IP Library › Granted Patent US 12,293,993
Granted Patent B2
US 12,293,993 · App. 18/379,925 · Granted May 6, 2025

3D chip sharing data bus

Inventors: Javier A. DeLaCruz (San Jose, CA); Steven L. Teig (Menlo Park, CA); Ilyas Mohammed (San Jose, CA)
Assignee: Adeia Semiconductor Inc.
H01L25/0657H01L21/8221H01L23/49827H01L23/5225H01L23/528H01L23/5286H01L23/60H01L24/32H01L25/50H01L27/0688H01L23/50H01L24/06H01L24/08H01L24/80H01L2224/05571H01L2224/08147H01L2224/09181H01L2224/80895H01L2224/80896
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Quick Facts
Patent No.
US 12,293,993
App. No.
18/379,925
Granted
May 6, 2025
Kind
B2
Abstract

Some embodiments of the invention provide a three-dimensional (3D) circuit that is formed by stacking two or more integrated circuit (IC) dies to at least partially overlap and to share one or more interconnect layers that distribute power, clock and/or data-bus signals. The shared interconnect layers include interconnect segments that carry power, clock and/or data-bus signals. In some embodiments, the shared interconnect layers are higher level interconnect layers (e.g., the top interconnect layer of each IC die). In some embodiments, the stacked IC dies of the 3D circuit include first and second IC dies. The first die includes a first semiconductor substrate and a first set of interconnect layers defined above the first semiconductor substrate. Similarly, the second IC die includes a second semiconductor substrate and a second set of interconnect layers defined above the second semiconductor substrate. As further described below, the first and second dies in some embodiments are placed in a face-to-face arrangement (e.g., a vertically stacked arrangement) that has the first and second set of interconnect layers facing each other. In some embodiments, a subset of one or more interconnect layers of the second set interconnect layers of the second die has interconnect wiring that carries power, clock and/or data-bus signals that are supplied to the first IC die.

Claims (23)

1. A device package comprising:

a first device comprising first metal line layers;

a second device comprising second metal line layers; and

one or more direct bonded interconnects coupling the first metal line layers to the second metal line layers, the one or more direct bonded interconnects defining an unserialized data path.

2. The device package of claim 1 , wherein the unserialized data path provides bidirectional communication between the first device and the second device.

3. The device package of claim 1 , wherein the unserialized data path is capable of supplying at least one of power or clock signals from the second metal line layers to one or more electronic components of the first device.

4. The device package of claim 1 , wherein the first device is hybrid bonded to the second device, and wherein the one or more direct bonded interconnects are formed via the hybrid bond.

5. The device package of claim 1 , wherein the unserialized data path allows one or more signals to traverse between the first and second devices without an intervening circuit.

6. The device package of claim 1 , further comprising a first component of the first device connected to a second component of the second device via the unserialized data path.

7. The device package of claim 6 , wherein the first component connected to the second component defines an integrated circuit.

8. The device package of claim 1 , further comprising a bonding layer between an uppermost first metal line layer of the first metal line layers and an uppermost second metal line layer of the second metal line layers.

9. The device package of claim 1 , wherein the unserialized data path is formed by a plurality of interconnect segments which are parallel lines.

10. The device package of claim 9 , wherein the parallel lines are physically parallel lines.

11. The device package of claim 1 , wherein the direct bonded interconnects carry a set of data signals which are from a memory that is defined on the second device.

12. The device package of claim 1 , wherein the direct bonded interconnects carry a set of data signals which are from a device outside the device package.

13. The device package of claim 12 , further comprising a data input/output interface defined on the second device, wherein the set of data signals from a circuit outside of the device package pass through the data input/output interface before being forwarded to the direct bonded interconnects.

14. The device package of claim 1 , further comprising a third device that is vertically stacked with the first and second devices and that receives a data signal carried by the unserialized data path.

15. The device package of claim 1 , wherein the direct bonded interconnects comprise a set of at least 1000 direct-bonded connections/mm 2 allow signals to traverse between the first and second devices.

