IP Library › Granted Patent US 12,549,206
Granted Patent B2
US 12,549,206 · App. 18/356,308 · Granted Feb 10, 2026

RF chip to improve transmit channel flatness

Inventors: Joonggeun Lee (Suwon-si, KR); Daechul Jeong (Suwon-si, KR); Jeongyeol Bae (Suwon-si, KR); Jongsoo Lee (Suwon-si, KR); Sangmin Yoo (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H04B1/0458H03F3/195H03F3/245H04B2001/0416
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Quick Facts
Patent No.
US 12,549,206
App. No.
18/356,308
Granted
Feb 10, 2026
Kind
B2
Abstract

A radio-frequency (RF) chip includes a mixer configured to mix a local oscillation signal with a baseband signal to output an RF signal, an amplification stage configured to amplify the RF signal through a plurality of unit amplifiers operating in response to a first control signal, and a compensation capacitor bank provided between the mixer and the amplification stage. The compensation capacitor bank is configured to adjust a capacitance of the compensation capacitor bank based on a second control signal, the second control signal being complementary to the first control signal.

Claims (55)

1 . A radio-frequency (RF) chip comprising:

a mixer configured to mix a local oscillation signal with a baseband signal to output an RF signal;

an amplification stage configured to amplify the RF signal through a plurality of unit amplifiers operating in response to a first control signal; and

a compensation capacitor bank provided between the mixer and the amplification stage, the compensation capacitor bank being configured to adjust a capacitance of the compensation capacitor bank based on a second control signal, the second control signal being complementary to the first control signal.

2 . The RF chip of claim 1 , wherein

each of the plurality of unit amplifiers are configured to be turned off or turned on by the first control signal.

3 . The RF chip of claim 2 , wherein

based on a number of turned-off unit amplifiers increasing, among the plurality of unit amplifiers, the capacitance increases.

4 . The RF chip of claim 1 , wherein

the compensation capacitor bank comprises one or more sub-capacitor banks, each comprising a plurality of capacitor adjustment circuits.

5 . The RF chip of claim 4 , wherein

each of the plurality of capacitor adjustment circuits comprises:

a switch configured to be turned on or turned off based on the second control signal; and

one or more unit capacitors connected to the switch.

6 . The RF chip of claim 4 , wherein

a number of the plurality of capacitor adjustment circuits is same as the plurality of unit amplifiers, where n is a positive integer.

7 . The RF chip of claim 6 , wherein

based on m unit amplifiers being turned on, m being less than or equal to n, n-m capacitor adjustment circuits of the plurality of capacitor adjustment circuits are configured to be turned on based on the second control signal.

8 . The RF chip of claim 4 , further comprising:

a control circuit configured to control the compensation capacitor bank based on the second control signal and a third control signal for independently operating the one or more sub-capacitor banks.

9 . The RF chip of claim 8 , wherein

the one or more sub-capacitor banks are each configured to be turned on or turned off based on the third control signal, and

the plurality of capacitor adjustment circuits are each configured to be turned on or turned off based on the second control signal.

10 . The RF chip of claim 1 , wherein

the compensation capacitor bank is configured to adjust the capacitance to compensate for input impedance of the amplification stage, the input impedance varying based on the first control signal.

11 . The RF chip of claim 1 , wherein

based on a number of the plurality of unit amplifiers being n, each of the first control signal and the second control signal has a magnitude of n bits.

12 . The RF chip of claim 1 , further comprising:

a matching network between the mixer and the compensation capacitor bank.

13 . An operating method comprising:

outputting a radio-frequency (RF) signal by mixing a baseband signal with a local oscillation signal;

amplifying the RF signal through a plurality of unit amplifiers operating in response to a first control signal; and

adjusting capacitance of a compensation capacitor bank, provided at an input terminal of the plurality of unit amplifiers, based on a second control signal, the second control signal complementary to the first control signal.

14 . The operating method of claim 13 , further comprising:

applying a third control signal to independently operate one or more sub-capacitor banks included in the compensation capacitor bank.

15 . The operating method of claim 13 , wherein

based on a number of the plurality of unit amplifiers being n, each of the first control signal and the second control signal has a magnitude of n bits.

16 . An electronic device comprising:

a processor;

a radio-frequency (RF) chip configured to receive a baseband signal from the processor and to output an RF signal from the baseband signal;

a front-end module (FEM) configured to amplify the RF signal; and

an antenna configured to transmit the RF signal,

the RF chip comprising,

a mixer configured to mix a local oscillation signal with the baseband signal to output the RF signal;

an amplification stage configured to amplify the RF signal through a plurality of unit amplifiers operating in response to a first control signal; and

a compensation capacitor bank provided between the mixer and the amplification stage, the compensation capacitor bank configured to adjust a capacitance of the compensation capacitor bank based on a second control signal, the second control signal complementary to the first control signal.

17 . The electronic device of claim 16 , wherein

the compensation capacitor bank comprises one or more sub-capacitor banks, each comprising a plurality of capacitor adjustment circuits, and

the plurality of capacitor adjustment circuits are provided as many as the plurality of unit amplifiers.

18 . The electronic device of claim 17 , wherein

based on m unit amplifiers being turned on, m being less than or equal to n, n being a number of the plurality of unit amplifiers, n-m capacitor adjustment circuits of the plurality of capacitor adjustment circuits are configured to be turned on based on the second control signal.

19 . The electronic device of claim 17 , further comprising:

the RF chip further comprises a control circuit configured to control the compensation capacitor bank based on the second control signal and a third control signal for independently operating the one or more sub-capacitor banks.

20 . The electronic device of claim 16 , wherein

the compensation capacitor bank is configured to adjust the capacitance to compensate for input impedance of the amplification stage, the input impedance varying depending on the first control signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2023
From: LEE, JOONGGEUN; JEONG, DAECHUL; BAE, JEONGYEOL; LEE, JONGSOO; YOO, SANGMIN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 064374/0337 →
Priority Claims (2)
KR 10-2022-0128659 · Oct 7, 2022 · national
KR 10-2022-0180454 · Dec 21, 2022 · national
Continuity (1)
Related Publication 20240120957A1 · Apr 11, 2024
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