Ion beam target assemblies for neutron generation
Provided herein are systems, devices, articles of manufacture, and methods for generating neutrons employing a high energy ion beam target (HEIB target) and a target backing configured to be in contact with the bottom surface of the HEIR target (e.g., to generate an ion beam target assembly). In certain embodiments, the HEIB target has a thickness that is less than the penetration depth of protons or deuterons in the high energy ion beam that strikes the target. In certain embodiments, the target backing comprises a high hydrogen diffusion metal (e.g., palladium), has open spaces dispersed throughout for reduced proton diffusion distances, and has a shape and thickness such that all, or virtually all, of the protons or deuterons that pass through the HEIR target are stopped. Also provided herein are systems, devices, and methods for changing targets in an ion beam accelerator system.
1. A system comprising:
an ion source configured to produce an ion beam;
an accelerator operatively coupled to the ion source and configured to receive the ion beam and accelerate the ion beam to generate an accelerated ion beam;
a target chamber configured to receive the accelerated ion beam;
a plurality of targets, wherein each the plurality of targets generates neutrons when struck with the accelerated ion beam in the target chamber; and
a target changing mechanism, wherein the target changing mechanism is configured to:
i) hold the plurality of targets;
ii) hold one of the plurality of targets in a first position that is inside the target chamber and is in the path of the accelerated ion beam, while holding the remaining targets outside the target chamber, and
ii) move the target in the first position to a position outside the target chamber, and move one of the remaining targets into the first position inside the target chamber;
wherein at least one of the plurality of targets, when not in the first position, are in a position outside the chamber that allows any accumulated radiation to substantially or fully dissipate.
2. The system of claim 1 , wherein at least one of the plurality of targets, when not in the first position, can be removed from the system without stopping or disrupting the operation of the accelerated ion beam.
3. The system of claim 1 , wherein the target changing mechanism comprises a carousel, turret, or magazine.
4. The system of claim 1 , wherein at least one of the plurality of targets, when not in the first position, is automatically deposited into a radiation container.
5. The system of claim 1 , wherein target changing mechanism is further configured to allow one or more additional targets to be added and held by the target changing mechanism without stopping or disrupting the operation of the accelerated ion beam.
6. The system of claim 1 , wherein the plurality of targets includes a first target, and the first target includes a metal selected from the group consisting of beryllium, uranium, lithium, tungsten, and tantalum.
7. The system of claim 6 , wherein the metal has a thickness in a range of from 2 mm to 25 mm, and a diameter in a range of from 25 mm to 150 mm.
8. The system of claim 6 , wherein the first target further includes a backing coupled to the metal, wherein the backing has a plurality of open spaces.
9. The system of claim 8 , wherein the plurality of open spaces is gas or vacuum filled.
10. The system of claim 8 , wherein the plurality of open spaces are selected from: pores, grooves, holes, corrugations, channels, open cells, honeycomb cells, irregular openings, or any combination thereof.
11. The system of claim 8 , wherein the backing is selected from the group consisting of palladium, titanium, vanadium, niobium, and zirconium.
12. The system of claim 11 , wherein a thickness of the backing is in a range of from 2 mm to 10 mm.
13. The system of claim 8 , wherein the backing comprises a core of vanadium that is coated with a film of palladium.
14. The system of claim 8 , wherein the first target further includes a substrate coupled to the backing; wherein the backing is positioned between the metal and the substrate.
15. The system of claim 14 , wherein the substrate comprises cooper, aluminum, or a combination thereof.
16. The system of claim 1 , wherein the ion beam includes protons or deuterons with an energy of 2 MeV or greater.
17. The system of claim 1 , wherein at least one of the plurality of targets, the target holding mechanism, or the target chamber includes aluminum, vanadium, aluminum bronzes, aluminum-based brazes, or any combination thereof.
18. The system of claim 1 , wherein the target holding mechanism and the target chamber are composed of aluminum, vanadium, aluminum bronzes, aluminum-based brazes, or any combination thereof.