16. The device package of claim 1 , wherein the direct bonded interconnects comprise a set of at least 10000 direct-bonded connections/mm 2 allow signals to traverse between the first and second devices.

17. The device package of claim 1 , wherein the direct bonded interconnects have a center-to-center pitch of 5 μm or less.

18. The device package of claim 1 , wherein the direct bonded interconnects have a center-to-center pitch of 0.5 μm or less.

19. The device package of claim 1 , wherein the unserialized data path comprises native connections that allow signals to span the first and second devices without any modifications.

20. The device package of claim 19 , wherein the native connections allow the signals to span the first and second devices without traversing any intervening circuit.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2024
From: DELACRUZ, JAVIER A.; TEIG, STEVEN L.; MOHAMMED, ILYAS
To: XCELSIS CORPORATION
Reel/Frame 066215/0943 →
CHANGE OF NAME Recorded Jan 23, 2024
From: XCELSIS CORPORATION
To: ADEIA SEMICONDUCTOR INC.
Reel/Frame 066364/0514 →
Continuity (10)
Continuation 17105272 · Nov 25, 2020
Continuation 16806854 · Mar 2, 2020
Continuation 15976811 · May 10, 2018
Continuation In Part 15725030 · Oct 4, 2017
Provisional Application 62619910 · Jan 21, 2018
Provisional Application 62575240 · Oct 20, 2017
Provisional Application 62575184 · Oct 20, 2017
Provisional Application 62575259 · Oct 20, 2017
Provisional Application 62405833 · Oct 7, 2016
Related Publication 20240266325A1 · Aug 8, 2024
References Cited (248)
US 3059443A · Gail · 1962 [cited by applicant]
US 5016138A · Woodman · 1991 [cited by applicant]
US 5376825A · Tsukamoto et al. · 1994 [cited by applicant]
US 5579207A · Hayden et al. · 1996 [cited by applicant]
US 5621863A · Boulet et al. · 1997 [cited by applicant]
US 5673478A · Beene et al. · 1997 [cited by applicant]
US 5717832A · Steimle et al. · 1998 [cited by applicant]
US 5740326A · Boulet et al. · 1998 [cited by applicant]
US 5793115A · Zavracky et al. · 1998 [cited by applicant]
US 5909587A · Tran · 1999 [cited by applicant]
US 6320255B1 · Terrill et al. · 2001 [cited by applicant]
US 6421654B1 · Gordon · 2002 [cited by applicant]
US 6707124B2 · Wachtler et al. · 2004 [cited by applicant]
US 6844624B1 · Kiritani · 2005 [cited by applicant]
US 6891447B2 · Song · 2005 [cited by applicant]
US 6909194B2 · Farnworth et al. · 2005 [cited by applicant]
US 6917219B2 · New · 2005 [cited by applicant]
US 6962835B2 · Tong et al. · 2005 [cited by applicant]
US 7046522B2 · Sung et al. · 2006 [cited by applicant]
US 7099215B1 · Rotenberg et al. · 2006 [cited by applicant]
US 7124250B2 · Kyung · 2006 [cited by applicant]
US 7202566B2 · Liaw · 2007 [cited by applicant]
US 7485968B2 · Enquist et al. · 2009 [cited by applicant]
US 7638869B2 · Irsigler et al. · 2009 [cited by applicant]
US 7692946B2 · Taufique et al. · 2010 [cited by applicant]
US 7863918B2 · Jenkins et al. · 2011 [cited by applicant]
US 7977962B2 · Hargan et al. · 2011 [cited by applicant]
US 8032711B2 · Black et al. · 2011 [cited by applicant]
US 8042082B2 · Solomon · 2011 [cited by applicant]
US 8110899B2 · Reed et al. · 2012 [cited by applicant]
