Low-K dielectric gapfill by flowable deposition
Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate.
1. A method of filling a trench, the method comprising:
transferring a patterned substrate comprising the trench into a substrate processing region of a substrate processing chamber;
flowing an oxygen-containing precursor into a remote plasma region while igniting a remote plasma to form a radical-oxygen precursor;
flowing the radical oxygen precursor into the substrate processing region;
flowing a first silicon-and-carbon-containing precursor into the substrate processing region without first passing the first silicon-and-carbon-containing precursor through a plasma, wherein the first silicon-and-carbon-containing precursor has a Si—O:Si ratio of less than 3;
flowing a second silicon-and-carbon-containing precursor into the substrate processing region without first passing the second silicon-and-carbon-containing precursor through a plasma, wherein the second silicon-and-carbon-containing precursor has a Si—O: Si ratio of greater than 2;
combining the first silicon-and-carbon-containing precursor, the second silicon-and-carbon-containing precursor and the radical oxygen precursor in the substrate processing region to form a low-k dielectric layer on the patterned substrate, wherein a portion of the low-k dielectric layer deposits on the substrate and flows along the surface during formation of the low-k dielectric layer to fill the trench, and wherein a partial pressure ratio of the first silicon-and-carbon-containing precursor to the second silicon-and-carbon-containing precursor within the substrate processing region is reduced during formation of the low-k dielectric layer, wherein a second partial pressure ratio of the first silicon-and-carbon-containing precursor to the second silicon-and-carbon-containing precursor measured in the substrate processing region at the end of the formation of the low-k dielectric layer is less than a first partial pressure ratio at the beginning of the formation of the low-k dielectric layer by at least 25%; and
solidifying the low-k dielectric layer within the trench.
2. The method of claim 1 , wherein the low-k dielectric layer has a dielectric constant of between 2.2 and 3.0 following solidification.
3. The method of claim 1 , wherein a temperature of the substrate during formation of the low-k dielectric layer is less than 150° C.
4. The method of claim 1 , wherein the first silicon-and-carbon-containing precursor is octamethylcyclotetrasiloxane or tetramethylcyclotetrasiloxane.
5. The method of claim 1 , wherein the first silicon-and-carbon-containing precursor has a Si—O:Si ratio of 1.
6. The method of claim 1 , wherein the second silicon-and-carbon-containing precursor has a Si—O:Si ratio of 4.
7. The method of claim 1 , wherein the second silicon-and-carbon-containing precursor is tetramethyl orthosilicate.