Actively controlled gas inject for process temperature control
A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.
1 . A process chamber flow apparatus for use in semiconductor processing comprising:
an inject assembly comprising:
an inject body;
a first gas inlet configured to flow a first gas through the inject body;
a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet; and
an inductive heater coupled to the inject assembly, the inductive heater configured to heat a gas, the inductive heater comprising:
a heater housing;
a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end;
an inductive coil disposed around the graphite rod; and
a second gas inlet configured to flow a second gas between the heater housing and the graphite rod, the second gas inlet disposed at the distal end and fluidly connected to the plurality of flow channels of the inject assembly.
2 . The apparatus of claim 1 , wherein the inject body comprises a graphite material.
3 . The apparatus of claim 1 , wherein the inductive coil is coupled to a radio frequency (RF) power source.
4 . The apparatus of claim 3 , wherein the RF power source is configured to heat the graphite rod up to about 1200 degrees Celsius.
5 . The apparatus of claim 1 , wherein the graphite rod is coated with silicon carbide (SiC).
6 . The apparatus of claim 1 , wherein the heater housing includes cooling channels configured to flow heat transfer fluid therethrough.
7 . The apparatus of claim 1 , wherein the inject assembly further comprises an inject cap, the inject cap configured to support a transmissive window and a sensor.
8 . The apparatus of claim 7 , wherein the sensor is a pyrometer configured to measure a temperature of the graphite rod at the proximate end.
9 . The apparatus of claim 7 , further comprising a controller coupled to the sensor, the controller configured to adjust a radio frequency (RF) power source coupled to the inductive coil.
10 . The apparatus of claim 1 , wherein the inject assembly further comprises at least two plurality of flow channels stacked in a direction perpendicular to a direction of flow through the channels.
11 . A process chamber flow apparatus for use in semiconductor processing comprising:
an inject assembly comprising:
an inject body;
a first gas inlet configured to flow a first gas through the inject body;
a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet; and
an inject casing, the inject casing surrounding the inject assembly;
an inductive heater coupled to the inject assembly, the inductive heater configured to heat a gas, the inductive heater comprising:
a heater housing;
a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end;
an inductive coil disposed around the graphite rod; and
a second gas inlet configured to flow a second gas between the heater housing and the graphite rod, the second gas inlet disposed at the distal end and fluidly connected to the plurality of flow channels of the inject assembly.
12 . The apparatus of claim 11 , wherein the inject casing comprises a flange configured to secure the inject assembly to a process chamber component.
13 . The apparatus of claim 12 , wherein the inject casing comprising a quartz material.
14 . The apparatus of claim 11 , wherein the inductive coil is coupled to a radio frequency (RF) power source configured to heat the graphite rod up to about 1200 degrees Celsius.
15 . The apparatus of claim 11 , wherein the heater housing includes cooling channels configured to flow heat transfer fluid therethrough.
16 . The apparatus of claim 11 , wherein the inject assembly further comprises an inject cap, the inject cap configured to support a transmissive window and a sensor.
17 . The apparatus of claim 16 , wherein the sensor is a pyrometer configured to measure a temperature of the graphite rod at the proximate end.
18 . The apparatus of claim 16 , further comprising a controller coupled to the sensor, the controller configured to adjust a radio frequency (RF) power source coupled to the inductive coil.
19 . The apparatus of claim 11 , wherein the inject assembly further comprises at least two plurality of flow channels stacked in a direction perpendicular to a direction of flow through the channels.
20 . A process chamber system comprising:
a process chamber having a chamber volume therein;
a substrate support;
a pre-heat ring disposed in the chamber volume, the substrate support surrounding the pre-heat ring;
an inject assembly comprising:
an inject body;
a first gas inlet configured to flow a first gas through the inject body;
a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet; and
an inductive heater coupled to the inject assembly, the inductive heater configured to heat a gas, the inductive heater comprising:
a heater housing;
a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end;
an inductive coil disposed around the graphite rod; and
a second gas inlet configured to flow a second gas between the heater housing and the graphite rod, the second gas inlet disposed at the distal end and fluidly connected to the plurality of flow channels of the inject assembly.