US 8148814B2 · Furuta et al. · 2012 [cited by applicant]
US 8223523B2 · Jin et al. · 2012 [cited by applicant]
US 8223524B2 · Chung · 2012 [cited by applicant]
US 8228684B2 · Losavio et al. · 2012 [cited by applicant]
US 8233303B2 · Best et al. · 2012 [cited by applicant]
US 8389378B2 · Enquist et al. · 2013 [cited by applicant]
US 8432467B2 · Jaworski et al. · 2013 [cited by applicant]
US 8441831B2 · Ku et al. · 2013 [cited by applicant]
US 8516409B2 · Coteus et al. · 2013 [cited by applicant]
US 8546955B1 · Wu · 2013 [cited by applicant]
US 8547769B2 · Saraswat et al. · 2013 [cited by applicant]
US 8552569B2 · Lee · 2013 [cited by applicant]
US 8704384B2 · Wu et al. · 2014 [cited by applicant]
US 8736068B2 · Bartley et al. · 2014 [cited by applicant]
US 8797818B2 · Jeddeloh · 2014 [cited by applicant]
US 8816506B2 · Kawashita et al. · 2014 [cited by applicant]
US 8860199B2 · Black et al. · 2014 [cited by applicant]
US 8885380B2 · Kang et al. · 2014 [cited by applicant]
US 8901749B2 · Kim et al. · 2014 [cited by applicant]
US 8907439B1 · Kay et al. · 2014 [cited by applicant]
US 8930647B1 · Smith · 2015 [cited by applicant]
US 8947931B1 · D'Abreu · 2015 [cited by applicant]
US 8987066B2 · Grobelny et al. · 2015 [cited by applicant]
US 9030253B1 · Ngai · 2015 [cited by applicant]
US 9067272B2 · Sutanto et al. · 2015 [cited by applicant]
US 9076700B2 · Kawashita et al. · 2015 [cited by applicant]
US 9076770B2 · Foster et al. · 2015 [cited by applicant]
US 9142262B2 · Ware · 2015 [cited by applicant]
US 9190392B1 · Shinde et al. · 2015 [cited by applicant]
US 9230940B2 · Goodnow et al. · 2016 [cited by applicant]
US 9300298B2 · Cordero et al. · 2016 [cited by applicant]
US 9318418B2 · Kawashita et al. · 2016 [cited by applicant]
US 9418964B2 · Chang et al. · 2016 [cited by applicant]
US 9432298B1 · Smith · 2016 [cited by applicant]
US 9478496B1 · Lin · 2016 [cited by applicant]
US 9484326B2 · Keeth et al. · 2016 [cited by applicant]
US 9497854B2 · Giuliano · 2016 [cited by applicant]
US 9501603B2 · Barowski et al. · 2016 [cited by applicant]
US 9508607B2 · Chua-Eoan et al. · 2016 [cited by applicant]
US 9640233B2 · Sohn · 2017 [cited by applicant]
US 9645603B1 · Chall et al. · 2017 [cited by applicant]
US 9647187B1 · Yap et al. · 2017 [cited by applicant]
US 9691739B2 · Kawashita et al. · 2017 [cited by applicant]
US 9726691B2 · Garibay et al. · 2017 [cited by applicant]
US 9746517B2 · Whetsel · 2017 [cited by applicant]
US 9747959B2 · Seo · 2017 [cited by applicant]
US 9825843B2 · Thottethodi et al. · 2017 [cited by applicant]
US 9871014B2 · Haba · 2018 [cited by applicant]
US 9915978B2 · Dabby et al. · 2018 [cited by applicant]
US 9934832B2 · Shibata et al. · 2018 [cited by applicant]
US 10121743B2 · Kamal et al. · 2018 [cited by applicant]
US 10180692B2 · Kouchi · 2019 [cited by applicant]
US 10241150B2 · Woo et al. · 2019 [cited by applicant]
US 10255969B2 · Eom et al. · 2019 [cited by applicant]
US 10262911B1 · Gong et al. · 2019 [cited by applicant]
US 10269586B2 · Chou et al. · 2019 [cited by applicant]
US 10289604B2 · Sankaralingam et al. · 2019 [cited by applicant]
US 10373657B2 · Kondo et al. · 2019 [cited by applicant]
