Vacuum insulated panel with tellurium oxide and/or vanadium oxide inclusive seal
A vacuum insulating panel includes may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal comprising a first seal layer and/or a second seal layer; and wherein the first seal layer may include from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO 4 and TeO 3 , and wherein the first seal layer comprises more TeO 3 than TeO 4 by wt. %.
1 . A vacuum insulating panel comprising:
a first substrate;
a second substrate;
a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure;
a seal provided at least partially between at least the first and second substrates, the seal comprising a first seal layer and a second seal layer; and
wherein the first seal layer comprises from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO 4 and TeO 3 , and wherein the first seal layer comprises more TeO 3 than TeO 4 by wt. %.
2 . The vacuum insulating panel of claim 1 , wherein the first seal layer comprises from about 40-70 wt. % tellurium oxide.
3 . The vacuum insulating panel of claim 1 , wherein from about 60-95% of Te in the first seal layer is in a form of TeO 3 .
4 . The vacuum insulating panel of claim 1 , wherein from about 70-90% of Te in the first seal layer is in a form of TeO 3 .
5 . The vacuum insulating panel of claim 1 , wherein from about 3-35% of Te in the first seal layer is in a form of TeO 4 .
6 . The vacuum insulating panel of claim 1 , wherein from about 5-25% of Te in the first seal layer is in a form of TeO 4 .
7 . The vacuum insulating panel of claim 1 , wherein from about 10-20% of Te in the first seal layer is in a form of TeO 4 .
8 . The vacuum insulating panel of claim 1 , wherein the tellurium oxide further comprises TeO 3+1 , and wherein the first seal layer comprises more TeO 3 than TeO 3+1 by wt. %.
9 . The vacuum insulating panel of claim 8 , wherein from about 1-9% of Te in the first seal layer is in a form of TeO 3+1 .
10 . The vacuum insulating panel of claim 1 , wherein a ratio TeO 4 :TeO 3 in the first seal layer is from about 0.05 to 0.40.
11 . The vacuum insulating panel of claim 1 , wherein a ratio TeO 4 :TeO 3 in the first seal layer is from about 0.10 to 0.30.
12 . The vacuum insulating panel of claim 1 , wherein the first seal layer further comprises vanadium oxide, and wherein the first seal layer by wt. % comprises more tellurium oxide than vanadium oxide.
13 . The vacuum insulating panel of claim 12 , wherein the vanadium oxide comprises VO 2 and V 2 O 5 , and wherein more V in the first seal layer is in a form of VO 2 than V 2 O 5 .
14 . The vacuum insulating panel of claim 13 , wherein from about 35-85% of the V in the first seal layer is in a form of VO 2 .
15 . The vacuum insulating panel of claim 13 , wherein from about 50-75% of the V in the first seal layer is in a form of VO 2 .
16 . The vacuum insulating panel of claim 13 , wherein from about 58-67% of the V in the first seal layer is in a form of VO 2 .
17 . The vacuum insulating panel of claim 13 , wherein from about 5-45% of the V in the first seal layer is in a form of V 2 O 5 .
18 . The vacuum insulating panel of claim 13 , wherein from about 10-35% of the V in the first seal layer is in a form of V 2 O 5 .
19 . The vacuum insulating panel of claim 13 , wherein the vanadium oxide further comprises V 2 O 3 , and wherein more V in the first seal layer is in a form of VO 2 than V 2 O 3 .
20 . The vacuum insulating panel of claim 19 , wherein from about 6-20% of the V in the first seal layer is in a form of V 2 O 3 .
21 . The vacuum insulating panel of claim 1 , wherein the first seal layer further comprises from about 10-50 wt. % vanadium oxide, wherein the first seal layer by wt. % comprises more tellurium oxide than vanadium oxide, and wherein the vanadium oxide comprises VO 2 and V 2 O 5 .
22 . The vacuum insulating panel of claim 21 , wherein a ratio V 2 O 5 :VO 2 in the first seal layer is from about 0.10 to 0.90.
23 . The vacuum insulating panel of claim 21 , wherein a ratio V 2 O 5 :VO 2 in the first seal layer is from about 0.20 to 0.80.
24 . The vacuum insulating panel of claim 21 , wherein a ratio V 2 O 5 :VO 2 in the first seal layer is from about 0.25 to 0.50.
25 . The vacuum insulating panel of claim 1 , wherein the first seal layer further comprises from about 12-40 wt. % vanadium oxide, and wherein the first seal layer by wt. % comprises more tellurium oxide than vanadium oxide.
26 . The vacuum insulating panel of claim 1 , wherein the first seal layer is a main seal layer, and the second seal layer is a primer layer.
27 . The vacuum insulating panel of claim 1 , wherein the second seal layer comprises bismuth oxide and boron oxide.
28 . The vacuum insulating panel of claim 27 , wherein the second seal layer comprises from about 1-40 mol % bismuth and from about 3-40 mol % boron on an elemental basis, and comprises at least two times more boron than bismuth on an elemental basis in terms of mol %.
29 . The vacuum insulating panel of claim 1 , wherein the seal further comprises a third seal layer, and wherein for at least one location of the seal, the first seal layer has a first thickness, the second seal layer has a second thickness, and the third seal layer has a third thickness; and wherein the first thickness is greater than the second thickness and less than the third thickness.
