EPI pre-heat ring
Embodiments of the present disclosure generally relate to a process chamber having a pre-heat ring for heating the process gas. In one embodiment, the process chamber includes a chamber body defining an interior processing region, a substrate support disposed within the chamber body, the substrate support having a substrate support surface for supporting a substrate, and a pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is tilted downwardly by a predetermined angle towards the gas exhaust side with respect to the substrate support surface to promote the purge gas flowing more through the gas exhaust side than the gas injection side.
1. A pre-heat ring assembly for use in a semiconductor processing chamber, comprising:
an annular body that has a central opening sized to be disposed around the periphery of a substrate support, the annular body comprising a first half circular portion and a second half circular portion, wherein:
the first half circular portion has an upper surface and a bottom surface parallel to the upper surface,
the second half circular portion has an upper surface and a bottom surface parallel to the upper surface of the second half circular portion,
the first half circular portion connects to the second portion along a line across the annular body through the central opening,
the upper surface of the first half circular portion forms an angle with the upper surface of the second half circular portion, and
the upper surface of the second half circular portion is tilted downwardly with respect to the upper surface of the first half circular portion at the angle so that the upper surface of the second half circular portion is tilted downwardly with respect to the substrate support surface of the substrate support at the angle and the second half circular portion is tilted downwardly towards an gas exhaust side of the semiconductor processing chamber.
2. The pre-heat ring assembly of claim 1 , wherein the second half circular portion is substantially symmetric to the first half circular portion.
3. The pre-heat ring assembly of claim 1 , wherein the angle is about 2° to about 6°.
4. The pre-heat ring assembly of claim 1 , wherein the first half circular portion and the second half circular portion of the annular body are formed as a single integral piece.
5. A process chamber for processing a substrate, comprising:
a chamber body defining an interior processing region;
a substrate support disposed within the chamber body, the substrate support having a substrate support surface; and
a pre-heat ring assembly comprising an annular body that has a central opening, the annular body being positioned on a ring support disposed within the chamber body so that the central opening is disposed around the periphery of the substrate support, the annular body comprising a first half circular portion and a second half circular portion, wherein:
the first half circular portion has an upper surface and a bottom surface parallel to the upper surface,
the second half circular portion has an upper surface and a bottom surface parallel to the upper surface of the second portion,
the first half circular portion connects to the second portion along a line across the annular body through the central opening,
the upper surface of the first half circular portion forms an angle with the upper surface of the second half circular portion, and
the upper surface of the second half circular portion is tilted downwardly with respect to the substrate support surface at the angle so that the second half circular portion is tilted towards an gas exhaust side of the chamber body.
6. The process chamber of claim 5 , wherein the annular body is separated from the periphery of the substrate support by a gap.
7. The process chamber of claim 6 , wherein the gap is between about 0.1 mm and about 0.8 mm.
8. The process chamber of claim 5 , wherein the angle is between about 2° to about 6°.
9. The process chamber of claim 5 , wherein the second half circular portion is substantially symmetric to the first half circular portion.
10. The process chamber of claim 5 , wherein the first half circular portion is positioned in proximity to a gas injection side of the chamber body.
11. The process chamber of claim 5 , wherein the second half circular portion is positioned in proximity to a gas exhaust side of the chamber body.
12. The process chamber of claim 5 , wherein the first half circular portion and the second half circular portion of the annular body are formed as a single integral piece.
13. A process chamber for processing a substrate, comprising:
a rotatable substrate support disposed within the process chamber, the substrate support having a substrate support surface;
a lower dome disposed below the substrate support;
an upper dome disposed relatively above the substrate support, the upper dome being opposed to the lower dome;
a ring body disposed around a periphery of the substrate support between the upper dome and the lower dome, wherein the upper dome, the ring body, and the lower dome define an internal volume of the process chamber, the ring body having one or more gas injects arranged in at least one linear group; and
a pre-heat ring assembly comprising an annular body that has a central opening, the annular body being positioned on a ring support disposed within the ring body so that the central opening is disposed around the periphery of the substrate support, the annular body comprising:
a first half circular portion disposed in proximity to a gas injection of the process chamber and
a second half circular portion disposed in proximity to a gas exhaust of the process chamber, wherein:
the first half circular portion has an upper surface and a bottom surface parallel to the upper surface,
the second half circular portion has an upper surface and a bottom surface parallel to the upper surface of the second half circular portion,
the first half circular portion connects to, and forms an angle with, the second half circular portion along a line across the body through the central opening, and
the upper surface of the second half circular portion is tilted downwardly with respect to the substrate support surface at the angle so that the second half circular portion is tilted towards the gas exhaust of the chamber body.
14. The process chamber of claim 13 , wherein the angle is about 2° to about 6°.
15. The process chamber of claim 13 , wherein the first half circular portion and the second half circular portion of the annular body are formed as a single integral piece.