US 10446207B2 · Kim et al. · 2019 [cited by applicant]
US 10446601B2 · Otake et al. · 2019 [cited by applicant]
US 10522352B2 · Delacruz et al. · 2019 [cited by applicant]
US 10580735B2 · Mohammed et al. · 2020 [cited by applicant]
US 10580757B2 · Nequist et al. · 2020 [cited by applicant]
US 10580817B2 · Otake et al. · 2020 [cited by applicant]
US 10586786B2 · Delacruz et al. · 2020 [cited by applicant]
US 10593667B2 · Delacruz et al. · 2020 [cited by applicant]
US 10600691B2 · Delacruz et al. · 2020 [cited by applicant]
US 10600735B2 · Delacruz et al. · 2020 [cited by applicant]
US 10600780B2 · Delacruz et al. · 2020 [cited by applicant]
US 10607136B2 · Teig et al. · 2020 [cited by applicant]
US 10672663B2 · Delacruz et al. · 2020 [cited by applicant]
US 10672743B2 · Teig et al. · 2020 [cited by applicant]
US 10672744B2 · Teig et al. · 2020 [cited by applicant]
US 10672745B2 · Teig et al. · 2020 [cited by applicant]
US 10719762B2 · Teig et al. · 2020 [cited by applicant]
US 10762420B2 · Teig et al. · 2020 [cited by applicant]
US 20010017418A1 · Noguchi et al. · 2001 [cited by applicant]
US 20020008309A1 · Akiyama · 2002 [cited by examiner]
US 20030102495A1 · Huppenthal et al. · 2003 [cited by applicant]
US 20050116331A1 · Tsunozaki · 2005 [cited by applicant]
US 20050127490A1 · Black et al. · 2005 [cited by applicant]
US 20060036559A1 · Nugent · 2006 [cited by applicant]
US 20060087013A1 · Hsieh · 2006 [cited by applicant]
US 20070220207A1 · Black et al. · 2007 [cited by applicant]
US 20080017971A1 · Hollis · 2008 [cited by applicant]
US 20080061373A1 · Park · 2008 [cited by applicant]
US 20080220565A1 · Hsu et al. · 2008 [cited by applicant]
US 20090070727A1 · Solomon · 2009 [cited by applicant]
US 20100140750A1 · Toms · 2010 [cited by applicant]
US 20100261159A1 · Hess et al. · 2010 [cited by applicant]
US 20100283085A1 · Bemanian et al. · 2010 [cited by applicant]
US 20110026293A1 · Riho · 2011 [cited by applicant]
US 20110084365A1 · Law et al. · 2011 [cited by applicant]
US 20110131391A1 · Barowski et al. · 2011 [cited by applicant]
US 20110147949A1 · Karp et al. · 2011 [cited by applicant]
US 20120092062A1 · Lee et al. · 2012 [cited by applicant]
US 20120119357A1 · Byeon et al. · 2012 [cited by applicant]
US 20120136913A1 · Duong et al. · 2012 [cited by applicant]
US 20120170345A1 · Choi et al. · 2012 [cited by applicant]
US 20120201068A1 · Ware · 2012 [cited by applicant]
US 20120242346A1 · Wang et al. · 2012 [cited by applicant]
US 20120262196A1 · Yokou · 2012 [cited by applicant]
US 20120286431A1 · Foster et al. · 2012 [cited by applicant]
US 20120313263A1 · Barth · 2012 [cited by applicant]
US 20130021866A1 · Lee · 2013 [cited by applicant]
US 20130032950A1 · Perego et al. · 2013 [cited by applicant]
US 20130051116A1 · En et al. · 2013 [cited by applicant]
US 20130144542A1 · Ernst et al. · 2013 [cited by applicant]
US 20130187292A1 · Semmelmeyer et al. · 2013 [cited by applicant]
US 20130207268A1 · Chapelon · 2013 [cited by applicant]
US 20130242500A1 · Liu et al. · 2013 [cited by applicant]
US 20130275823A1 · Cordero et al. · 2013 [cited by applicant]
US 20130321074A1 · Ko et al. · 2013 [cited by applicant]
US 20140022002A1 · Chua-Eoan et al. · 2014 [cited by applicant]
