IP Library Patent Application 18373660
Patent Application
App. No. 18/373,660

CHEMICAL MECHANICAL POLISHING PAD

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Quick Facts
Patent No.
US None
App. No.
18/373,660
Abstract

A chemical mechanical polishing pad includes a polishing layer. The polishing layer comprises a matrix polymer and 1 to 20 wt % based on total weight of the polishing layer of non-reactive, non-expandable polymeric particles dispersed in the matrix polymer and less than 2 wt % expandable polymeric microspheres. An SEM of a cut surface of the polishing layer shows a crescent shaped opening adjacent to at least a portion of the polymer particles and separating a surface of that portion of the polymer particles from the matrix polymer.

Claims (10)

1 . A chemical mechanical polishing pad having a polishing layer, wherein the polishing layer comprises a matrix polymer and 1 to 20 wt % based on total weight of the polishing layer of non-reactive, non-expandable polymeric particles dispersed in the matrix polymer and less than 2 wt % expandable polymeric microspheres, wherein an SEM of a cut surface of the polishing layer shows a crescent shaped opening adjacent to at least a portion of the polymer particles and separating a surface of that portion of the polymer particles from the matrix polymer.

2 . The chemical mechanical polishing pad of claim 1 wherein the non-reactive, non-expandable polymeric particles comprise cross-linked polymethylmethacrylate.

3 . The chemical mechanical polishing pad of claim 1 wherein the non-reactive, non-expandable polymeric particles have an average particle size D50 particle size of 5 to 15 microns.

4 . The chemical mechanical polishing pad of claim 1 wherein the matrix polymer is ductile.

5 . The chemical mechanical polishing pad of claim 1 wherein the matrix polymer is a polyurethane comprising the reaction product an isocyanate terminated prepolymer and an amine curative wherein the isocyanate terminated prepolymer comprises a reaction product of a polyol prepolymer, toluene diisocyanate, a low molecular weight polyol wherein the reaction product is further reacted with an amine curative.

6 . The chemical mechanical polishing pad of claim 5 wherein the isocyanate prepolymer comprises a blend of a first reaction product of a polypropylene glycol, toluene diisocyanate and the low molecular weight polyol and a second reaction product of a polytetramethylene glycol, toluene diisocyanate and the low molecular weight polyol, wherein the first reaction product and the second reaction product are present in a weight ratio of 1:20 to 1:1.

7 . The chemical mechanical polishing pad of claim 1 having a density of at least 1.1 grams per cubic centimeter.

8 . The chemical mechanical polishing pad of claim 1 further including grooves on the surface of the polishing layer.

9 . The chemical mechanical polishing pad of claim 8 wherein the grooves are machined into the surface of the polishing layer.

10 . The chemical mechanical polishing pad of claim 1 wherein the non-reactive, non-expandable polymeric particles are porous.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC.
To: DUPONT ELECTRONIC MATERIALS HOLDING, INC.
Reel/Frame 069274/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2023
From: YEH, FENGJI; QIAN, BAINIAN
To: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
Reel/Frame 065360/0174 →