Microelectronic devices with pillars or openings extending through a tiered stack
Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.
1. A microelectronic device, comprising:
a tiered stack above a base region, the tiered stack comprising a vertically repeated group of material regions comprising insulative materials and conductive materials; and
a pillar extending through the tiered stack and into the base region, the pillar comprising at least one channel material,
a width of the pillar narrowing through multiple groups of the vertically repeated groups of materials,
the width of the pillar broadening adjacent a lowest surface of the tiered stack, the broadening being within an elevation of a lowest of the insulative materials of the vertically repeated group of material regions of the tiered stack, to define a shoulder portion of the pillar adjacent an upper surface of the base region.
2. The microelectronic device of claim 1 , wherein the pillar comprises cell materials along an outer sidewall of the pillar.
3. The microelectronic device of claim 2 , wherein the cell materials extend partially under the pillar.
4. The microelectronic device of claim 2 , wherein the at least one channel material extends through the cell materials proximate a base of the pillar.
5. The microelectronic device of claim 1 , wherein the pillar comprises a tunnel insulator along an outer sidewall of the at least one channel material.
6. The microelectronic device of claim 1 , wherein the pillar further comprises an additional material horizontally surrounded by the at least one channel material, the additional material occupying a central portion of the pillar along a longitudinal axis of the pillar.
7. The microelectronic device of claim 1 , wherein the pillar defines a void within the at least one channel material, the void being along a longitudinal axis of the pillar.
8. The microelectronic device of claim 1 , wherein the base region comprises at least one dopant below the pillar.
9. The microelectronic device of claim 1 , wherein the width of the pillar also narrows from the lowest surface of the tiered stack to a base of the pillar.
10. The microelectronic device of claim 1 , wherein the shoulder portion of the pillar is substantially curved through a height of the shoulder portion.
11. The microelectronic device of claim 1 , wherein the tiered stack is arranged in decks, each of the decks comprising a set of the vertically repeated group of material regions, the decks comprising:
a first deck above the base region; and
a second deck above the first deck.
12. The microelectronic device of claim 11 , wherein:
the multiple groups of the vertically repeated groups of materials, through which the width of the pillar narrows, are in the first deck; and
the width of the pillar also narrows through additional multiple groups of the vertically repeated groups of materials of the second deck,
the width of the pillar also broadens adjacent a lowest surface of the second deck to define an additional shoulder portion of the pillar.
13. The microelectronic device of claim 11 , wherein the width of the pillar narrows through a majority of the first deck and through a majority of the second deck of the tiered stack.
14. The microelectronic device of claim 1 , wherein the width of the pillar also narrows from the lowest surface of the tiered stack to a source region below the pillar.
15. The microelectronic device of claim 1 , wherein the insulative materials and the conductive materials of the tiered stack are vertically interleaved with one another to define the tiered stack, the vertically repeated group of material regions individually comprising a pair of the material regions.
16. The microelectronic device of claim 1 , wherein the width of the pillar transitions from the narrowing to the broadening at a lowest material region of the tiered stack.
17. A microelectronic device, comprising:
a tiered stack above a base region, the tiered stack comprising a vertically repeated group of material regions comprising insulative materials and conductive materials, the tiered stack being arranged in decks; and
a pillar extending through the decks of the tiered stack and into the base region, the pillar comprising at least one channel material,
in each of multiple of the decks, a width of the pillar narrowing through multiple groups of the vertically repeated groups of materials,
the width of the pillar broadening adjacent a lowest surface of each of the decks, the broadening being within an elevation of at least a lowest of the insulative materials of the vertically repeated group of material regions of each of the decks.
18. A microelectronic device structure, comprising:
a tiered stack above a base material, the tiered stack comprising a vertically repeated group of material regions comprising insulative materials and conductive materials; and
at least one high aspect ratio opening extending through the tiered stack and into the base material to a source region,
a width of the at least one high aspect ratio opening narrowing through multiple groups of the vertically repeated groups of materials,
the width of the at least one high aspect ratio opening broadening through at least a lowest of the insulative materials of the material regions of the tiered stack, the lowest of the insulative materials being directly adjacent the base material.
19. The microelectronic device structure of claim 18 , further comprising a liner along a sidewall of the at least one high aspect ratio opening, the liner extending along the sidewall through a portion of the at least one high aspect ratio opening in which the width of the at least one high aspect ratio opening narrows, and the liner extending to a free end of the liner disposed below the lowest of the material regions of the tiered stack.
20. The microelectronic device structure of claim 19 , wherein the at least one high aspect ratio opening defines a gap between the free end of the liner and a sidewall of the base material.