US 20140285253A1 · Jeon et al. · 2014 [cited by applicant]
US 20140323046A1 · Asai et al. · 2014 [cited by applicant]
US 20140369148A1 · Matsui et al. · 2014 [cited by applicant]
US 20150061097A1 · Pham et al. · 2015 [cited by applicant]
US 20150199997A1 · Ito et al. · 2015 [cited by applicant]
US 20150228584A1 · Huang et al. · 2015 [cited by applicant]
US 20150262902A1 · Shen · 2015 [cited by examiner]
US 20160093601A1 · Ding et al. · 2016 [cited by applicant]
US 20160111386A1 · England et al. · 2016 [cited by applicant]
US 20160218046A1 · Or-Bach et al. · 2016 [cited by applicant]
US 20160225431A1 · Best et al. · 2016 [cited by applicant]
US 20160233134A1 · Lim et al. · 2016 [cited by applicant]
US 20160329312A1 · O'Mullan et al. · 2016 [cited by applicant]
US 20160379115A1 · Burger et al. · 2016 [cited by applicant]
US 20170062366A1 · Enquist · 2017 [cited by examiner]
US 20170092615A1 · Oyamada · 2017 [cited by applicant]
US 20170092616A1 · Su et al. · 2017 [cited by applicant]
US 20170148737A1 · Fasano et al. · 2017 [cited by applicant]
US 20170194309A1 · Evans et al. · 2017 [cited by applicant]
US 20170213787A1 · Alfano et al. · 2017 [cited by applicant]
US 20170227605A1 · Kim et al. · 2017 [cited by applicant]
US 20170278213A1 · Eckert et al. · 2017 [cited by applicant]
US 20170278789A1 · Chuang et al. · 2017 [cited by applicant]
US 20170285584A1 · Nakagawa et al. · 2017 [cited by applicant]
US 20170301625A1 · Mahajan et al. · 2017 [cited by applicant]
US 20180017614A1 · Leedy · 2018 [cited by applicant]
US 20180068218A1 · Yoo et al. · 2018 [cited by applicant]
US 20180286800A1 · Kamal et al. · 2018 [cited by applicant]
US 20180330992A1 · Delacruz et al. · 2018 [cited by applicant]
US 20180330993A1 · Delacruz et al. · 2018 [cited by applicant]
US 20180331037A1 · Mohammed et al. · 2018 [cited by applicant]
US 20180331038A1 · Delacruz et al. · 2018 [cited by applicant]
US 20180331072A1 · Nequist et al. · 2018 [cited by applicant]
US 20180331094A1 · Delacruz et al. · 2018 [cited by applicant]
US 20180331095A1 · Delacruz et al. · 2018 [cited by applicant]
US 20180350775A1 · Delacruz et al. · 2018 [cited by applicant]
US 20180373975A1 · Yu et al. · 2018 [cited by applicant]
US 20180374788A1 · Nakagawa et al. · 2018 [cited by applicant]
US 20190006322A1 · Park · 2019 [cited by applicant]
US 20190042377A1 · Teig et al. · 2019 [cited by applicant]
US 20190042912A1 · Teig et al. · 2019 [cited by applicant]
US 20190042929A1 · Teig et al. · 2019 [cited by applicant]
US 20190043832A1 · Teig et al. · 2019 [cited by applicant]
US 20190051641A1 · Lee et al. · 2019 [cited by applicant]
US 20190109057A1 · Hargan et al. · 2019 [cited by applicant]
US 20190123022A1 · Teig et al. · 2019 [cited by applicant]
US 20190123023A1 · Teig et al. · 2019 [cited by applicant]
US 20190123024A1 · Teig et al. · 2019 [cited by applicant]
US 20190156215A1 · Matveev et al. · 2019 [cited by applicant]
US 20190180183A1 · Diamant et al. · 2019 [cited by applicant]
US 20190214991A1 · Ngai · 2019 [cited by applicant]
US 20190244933A1 · Or-Bach et al. · 2019 [cited by applicant]
US 20200013699A1 · Liu et al. · 2020 [cited by applicant]
