to control the plurality of pixels,

wherein the control circuit outputs a row selection pulse configured to select the pixel arranged in a row direction, and a pixel control pulse having a rise time longer than a rise time of the row selection pulse, and having a fall time longer than a fall time of the row selection pulse.

3. The photoelectric conversion apparatus according to claim 1 , wherein the transistor is a transistor configured to switch a capacitance value of the floating diffusion unit included in the pixel.

4. The photoelectric conversion apparatus according to claim 2 , wherein the pixel control pulse includes a control signal that controls a transistor configured to switch a capacitance value of a floating diffusion unit included in the pixel.

5. The photoelectric conversion apparatus according to claim 3 , further comprising a processing unit configured to correct a non-linearity of an output signal level of the pixel that occurs by rising of potential of the floating diffusion unit.

6. The photoelectric conversion apparatus according to claim 4 , further comprising a processing unit configured to correct a non-linearity of an output signal level of the pixel that occurs by rising of potential of the floating diffusion unit.

7. The photoelectric conversion apparatus according to claim 1 ,

wherein the pixel includes a plurality of transistors including the transistor,

wherein each of the plurality of transistors is a transistor configured to switch a capacitance value of the floating diffusion unit included in the pixel, and

wherein the pixel control pulse includes a plurality of control signals configured to control the plurality of transistors.

8. The photoelectric conversion apparatus according to claim 2 , wherein the pixel control pulse includes a plurality of control signals configured to control a plurality of transistors configured to switch a capacitance value of a floating diffusion unit included in the pixel.

9. The photoelectric conversion apparatus according to claim 1 , wherein the transistor is a transfer transistor configured to transfer a signal charge from a photodiode included in the pixel to the floating diffusion unit.

10. The photoelectric conversion apparatus according to claim 2 , wherein the pixel control pulse includes a signal that controls a transfer transistor configured to transfer a signal charge from a photodiode included in the pixel to a floating diffusion unit.

11. The photoelectric conversion apparatus according to claim 1 ,

wherein the pixel includes a first transistor serving as the transistor, a second transistor, a first photodiode, and a second photodiode,

wherein the first transistor is a transistor configured to transfer a signal charge from the first photodiode to the floating diffusion unit,

wherein the second transistor is a transistor configured to transfer a signal charge from the second photodiode to the floating diffusion unit, and

the pixel control pulse includes a plurality of signals configured to control the first transistor and the second transistor.

12. The photoelectric conversion apparatus according to claim 2 , wherein the pixel control pulse includes a plurality of signals configured to control a plurality of transfer transistors that are configured to transfer a signal charge from a plurality of photodiodes included in the pixel to a floating diffusion unit.

13. The photoelectric conversion apparatus according to claim 1 , wherein the transistor is a reset transistor configured to reset the floating diffusion unit included in the pixel.

14. The photoelectric conversion apparatus according to claim 2 , wherein the pixel control pulse includes a signal that controls a reset transistor configured to reset a floating diffusion unit included in the pixel.

15. The photoelectric conversion apparatus according to claim 1 , wherein the control circuit includes a current source circuit configured to increase a rise time of the pixel control pulse than a rise time of the row selection pulse in an output unit of the pixel control pulse.

16. The photoelectric conversion apparatus according to claim 2 , wherein the control circuit includes a current source circuit configured to increase a rise time of the pixel control pulse than a rise time of the row selection pulse in an output unit of the pixel control pulse.

17. The photoelectric conversion apparatus according to claim 1 , wherein the control circuit includes at least one of a current limiting resistor and a transistor configured to increase a rise time of the pixel control pulse than a rise time of the row selection pulse in an output unit of the pixel control pulse.

18. The photoelectric conversion apparatus according to claim 2 , wherein the control circuit includes at least one of a current limiting resistor and a transistor configured to increase a rise time of the pixel control pulse than a rise time of the row selection pulse in an output unit of the pixel control pulse.

19. The photoelectric conversion apparatus according to claim 2 , wherein the control circuit includes a current source circuit configured to increase a fall time of the pixel control pulse than a fall time of the row selection pulse in an output unit of the pixel control pulse.

20. The photoelectric conversion apparatus according to claim 2 , wherein the control circuit includes at least one of a current limiting resistor and a transistor configured to increase a fall time of the pixel control pulse than a fall of the row selection pulse in an output unit of the pixel control pulse.

21. The photoelectric conversion apparatus according to claim 1 , wherein a gradient of rise of the pixel control pulse is smaller than 30 V/μsec.

22. The photoelectric conversion apparatus according to claim 2 , wherein a gradient of rise of the pixel control pulse is smaller than 30 V/μsec.

23. The photoelectric conversion apparatus according to claim 2 , wherein a gradient of fall of the pixel control pulse is smaller than 30 V/μsec.

24. A system comprising:

the photoelectric conversion apparatus according to claim 1 ; and

a processing apparatus configured to process an image data output from the photoelectric conversion apparatus.

25. A system comprising:

the photoelectric conversion apparatus according to claim 2 ; and

a processing apparatus configured to process an image data output from the photoelectric conversion apparatus.

26. A photoelectric conversion apparatus comprising:

a plurality of pixels arranged in a matrix; and

a control circuit configured to control the plurality of pixels,

wherein each of the plurality of pixels include a photoelectric conversion unit configured to generate a signal charge, a floating diffusion unit, a transfer transistor configured to transfer the signal charge to the floating diffusion unit, and a transistor configured to be electrically connected to the floating diffusion unit,

wherein the control circuit outputs a row selection pulse configured to select the pixel arranged in a row direction, and a pixel control pulse having a transition time from a signal level to set the transistor as OFF state, to a signal level to set the transistor as ON state, longer than a transition time of the row selection pulse from a signal level to set the pixel as unselected state to a signal level to set the pixel as selected state, and

wherein the pixel control pulse is entered to a gate of the transistor.

