Double-sided thermoelectric devices with insulators
The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.
1. A thermoelectric apparatus, the apparatus comprising:
a thermoelement base comprising:
a thermally and electrically non-conductive substrate having a first surface and a second surface;
a tunnel between the first surface and the second surface, where the tunnel has a first opening in the first surface and a second opening in the second surface;
a first gold layer proximate to the second surface;
a nickel layer adjacent to the first gold layer; and
a second gold layer adjacent to the nickel layer;
a barrier layer disposed within the tunnel proximate to the first surface;
a thermoelectric layer disposed within the tunnel adjacent to the barrier layer, wherein the thermoelectric layer conforms to a shape of the barrier layer, the tunnel, and the second surface;
a metal layer disposed within the tunnel adjacent to the thermoelectric layer, wherein the thermoelectric layer conforms to the shape of the barrier layer, the tunnel, and the second surface; and
a cap layer disposed within the tunnel adjacent to the metal layer and proximate to the second surface.
2. The apparatus of claim 1 , wherein the thermally and electrically non-conductive substrate is made of one of: a polyimide, a liquid crystal polymer (LCP), parylene, PTFE, polymer aerogels, and a glass.
3. The apparatus of claim 1 , wherein the thermally and electrically non-conductive substrate is between about 10 micrometers to about 1000 micrometers thick; the first gold layer is about 400 nanometers thick; the nickel layer is about 5 micrometers thick; and the second gold layer is about 1 micrometer thick.
4. The apparatus of claim 1 , wherein the thermoelectric layer is made of a thermoelectric material comprising one of:
an n-type thermoelectric material; and
a p-type thermoelectric material.
5. The apparatus of claim 4 , wherein
the n-type thermoelectric material is made of one or more of: Bi—Te—Se, SiGe—P, Mg 3 Bi 2 , Mg—Sb—B—Te, InSb, BiSb, PbSe, SnSSe, Half-Heusler alloys, full Heusler alloys, Fe—V—W—Al, Yb—Ba—Co—Sb, La—Te, Pr—Te, SiGe—C, and YbAl; and
the p-type thermoelectric material is made of one or more of: BiSb—Te, SiGe—B, Zintl compounds, Yb—Mn—Sb, Ce—Fe—Co—Sb, CePd, CsBiTe, PbTe, and ZnSb.
6. The apparatus of claim 4 , wherein the thermoelectric layer further comprises: at least one interlayer that alternates with the n-type thermoelectric material or the p-type thermoelectric material, the at least one interlayer comprising one of: TiW, gold, iridium, platinum, tungsten, molybdenum, and InSb.
7. The apparatus of claim 1 , wherein the barrier layer is about 5 micrometers thick.
8. The apparatus of claim 1 , wherein the barrier layer comprises one or more of: rhodium, platinum, iridium, tantalum and tantalum nitride, titanium and titanium nitride, chromium, and cobalt.
9. The apparatus of claim 1 , wherein the metal layer is made of platinum.
10. The apparatus of claim 1 , wherein the metal layer comprises:
a first sublayer made of one of: platinum, nickel, TiW, Ta—TaN, titanium, cobalt, iridium, and rhodium;
a second sublayer made of one of: platinum, cobalt, and nickel; and
a third sublayer made of one of: platinum, gold, and silver;
wherein the first sublayer is disposed adjacent to the thermoelectric layer and the second sublayer is disposed between the first sublayer and the third sublayer.
11. The apparatus of claim 1 , wherein the cap layer comprises one of: sintered nano-silver and solder.
12. The apparatus of claim 1 , further comprising:
an adhesion layer disposed between the first surface of the substrate and the first gold layer.
13. The apparatus of claim 1 , further comprising:
an energy filter layer disposed between the barrier layer and the thermoelectric layer.
14. The apparatus of claim 1 , wherein the energy filter layer is made of graphene.