Semiconductor integrated circuit device and semiconductor system including the same
A semiconductor apparatus includes a data input and output (input/output) circuit configured to operate by receiving a first voltage, a core circuit configured operate by receiving a second voltage, and a control circuit configured to output a power control signal for activating the data input/output circuit when the first voltage is higher than a first set voltage and the second voltage is higher a second set voltage.
1. A semiconductor system comprising:
a power voltage controller including one or more first type transistors, configured to generate a power control signal by detecting levels of an input voltage; and
a level shifter including one or more second type transistors, configured to receive the power control signal as a power voltage,
wherein at least one internal voltage of the one or more second type transistors is lower than an internal voltage of at least one of the one or more first type transistors.
2. The semiconductor system according to claim 1 ,
wherein each of the first type transistors and the second type transistors includes a gate, a source and a drain, and
wherein at least one of the internal voltage of the first and the internal voltage of the second type transistor includes at least one of a voltage between the gate and the drain, a voltage between the gate and the source, or a voltage between the source and the drain.
3. The semiconductor system according to claim 1 , wherein the level shifter includes at least one of the second type transistors configured to lower the power voltage.
4. The semiconductor system according to claim 1 , wherein each of the first type transistors includes a gate insulating film with a first thickness, and each of the second type transistors includes a gate insulating film with a second thickness thinner than the first thickness.
5. The semiconductor system according to claim 1 ,
wherein the input voltage includes a first input voltage and a second input voltage, and
wherein the power voltage controller includes:
a first detection circuit configured to detect the level of the first input voltage and generate a first detection signal based on the detected level of the first input voltage;
a second detection circuit configured to detect the level of the second input voltage and generate a second detection signal based on the detected level of the second input voltage and the first detection signal; and
a storage and output circuit configured to generate the power control signal and a current control signal based on the second detection signal.
6. The semiconductor system according to claim 5 , wherein the power control signal is generated by latching the second detection signal and the current control signal is generated by delaying the second detection signal.
7. The semiconductor system according to claim 5 , wherein the second detection signal is disabled when the current control signal is enabled.
8. The semiconductor system according to claim 1 , wherein the level shifter comprises:
a current mirror coupled to a power voltage terminal providing a second voltage, and configured to receive an input signal in response to the first voltage and generate an output signal by mirroring a current corresponding to the second voltage based on a level of the input signal; and
an adjusting circuit coupled to the power voltage terminal providing the second voltage and configured to adjust the voltage level of an output terminal of the current mirror.
9. The semiconductor system according to claim 5 , wherein a power consumption of the power voltage controller is lowered by operating the second detection circuit, and a transistor of the level shifter is operated under a maximum allowable voltage of the transistor as the level shifter is operated based on the power control signal.
10. A semiconductor system, comprising:
a control circuit configured generate a power control signal by detecting a level of a first power voltage and a level of a second power voltage, the control circuit including at least one first MOS transistor; and
a level shifter configured to receive the power control signal as a power voltage, the level shifter including at least one second MOS transistor,
wherein the first MOS transistor includes a first gate oxide and the second MOS transistor includes a second gate oxide thinner than the first gate oxide.
11. The semiconductor system according to claim 10 , wherein the control circuit includes:
a first detection circuit configured to detect the level of the first power voltage and generate a first detection signal based on the detected level of the first power voltage;
a second detection circuit configured to detect the level of the second power voltage and generate a second detection signal based on the detected level of the second power voltage and the first detection signal; and
a storage and output circuit configured to generate the power control signal and a current control signal based on the second detection signal.
12. The semiconductor system according to claim 11 , wherein the second detection signal is disabled when the current control signal is enabled.
13. The semiconductor system according to claim 10 , wherein the level shifter comprises:
a current mirror configured to receive an input signal in response to the first power voltage and generate an output signal by mirroring a current corresponding to the second power voltage based on a level of the input signal; and
an adjusting circuit coupled to a terminal providing the power control signal and configured to adjust a voltage level of an output terminal of the current mirror.
14. The semiconductor system according to claim 13 , wherein the adjusting circuit is connected with the current mirror in parallel.
15. The semiconductor system according to claim 13 , wherein a level of the power control signal is substantially the same as a level of the second power voltage.
16. The semiconductor system according to claim 10 , wherein the first power voltage is higher than the second power voltage.
17. The semiconductor system according to claim 10 , wherein a power consumption of the control circuit is lowered by operating of a second detection circuit.
18. The semiconductor system according to claim 10 , wherein the control circuit reduces current consumption by operating of a second detection circuit.
19. The semiconductor system according to claim 10 ,
wherein an area of the second MOS transistor is smaller than an area of the first MOS transistor, and a leakage current of the level shifter is lowered by the adjusting circuit.
20. The semiconductor system according to claim 10 , wherein at least one transistor of the level shifter is operated under a maximum allowable voltage of the transistor as the level shifter is operated based on the power control signal.