27. A system comprising:

the photoelectric conversion apparatus according to claim 26 ; and

a processing apparatus configured to process an image data output from the photoelectric conversion apparatus.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2023
From: MUTO, HIROYUKI; KOBAYASHI, HIDEO
To: CANON KABUSHIKI KAISHA
Reel/Frame 064396/0104 →
Priority Claims (1)
JP 2022-113654 · Jul 15, 2022 · national
Continuity (1)
Related Publication 20240022838A1 · Jan 18, 2024
References Cited (63)
US 7468750B2 · Mabuchi et al. · 2008 [cited by applicant]
US 7688371B2 · Koizumi et al. · 2010 [cited by applicant]
US 7990440B2 · Kobayashi et al. · 2011 [cited by applicant]
US 7995127B2 · Koizumi et al. · 2011 [cited by applicant]
US 8431879B2 · Mabuchi et al. · 2013 [cited by applicant]
US 8710558B2 · Inoue et al. · 2014 [cited by applicant]
US 8884391B2 · Fudaba et al. · 2014 [cited by applicant]
US 9088743B2 · Koizumi et al. · 2015 [cited by applicant]
US 9264641B2 · Kobayashi · 2016 [cited by applicant]
US 9305954B2 · Kato et al. · 2016 [cited by applicant]
US 9357122B2 · Kususaki et al. · 2016 [cited by applicant]
US 9407847B2 · Maehashi et al. · 2016 [cited by applicant]
US 9438828B2 · Itano et al. · 2016 [cited by applicant]
US 9509931B2 · Kobayashi et al. · 2016 [cited by applicant]
US 9521343B2 · Mabuchi et al. · 2016 [cited by applicant]
US 9602752B2 · Kobayashi et al. · 2017 [cited by applicant]
US 9860471B2 · Mabuchi et al. · 2018 [cited by applicant]
US 10015430B2 · Kobayashi et al. · 2018 [cited by applicant]
US 10609316B2 · Kobayashi · 2020 [cited by applicant]
US 11268851B2 · Kobayashi et al. · 2022 [cited by applicant]
US 11431929B2 · Kobayashi et al. · 2022 [cited by applicant]
US 11463644B2 · Soda et al. · 2022 [cited by applicant]
US 11470275B2 · Kobayashi et al. · 2022 [cited by applicant]
US 11496704B2 · Sato et al. · 2022 [cited by applicant]
US 11616925B2 · Kobayashi et al. · 2023 [cited by applicant]
US 11653114B2 · Nakazawa et al. · 2023 [cited by applicant]
US 11688755B2 · Kobayashi · 2023 [cited by applicant]
US 11736813B2 · Kobayashi · 2023 [cited by applicant]
US 11961856B2 · Kwag · 2024 [cited by examiner]
US 20020054390A1 · Koizumi et al. · 2002 [cited by applicant]
US 20050001915A1 · Mabuchi et al. · 2005 [cited by applicant]
US 20050052554A1 · Sakurai et al. · 2005 [cited by applicant]
US 20070145239A1 · Mheen et al. · 2007 [cited by applicant]
US 20160373669A1 · Ando et al. · 2016 [cited by applicant]
US 20210136305A1 · Oguro et al. · 2021 [cited by applicant]
US 20210360180A1 · Saito et al. · 2021 [cited by applicant]
US 20220053151A1 · Hwang · 2022 [cited by examiner]
US 20220247964A1 · Kobayashi · 2022 [cited by applicant]
US 20220303484A1 · Kobayashi · 2022 [cited by applicant]
US 20220303485A1 · Kobayashi et al. · 2022 [cited by applicant]
US 20220303486A1 · Kobayashi · 2022 [cited by applicant]
US 20220321812A1 · Kobayashi et al. · 2022 [cited by applicant]
US 20230041974A1 · Kobayashi · 2023 [cited by applicant]
US 20230069364A1 · Hayashi · 2023 [cited by examiner]
US 20230070568A1 · Kobayashi et al. · 2023 [cited by applicant]
US 20230072715A1 · Kobayashi · 2023 [cited by applicant]
US 20230117988A1 · Kobayashi et al. · 2023 [cited by applicant]
US 20230154963A1 · Kobayashi et al. · 2023 [cited by applicant]
US 20230171514A1 · Kobayashi · 2023 [cited by applicant]
US 20230178580A1 · Yamazaki et al. · 2023 [cited by applicant]
US 20230179890A1 · Kobayashi et al. · 2023 [cited by applicant]
US 20230216459A1 · Kobayashi et al. · 2023 [cited by applicant]
US 20230247332A1 · Kobayashi et al. · 2023 [cited by applicant]
US 20230282654A1 · Kobayashi · 2023 [cited by applicant]
US 20240006451A1 · Ichino · 2024 [cited by examiner]
US 20240128285A1 · Ikedo · 2024 [cited by examiner]
US 20240406591A1 · Lim · 2024 [cited by examiner]
JP 2000165754A · 2000 [cited by applicant]
JP 2002077730A · 2002 [cited by applicant]
JP 2004320592A · 2004 [cited by applicant]
JP 2009518850A · 2009 [cited by applicant]
JP 2017202328A · 2017 [cited by applicant]
JP 2021072522A · 2021 [cited by applicant]