30 . The vacuum insulating panel of claim 29 , wherein the third seal layer comprises from about 1-40 mol % bismuth and comprises at least two times more boron than bismuth on an elemental basis in terms of mol %.
31 . The vacuum insulating panel of claim 1 , wherein the first seal layer has a density of from about 2.8-4.0 g/cm 3 , the second seal layer has a density of from about 3.0-4.2 g/cm 3 , and wherein the density of the second seal layer is at least about 0.20 g/cm 3 greater than the density of the first seal layer.
32 . The vacuum insulating panel of claim 1 , wherein, for at least one location of the seal, a width of the first seal layer is less than a width of the second seal layer by at least about 1 mm.
33 . The vacuum insulating panel of claim 1 , wherein the seal is substantially lead-free.
34 . The vacuum insulating panel of claim 1 , wherein the first seal layer has an average particle size (D50) of from about 5-20 μm.
35 . The vacuum insulating panel of claim 1 , wherein the first seal layer comprises: from about 40-70% wt. % tellurium oxide, from about 12-40 wt. % vanadium oxide, from about 3-30 wt. % aluminum oxide, and from about 1-25 wt. % silicon oxide.
36 . The vacuum insulating panel of claim 1 , wherein the second seal layer comprises from about 1-12 mol % bismuth oxide, from about 15-40% mol % boron oxide, and from about 0-50 mol % silicon oxide.
37 . The vacuum insulating panel of claim 1 , wherein the first seal layer has a physical thickness of from about from about 40-100 μm.
38 . The vacuum insulating panel of claim 1 , wherein the second seal layer has a physical thickness of from about 20-70 μm or from about 100-220 μm.
39 . The vacuum insulating panel of claim 1 , wherein, for the at least one location of the seal, a thickness of the first seal layer is at least about 10 μm thicker than a thickness of the second seal layer.
40 . The vacuum insulating panel of claim 1 , wherein, for the at least one location of the seal, an outer lateral edge of the first seal layer is spaced inwardly from an outer lateral edge of the second seal layer by an offset distance of at least about 0.5 mm.
41 . The vacuum insulating panel of claim 1 , wherein the first and second substrates comprise glass substrates.
42 . The vacuum insulating panel of claim 1 , wherein the first and second substrates comprise tempered glass substrates or heat strengthened glass substrates.
43 . The vacuum insulating panel of claim 1 , wherein the seal is a hermetic edge seal of the vacuum insulating panel.
44 . The vacuum insulating panel of claim 1 , wherein the panel is configured for use in a window.
45 . The vacuum insulating panel of claim 1 , wherein tellurium oxide has the highest wt. % of any metal oxide in the first seal layer.
46 . A vacuum insulating panel comprising:
a first substrate;
a second substrate;
a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure;
a seal provided at least partially between at least the first and second substrates, the seal comprising a first seal layer, a second seal layer, and a third seal layer;
wherein the second and third seal layers each comprise boron oxide and/or bismuth oxide; and
wherein the first seal layer comprises from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO 4 and TeO 3 , and wherein the first seal layer comprises more TeO 3 than TeO 4 by wt. %.
47 . The vacuum insulating panel of claim 46 , wherein for at least one location of the seal, the first seal layer has a first thickness, the second seal layer has a second thickness, and the third seal layer has a third thickness; and wherein the first thickness is greater than the second thickness and less than the third thickness.
48 . The vacuum insulating panel of claim 46 , wherein at least one of the second and third seal layers comprises from about 1-40 mol % bismuth and from about 3-40 mol % boron on an elemental basis, and comprises more boron than bismuth on an elemental basis in terms of mol %.
49 . The vacuum insulating panel of claim 46 , wherein the first seal layer comprises from about 40-70 wt. % tellurium oxide.
50 . The vacuum insulating panel of claim 46 , wherein from about 60-95% of Te in the first seal layer is in a form of TeO 3 .
51 . The vacuum insulating panel of claim 46 , wherein from about 5-25% of Te in the first seal layer is in a form of TeO 4 .
52 . The vacuum insulating panel of claim 46 , wherein the tellurium oxide further comprises TeO 3+1 , and wherein the first seal layer comprises more TeO 3 than TeO 3+1 by wt. %.
53 . The vacuum insulating panel of claim 46 , wherein the first seal layer further comprises vanadium oxide, and wherein the first seal layer by wt. % comprises more tellurium oxide than vanadium oxide.
54 . The vacuum insulating panel of claim 53 , wherein the vanadium oxide comprises VO 2 and V 2 O 5 , and wherein more V in the first seal layer is in a form of VO 2 than V 2 O 5 .
55 . The vacuum insulating panel of claim 54 , wherein from about 50-75% of the V in the first seal layer is in a form of VO 2 and from about 5-45% of the V in the first seal layer is in a form of V 2 O 5 .
56 . The vacuum insulating panel of claim 54 , wherein a ratio V 2 O 5 :VO 2 in the first seal layer is from about 0.20 to 0.80.
57 . The vacuum insulating panel of claim 46 , wherein at least one of the second and third seal layers comprises from about 1-40 mol % bismuth and comprises at least three times more boron than bismuth on an elemental basis in terms of mol %.
58 . The vacuum insulating panel of claim 46 , wherein tellurium oxide has the highest wt. % of any metal oxide in the first seal layer.