Gapfill methods and processing assemblies
The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method including providing a substrate having a gap in a reaction chamber, providing a first precursor including silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor includes at least one unsaturated carbon-carbon bond and at least one atom selected from oxygen and nitrogen. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one unsaturated bond is a double bond.
1. A method of filling a gap, the method comprising:
providing a substrate comprising a gap in a reaction chamber;
providing a first precursor comprising silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor comprises at least one unsaturated carbon-carbon bond and at least one nitrogen atom, and wherein the first precursor does not comprise oxygen; and
providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material;
thereby at least partially filling the gap with the gap filling material.
2. The method of claim 1 , wherein the first plasma is generated from an inert gas.
3. The method of claim 2 , wherein the inert gas is selected from the group consisting of N2, He, Ne and Ar.
4. The method of claim 1 , wherein the at least one unsaturated carbon-carbon bond is a double bond.
5. The method of claim 1 , wherein the first precursor comprises an alkyl silane.
6. The method of claim 5 , wherein the alkyl silane comprises at least two different alkyl groups.
7. The method of claim 1 , wherein the first precursor comprises an alkoxy silane.
8. The method of claim 1 , wherein the first precursor comprises a vinyl group.
9. The method of claim 1 , wherein the first precursor does not comprise nitrogen.
10. The method of claim 1 , wherein the first precursor does not comprise a halogen.
11. The method of claim 1 , wherein the gap filling material is a fluid at the time of filling the gap.
12. The method of claim 1 , wherein the first plasma is provided into the reaction chamber in pulses.
13. The method of claim 1 , wherein the carbon content of the gap filling material is at least 30 at-%.
14. The method of claim 1 , wherein a second precursor is provided into the reaction chamber in a vapor phase.
15. The method of claim 1 , wherein a second plasma is provided into the reaction chamber after providing the first plasma into the reaction chamber to amend the properties of the gap filling material.
16. The method of claim 15 , wherein the second plasma is generated from a gas comprising hydrogen.
17. The method of claim 1 , wherein the gap filling material has a wet etch rate ratio of below 0.6.
18. A method of filling a gap, the method comprising:
providing a substrate comprising a gap in a reaction chamber;
providing a first precursor into the reaction chamber in a vapor phase; and
providing a first plasma into the reaction chamber to form a fluid gap filling material; and
thereby at least partially filling the gap with the gap filling material,
wherein the first precursor comprises a molecule according to formula (I or II),
wherein each of R1, R2, R3 and R4 is independently selected from H and C1 to C6 saturated and unsaturated alkyl groups, with the proviso that at least one of R1, R2, R3 and R4 comprises independently a silicon atom and a nitrogen atom.