US 20200143866A1 · Biswas et al. · 2020 [cited by applicant]
US 20200194052A1 · Shaeffer et al. · 2020 [cited by applicant]
US 20200203318A1 · Nequist et al. · 2020 [cited by applicant]
US 20200219771A1 · Delacruz et al. · 2020 [cited by applicant]
US 20200227389A1 · Teig et al. · 2020 [cited by applicant]
US 20200273798A1 · Mohammed et al. · 2020 [cited by applicant]
US 20200293872A1 · Teig et al. · 2020 [cited by applicant]
US 20200294858A1 · Delacruz et al. · 2020 [cited by applicant]
US 20200372345A1 · Li · 2020 [cited by applicant]
CN 1175805A · 1998 [cited by applicant]
CN 101521194A · 2009 [cited by applicant]
CN 102598255A · 2012 [cited by applicant]
CN 102856306A · 2013 [cited by applicant]
CN 103219325B · 2016 [cited by applicant]
CN 105529279A · 2016 [cited by applicant]
CN 106611756A · 2017 [cited by applicant]
EP 2466632A2 · 2012 [cited by applicant]
EP 3698401A1 · 2020 [cited by applicant]
EP 3698402A1 · 2020 [cited by applicant]
KR 20150137970A · 2015 [cited by applicant]
WO 2017138121A1 · 2017 [cited by applicant]
WO 2019079625A1 · 2019 [cited by applicant]
WO 2019079631A1 · 2019 [cited by applicant]
Author Unknown, “Fact Sheet: New Intel Architectures and Technologies Target Expanded Market Opportunities,” Dec. 12, 2018, 9 pages, Intel Corporation, Santa Clara, California. [cited by applicant]
Author Unknown, “Vector Supercomputer SX Series: SX-Aurora TSUBASA,” Oct. 2017, 2 pages, NEC Corporation. [cited by applicant]
Black, Bryan, “Die Stacking is Happening!,” Dec. 9, 2013, 53 pages, Advanced Micro Devices, Inc., Santa Clara, California. [cited by applicant]
Bansal, Samta, “3D-IC is Now Real: Wide-IO is Driving 3D-IC TSV,” Cadence Flash Memory Summit, Aug. 2012, 14 pages, Cadence Design Systems, Inc. [cited by applicant]
Black, Bryan, et al., “3D Processing Technology and its Impact on iA32 Microprocessors,” Proceedings of 2004 IEEE International Conference on Computer Design: VLSI in Computers and Processors, Oct. 11-13, 2004, 3 pages,… [cited by applicant]
Black, Bryan, et al., “Die Stacking (3D) Microarchitecture,” Proceedings of the 39th Annual IEEE/ACM International Symposium on Microarchitecture, Dec. 9-13, 2006, 11 pages, IEEE, Orlando, Florida. [cited by applicant]
Hajkazemi et al., “Wide I/O or LPDDR? Exploration and Analysis of Performance, Power and Temperature Trade-offs of Emerging DRAM Technologies in Embedded MPSoCs, ” Proceedings of 33rd IEEE Intl Conf on ComputerDesign (I… [cited by applicant]
He, Kaiming, Zhang, Xiangyu, Ren, Shaoqing, and Sun, Jian, “Delving deep into rectifiers: Surpassing human-level Performance on imagenet classification,” arXiv preprint arXiv: 1502.01852, 2015, pp. 1026-1034. [cited by applicant]
Invitation to Pay Additional Fees for Commonly Owned International Patent Application PCT/US2018/056559, dated Feb. 7, 2019, 15 pages, International Searching Authority (EPO). [cited by applicant]
Invitation to Pay Additional Fees for Commonly Owned International Patent Application PCT/US2018/056565, dated Feb. 12, 2019, 13 pages, International Searching Authority (EPO). [cited by applicant]
Kim, Jung-Sik, et al., “A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4x128 I/Os Using TSV Based Stacking,” IEEE Journal of Solid-State Circuits, Jan. 2012, 10 pages, vol. 47, No. 1, IEEE. [cited by applicant]
