Display device
View Patent ↗To reduce power consumption of a display device with the use of a simple structure and a simple operation. The display device includes an input device. Input of an image signal to a driver circuit is controlled in accordance with an image operation signal output from the input device. Specifically, input of image signals at the time when the input device is not operated is less frequent than that at the time when the input device is operated. Accordingly, display degradation (deterioration of display quality) caused when the display device is used can be prevented and power consumed when the display device is not used can be reduced.
1. A liquid crystal display device comprising:
a pixel portion over a glass substrate;
a first driver circuit over the glass substrate; and
a second driver circuit over the glass substrate,
wherein the pixel portion comprises:
a gate electrode provided over the glass substrate;
a first insulating layer provided over the gate electrode;
a first oxide semiconductor layer provided over the first insulating layer, the first oxide semiconductor layer having a first thickness;
a second oxide semiconductor layer provided over the first oxide semiconductor layer, the second oxide semiconductor layer having a second thickness greater than the first thickness;
a first conductive layer and a second conductive layer provided over and being in electrical contact with the second oxide semiconductor layer;
a second insulating layer provided over the first conductive layer and the second conductive layer, the second insulating layer comprising silicon oxide;
a third insulating layer provided over the second insulating layer, the third insulating layer comprising silicon nitride; and
a fourth insulating layer provided over the third insulating layer, the fourth insulating layer comprising an organic material,
wherein the gate electrode overlaps with the first conductive layer and the second conductive layer,
wherein the first insulating layer comprises a first insulating film comprising silicon nitride and a second insulating film comprising silicon oxide over the first insulating film,
wherein the first conductive layer is in contact with a side surface of the first oxide semiconductor layer and a side surface of the second oxide semiconductor layer, and
wherein the second insulating layer is in contact with a top surface of the second oxide semiconductor layer and a top surface of the first insulating layer.
2. The liquid crystal display device according to claim 1 , wherein the gate electrode has a tapered angle.
3. The liquid crystal display device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.
4. A liquid crystal display device comprising:
a pixel portion over a glass substrate;
a first driver circuit over the glass substrate; and
a second driver circuit over the glass substrate,
wherein the pixel portion comprises:
a gate electrode provided over the glass substrate;
a first insulating layer provided over the gate electrode;
a first oxide semiconductor layer provided over the first insulating layer, the first oxide semiconductor layer having a first thickness;
a second oxide semiconductor layer provided over the first oxide semiconductor layer, the second oxide semiconductor layer having a second thickness greater than the first thickness;
a first conductive layer and a second conductive layer provided over and being in electrical contact with the second oxide semiconductor layer;
a second insulating layer provided over the first conductive layer and the second conductive layer, the second insulating layer comprising silicon oxide;
a third insulating layer provided over the second insulating layer, the third insulating layer comprising silicon nitride; and
a fourth insulating layer provided over the third insulating layer, the fourth insulating layer comprising an organic material,
wherein the gate electrode overlaps with the first conductive layer and the second conductive layer,
wherein the first insulating layer comprises a first insulating film comprising silicon nitride and a second insulating film comprising silicon oxide over the first insulating film,
wherein the first conductive layer is in contact with a side surface of the first oxide semiconductor layer and a side surface of the second oxide semiconductor layer,
wherein the second insulating layer is in contact with a top surface of the second oxide semiconductor layer and a top surface of the first insulating layer, and
wherein the first oxide semiconductor layer comprises a crystalline portion.
5. The liquid crystal display device according to claim 4 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.
6. The liquid crystal display device according to claim 4 , wherein the second oxide semiconductor layer comprises a crystalline portion.
7. The liquid crystal display device according to claim 4 , wherein the gate electrode has a tapered angle.