Granted Patent B2

US 12,740,399 · App. 18/396,901 · Granted Sep 15, 2026

Inventors: Min Gyu Sung (Latham, NY); Tao Li (Slingerlands, NY); Ruilong Xie (Niskayuna, NY); Chih-Chao Yang (Glenmont, NY)

Assignee: International Business Machines Corporation

H10W20/435H10D62/151H10W72/00

Abstract

Claims (43)

1 . A semiconductor structure comprising a first interconnect on one side and a second interconnect on an opposing side separated from the first interconnect by a longitudinal thickness of an insulating member that extends laterally along the first interconnect and the second interconnect, the semiconductor structure comprising:

a first source/drain (S/D) positioned in the insulating member between the first interconnect and the second interconnect;

a second S/D positioned in the insulating member adjacent to the first S/D; and

a first lead electrically connected to the first S/D and to the second interconnect and electrically insulated from the second S/D, wherein,

a first lateral end of the first lead is angled inwards towards the first S/D at a first acute angle relative to a lateral direction; and

a second lateral end of the first lead is angled away from the first S/D at a second acute angle relative to the lateral direction.

2 . The semiconductor structure of claim 1 , wherein the first acute angle is different from the second acute angle.

3 . The semiconductor structure of claim 1 , wherein a portion of the first lead laps the first S/D and the second S/D laterally.

4 . The semiconductor structure of claim 1 , wherein the second S/D is electrically connected to the first interconnect.

5 . The semiconductor structure of claim 1 , further comprising an epitaxial placeholder in direct contact with the second S/D on a side of the second S/D that is closest to the first lead.

6 . The semiconductor structure of claim 5 , wherein the epitaxial placeholder is in contact with a dielectric cap.

7 . The semiconductor structure of claim 6 , wherein the dielectric cap is in contact with the first lead.

8 . The semiconductor structure of claim 1 , further comprising:

a third S/D positioned in the insulating member adjacent to the second S/D on an opposite side from the first S/D; and

a second lead electrically connected to the third S/D and to the second interconnect and electrically insulated from the second S/D and the first lead, wherein,

a third lateral end of the second lead is angled inwards towards the third S/D at a third acute angle relative to the lateral direction; and

a fourth lateral end of the second lead is angled away from the third S/D at a fourth acute angle relative to the lateral direction.

9 . The semiconductor structure of claim 8 , wherein the first acute angle and the second acute angle are oriented opposite to the third acute angle and the fourth acute angle.

10 . The semiconductor structure of claim 1 , wherein,

the insulating member comprises a plurality of insulators; and

an insulator of the plurality of insulators positioned between the first lead and the second lead to electrically insulate the first lead from the second lead.

11 . A semiconductor structure comprising a first interconnect on one side and a second interconnect on an opposing side separated from the first interconnect by a longitudinal thickness of an insulating member that extends laterally along the first interconnect and the second interconnect, the semiconductor structure comprising:

a first source/drain (S/D) positioned in the insulating member between the first interconnect and the second interconnect, wherein the insulating member comprises a plurality of insulators;

a second S/D positioned in the insulating member adjacent to the first S/D;

a third S/D positioned in the insulating member adjacent to the second S/D on the opposite side from the first S/D;

a first lead electrically connected to the first S/D and to the second interconnect and electrically insulated from the second S/D;

a second lead electrically connected to the third S/D and to the second interconnect and electrically insulated from the second S/D; and

an insulator of the plurality of insulators positioned between the first lead and the second lead to electrically insulate the first lead from the second lead;

wherein,

a first lateral end of the first lead is angled inwards towards the first S/D at a first acute angle relative to a lateral direction; and

a second lateral end of the first lead is in contact with the insulator and is angled towards the third S/D at a second acute angle relative to the lateral direction.

12 . The semiconductor structure of claim 11 , wherein the first acute angle is different from the second acute angle.

13 . The semiconductor structure of claim 11 , wherein,

a third lateral end of the second lead is angled inwards towards the third S/D at a third acute angle; and

a fourth lateral end of the second lead is in contact with the insulator and is angled towards the second S/D at a fourth acute angle.

14 . The semiconductor structure of claim 13 , wherein the first acute angle and the fourth acute angle have approximately a same value and an opposite orientation.

15 . The semiconductor structure of claim 13 , wherein the second acute angle and the third acute angle have approximately a same value and an opposite orientation.

16 . The semiconductor structure of claim 11 , further comprising an epitaxial placeholder in direct contact with the second S/D on a side of the second S/D that is closest to the first lead, wherein:

the epitaxial placeholder is in contact with a dielectric cap; and

the dielectric cap is in contact with the first lead.

17 . The semiconductor structure of claim 11 , wherein a portion of the first lead laps the first S/D and the second S/D laterally.

18 . The semiconductor structure of claim 11 , wherein the second S/D is electrically connected to the first interconnect.

19 . The semiconductor structure of claim 11 , wherein no portion of the second lead laps the second S/D laterally.

Assignments (1)

Continuity (1)

References Cited (36)