Loh et al., “Processor Design in 3D Die-Stacking Technologies,” IEEE Micro, May/Jun. 2007, 18 pages, mi. 27, Issue 3, IEEE Computer Society. [cited by applicant]
Nair, Vinod and Hinton, Geoffrey E., “Rectified linear units improve restricted Boltzmann machines,” ICML, pp. 307-814, 2010. [cited by applicant]
Nakamoto, et al., “Simulation Methodology and Flow Integration for 3D IC Stress Management,” 2010 IEEE Custom Integrated Circuits Conference, Sep. 19-22, 2010, 4 pages, IEEE, San Jose, CA, USA. [cited by applicant]
Non-Published Commonly Owned Related U.S. Appl. No. 16/827,467, filed Mar. 23, 2020, 74 pages, Xcelsis Corporation. [cited by applicant]
Non-Published Commonly Owned Related U.S. Appl. No. 16/806,854, filed Mar. 2, 2020, 75 pages, Xcelsis Corporation. [cited by applicant]
Non-Published Commonly Owned Related U.S. Appl. No. 16/889,698, filed Jun. 1, 2020, 74 pages, Xcelsis Corporation. [cited by applicant]
Non-Published Commonly Owned Related U.S. Appl. No. 16/891,027, filed Jun. 2, 2020, 47 ages, Xcelsis Corporation. [cited by applicant]
Non-Published Commonly Owned U.S. Appl. No. 16/806,934, filed Mar. 2, 2020, 74 pages, Xcelsis Corporation. [cited by applicant]
PCT Intemational Search Report and Written Opinion of Commonly Owned International Patent Application PCT/US2018/056559, dated Mar. 29, 2019, 17 pages, International Searching Authority (European Patent Office). [cited by applicant]
PCT International Search Report and Written Opinion of Commonly Owned International Patent Application PCT/US2018/056565, mailed Apr. 2, 2019, 17 pages, International Searching Authority (European Patent Office). [cited by applicant]
Tran, Kevin, et al., “Start Your HBM/2.5D Design Today,” High-Bandwidth Memory White Paper, Mar. 29, 2016, 6 pages, Amkor Technology, Inc., San Jose, CA, USA. [cited by applicant]
Wu, Xiaoxia, et al., “Electrical Characterization for Intertier Connections and Timing Analysis for 3-D ICs,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Dec. 6, 2010, 5 pages, IEEE. [cited by applicant]
“Sony IMX260 12 MP”, “Sony IMX260 12 MP,” TechInsights, https://www.techinsights.com/products/ipr-1603-802 (Accessed Feb. 10, 2023). [cited by applicant]
“Sony IX260 in Samsung Galaxy S7: Stacked or Not?”, “Sony IX260 in Samsung Galaxy S7: Stacked or Not?,” Image Sensors World, http://image-sensors-world.blogspot.com/2016/03/sony-imx260-in-samsung-galaxy-s7.html (2016). [cited by applicant]
Garrou, Phil , “IFTLE 303 Sony Introduces Ziptronix DBI Technology in Samsung Galaxy S7”, Garrow, Phil, “IFTLE 303 Sony Introduces Ziptronix DBI Technology in Samsung Galaxy S7,” http://image-sensors-world.blogspot.com/… [cited by applicant]
Kagawa, Y., et al., “Novel Stacked CMOS Image Sensor with Advanced Cu2Cu Hybrid Bonding”, Kagawa, Y., et al., “Novel Stacked CMOS Image Sensor with Advanced Cu2Cu Hybrid Bonding,” 2016 IEEE, pp. 8.4.1-8.4.4. [cited by applicant]
Yaping Lv, “Research on Multilayer Stack Bonding Technology for System in Package”, (Huazhong University of Science & Technology, Wuhan, Hubei 430074, P. R. China), (Jan., 2014). [cited by applicant]