Patterning material including silicon-containing layer and method for semiconductor device fabrication
In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.
1. A method for lithography patterning, comprising:
providing a substrate;
forming a target layer over the substrate;
forming a patterning layer over the target layer, wherein the forming the patterning layer, includes:
using atomic layer deposition (ALD) process to deposit a first layer having an organic composition;
continuing the ALD process to deposit a second layer including over 50 atomic percent of silicon, the second layer deposited directly on the first layer, and
during the ALD process, delivering precursors to the substrate to form a continuous variation in a carbon (C) to silicon (Si) ratio in the first layer and the second layer; and
depositing a patterning layer on the second layer.
2. The method of claim 1 , wherein the target layer includes an interlayer dielectric (ILD) layer formed over the substrate.
3. The method of claim 2 , wherein the patterning layer defines a metallization layer to be formed in the ILD layer; and
recessing an upper surface of the second layer to form a curvilinear upper surface extending between features of the patterning layer.
4. The method of claim 3 , further comprising: trimming a width of the second layer after the recessing the upper surface of the second layer to from a curvilinear upper surface.
5. The method of claim 1 , further comprising:
using the deposited patterning layer to define a metal interconnect line pattern in the target layer.
6. The method of claim 1 , wherein the depositing the second layer includes forming an amorphous silicon (a-Si) layer.
7. The method of claim 6 , wherein the depositing the first layer includes depositing amorphous carbon.
8. The method of claim 1 , further comprising: depositing an adhesion layer between the second layer and the patterning layer.
9. A method for lithography patterning, comprising:
depositing an organic bottom layer over a masking layer disposed over a target layer;
forming a silicon-containing layer over the organic bottom layer using a deposition process providing of precursors delivered toward a surface of the organic bottom layer and chemically modifying the precursors to obtain the silicon-containing layer on the surface, wherein the silicon-containing layer has at least 50% silicon;
forming a patterned resist layer over the silicon-containing layer, the patterned resist layer including a first resist feature;
performing a first etching process to decrease a height of the first resist feature and etch an upper surface of the silicon-containing layer to form a curvilinear surface;
after performing the first etching process, performing a second etching process of the silicon-containing layer to form a first masking feature of the silicon-containing layer having tapered sidewalls and a second masking feature of the silicon-containing layer having tapered sidewalls, wherein an opening extends between the tapered sidewalls of the first and second masking features;
after the second etching process, performing a third etching process of the organic bottom layer under the opening of the second etching process to reduce a height of the silicon-containing layer; and
forming interconnect features according to a pattern defined in the organic bottom layer.
10. The method of claim 9 , further comprising: reducing a width of the patterned bottom organic layer prior to forming interconnect features.
11. The method of claim 9 , wherein the first etching process includes introducing oxygen atoms.
12. The method of claim 11 , wherein the second etching process includes introducing oxygen atoms in a dry etching process.
13. The method of claim 9 , wherein the patterned resist layer is formed directly on the silicon-containing layer.
14. A method for lithography patterning, comprising:
depositing a layer over a substrate;
forming a plurality of features extending from the layer;
forming a patterning layer over the layer and the plurality of features, wherein the forming the patterning layer, includes:
using atomic layer deposition (ALD) process to deposit a first layer having an organic composition interfacing a sidewall of a first feature of the plurality of features;
continuing the ALD process to deposit a second layer including over 50 atomic percent of silicon, wherein the depositing the first layer and the depositing the second layer are performed in-situ, and during the ALD process, delivering precursors to the substrate to form a continuous variation in a carbon (C) to silicon (Si) ratio in the first layer and the second layer; and
depositing a photosensitive layer over the second layer.
15. The method of claim 14 , wherein the plurality of features are mandrels.
16. The method of claim 15 , wherein a height of the first layer is about 1.2 to 4 times a height of the plurality of features.
17. The method of claim 14 , wherein forming the plurality of features includes forming features comprising silicon.
18. The method of claim 14 , wherein the depositing the first layer and the depositing the second layer is performed at room temperature.
19. The method of claim 14 , further comprising:
etching the second layer, wherein after the etching a first thickness of the second layer remains and a second thickness of the first layer remains, wherein a ratio of the first thickness to the second thickness is between 2:1 and 10:1.
20. The method of claim 14 wherein the forming the plurality of features includes forming a first feature and a second feature with a gap extending between the first feature and the second feature, wherein the first layer completely fills the gap.