IP Library › Granted Patent US 12,188,152
Granted Patent B2
US 12,188,152 · App. 18/371,423 · Granted Jan 7, 2025

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class

Inventors: Kensho Tanaka (Chichibu, JP); Yoshikazu Umeta (Chichibu, JP)
Assignee: Resonac Corporation
C30B29/36C23C16/325C23C16/4408C23C16/52C30B25/16C30B25/205H01L21/02378H01L21/02532H01L21/02579H01L21/0262H01L29/1608H01L29/167
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Quick Facts
Patent No.
US 12,188,152
App. No.
18/371,423
Granted
Jan 7, 2025
Kind
B2
Abstract

A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×10 14 cm −3 at any position in the plane of the epitaxial layer.

Claims (22)

1. A SiC epitaxial wafer, comprising:

a SiC substrate; and,

an epitaxial layer of SiC laminated on the SiC substrate,

wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and

the concentration of boron is less than 1.0×10 14 cm −3 at the center of the epitaxial layer and at a plurality of points which are 5 mm inside from the outer periphery of the epitaxial layer.

2. The SiC epitaxial wafer according to claim 1 , wherein the plurality of points are arranged in a direction passing through the center of the SiC epitaxial wafer and in a direction parallel or perpendicular to the orientation flat OF.

3. The SiC epitaxial wafer according to claim 1 , wherein the plurality of points are arranged in the cross direction with the center of the SiC epitaxial wafer as the origin.

4. The SiC epitaxial wafer according to claim 1 , wherein the plurality of points are arranged in a radial direction passing through the center of the SiC epitaxial wafer.

5. The SiC epitaxial wafer according to claim 1 , wherein the plurality of points are four points.

6. The SiC epitaxial wafer according to claim 5 , wherein the four points are arranged in a direction passing through the center of the SiC epitaxial wafer and in a direction parallel or perpendicular to the orientation flat OF.

7. The SiC epitaxial wafer according to claim 5 , wherein the four points are arranged in the cross direction with the center of the SiC epitaxial wafer as the origin.

8. The SiC epitaxial wafer according to claim 5 , wherein the four points are arranged in a radial direction passing through the center of the SiC epitaxial wafer.

9. The SiC epitaxial wafer according to claim 1 , wherein the diameter is 150 mm or more.

10. The SiC epitaxial wafer according to claim 2 , wherein the diameter is 150 mm or more.

11. The SiC epitaxial wafer according to claim 3 , wherein the diameter is 150 mm or more.

12. The SiC epitaxial wafer according to claim 4 , wherein the diameter is 150 mm or more.

13. The SiC epitaxial wafer according to claim 5 , wherein the diameter is 150 mm or more.

14. The SiC epitaxial wafer according to claim 1 , wherein the diameter is 200 mm or more.

15. The SiC epitaxial wafer according to claim 2 , wherein the diameter is 200 mm or more.

16. The SiC epitaxial wafer according to claim 3 , wherein the diameter is 200 mm or more.

17. The SiC epitaxial wafer according to claim 4 , wherein the diameter is 200 mm or more.

18. The SiC epitaxial wafer according to claim 5 , wherein the diameter is 200 mm or more.

Assignments (1)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
Priority Claims (1)
JP 2021-128273 · Aug 4, 2021 · national
Continuity (2)
Continuation 17879474 · Aug 2, 2022
Related Publication 20240011191A1 · Jan 11, 2024
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Cited By (1)
US 12,546,030