Semiconductor memory structure
A method includes receiving a workpiece. The workpiece includes a first dummy gate, a second dummy gate adjacent the first dummy gate, a first gate spacer disposed along sidewalls of the first dummy gate, and a second gate spacer disposed along sidewalls of the second dummy gate. The method further includes removing the first dummy gate and the second dummy gate to form a first gate trench and a second gate trench, respectively, enlarging the first gate trench and the second gate trench, forming a first metal gate structure in the enlarged first gate trench, and forming a second metal gate structure in the enlarged second gate trench. The enlarged second gate trench is wider than the enlarged first gate trench.
1. A method, comprising:
receiving a workpiece including:
a first dummy gate,
a second dummy gate adjacent the first dummy gate,
a first gate spacer disposed along sidewalls of the first dummy gate, and
a second gate spacer disposed along sidewalls of the second dummy gate,
removing the first dummy gate and the second dummy gate to form a first gate trench and a second gate trench, respectively;
enlarging the first gate trench and the second gate trench, wherein the enlarged second gate trench is wider than the enlarged first gate trench;
forming a first metal gate structure in the enlarged first gate trench; and
forming a second metal gate structure in the enlarged second gate trench.
2. The method of claim 1 , wherein the enlarging of the first gate trench and the second gate trench includes removing a first portion of the first gate spacer and a second portion of the second gate spacer, the second portion being greater than the first portion.
3. The method of claim 1 , wherein the enlarging of the first gate trench and the second gate trench includes:
forming a mask element over the first gate trench and the first gate spacer,
recessing the second gate spacer by a first amount,
removing the mask element, and
recessing the first gate spacer and the second gate spacer each by a second amount.
4. The method of claim 1 , wherein the enlarging of the first gate trench and the second gate trench includes:
forming a mask element over the workpiece, wherein the mask element exposes top surfaces of the first gate trench, the second gate trench, a first portion of the first gate spacer, and a second portion of the second gate spacer, and
recessing the first portion of the first gate spacer and the second portion of the second gate spacer.
5. The method of claim 1 , wherein the workpiece further includes a third gate spacer disposed along sidewalls of the second gate spacer, and
wherein the enlarging of the first gate trench and the second gate trench includes recessing a portion of the first gate spacer and an entirety of the second gate spacer.
6. The method of claim 5 , wherein the enlarging of the first gate trench and the second gate trench further includes:
forming a mask element over the workpiece, wherein the mask element exposes top surfaces of the portion of the first gate spacer, the second gate spacer, and a portion of the third gate spacer.
7. The method of claim 1 , further comprising:
forming a first metal line electrically connected to the first metal gate structure; and
forming a second metal line electrically connected to the second metal gate structure.
8. A method, comprising:
receiving a workpiece including:
an active region disposed over a substrate,
a first dummy gate and a second dummy gate disposed over the active region,
a first gate spacer disposed on sidewall surfaces of the first dummy gate, and
a second gate spacer disposed on sidewall surfaces of the second dummy gate,
removing the first dummy gate to form a first gate trench;
removing the second dummy gate to form a second gate trench;
laterally recessing the first gate spacer from the first gate trench by a first distance;
laterally recessing the second gate spacer from the second gate trench by a second distance, the first distance being less than the second distance;
forming a first metal gate structure in the first gate trench; and
forming a second metal gate structure in the second gate trench.
9. The method of claim 8 , further comprising:
forming a mask element over the workpiece, wherein the mask element has a first opening exposing a top surface of the first gate spacer and a second opening exposing a top surface of the second gate spacer, wherein the second opening is wider than the first opening.
10. The method of claim 9 , wherein an edge of the first opening is directly above the first gate spacer, and an edge of the second opening is directly above the second gate spacer.
11. The method of claim 9 , wherein the workpiece further includes a third gate spacer disposed on sidewalls of the second gate spacer and having a different material from the second gate spacer,
wherein an edge of the first opening is directly above the first gate spacer, and
wherein an edge of the second opening is directly above the third gate spacer.
12. The method of claim 8 , wherein the active region includes a source/drain feature adjacent to the second dummy gate, and wherein the method further comprises:
forming a first metal line electrically connected to the first metal gate structure,
forming a second metal line electrically connected to the second metal gate structure, and
forming a bit line electrically connected to the source/drain feature.
13. A method, comprising:
receiving a workpiece including:
a first gate structure interposing between a first source/drain feature and a second source/drain feature,
a second gate structure interposing between the second source/drain feature and a third source/drain feature,
wherein the first gate structure includes a first dummy gate and a first gate spacer on sidewall surfaces of the first dummy gate, and the second gate structure includes a second dummy gate and a second gate spacer on sidewall surfaces of the second dummy gate,
removing the first and the second dummy gates to form a first gate trench and a second gate trench, respectively;
recessing the first gate spacer by a first amount along a first direction and the second gate spacer by a second amount along the first direction, the first amount being less than the second amount;
forming a gate dielectric layer in the first gate trench and in the second gate trench;
forming a first gate electrode in the first gate trench; and
forming a second gate electrode in the second gate trench.
14. The method of claim 13 , further comprising:
forming a first metal line electrically connected to the first gate structure;
forming a second metal line electrically connected to the second gate structure; and
forming a bit line electrically connected to the third source/drain feature.
15. The method of claim 13 , wherein the recessing includes:
forming a mask element over the first gate structure;
after forming the mask element, recessing the second gate spacer by a third amount along the first direction;
after recessing the second gate spacer by the third amount, removing the mask element; and
after removing the mask element, recessing the first gate spacer and the second gate spacer each by the first amount,
wherein a sum of the first amount and the third amount equals the second amount.
16. The method of claim 15 , wherein a ratio of the third amount to the first amount is about 2:1 to about 4:1.
17. The method of claim 13 , wherein the recessing includes adjusting a number of etching cycles and a time duration for each of the etching cycles to tune the first amount and the second amount.
18. The method of claim 13 , further comprising forming a mask element over the workpiece, the mask element having a first opening of a first dimension along the first direction over the first gate structure and a second opening of a second dimension along the first direction over the second gate structure,
wherein the recessing includes recessing through openings of the mask element,
wherein the first dimension is less than the second dimension, and
wherein the first dimension determines the first amount, and the second dimension determines the second amount.
19. The method of claim 18 , wherein a difference between the first dimension and the second dimension is about 0.5 nm to about 30 nm.
20. The method of claim 13 , further comprising:
forming a first metal line electrically connected to the first gate structure, a second metal line electrically connected to the second gate structure; and
forming a third metal line electrically connected to the third source/drain feature.