Device for electrostatic discharge protection using silicon controlled rectifier
A device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.
1 . A device comprising:
a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate;
a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and
a back diode forwardly connected from the second node to the first gate,
wherein the back diode is directly connected to the first gate.
2 . The device of claim 1 , wherein the device comprises:
a p-type substrate in which the first silicon controlled rectifier, the second silicon controlled rectifier, and the back diode are disposed; and
wherein the back diode comprises an n+ region connected to the p-type substrate.
3 . The device of claim 1 , wherein the first silicon controlled rectifier comprises:
a first PNP bipolar transistor, wherein an emitter of the first PNP bipolar transistor is connected to the first anode, and a collector of the first PNP bipolar transistor is connected to the first gate; and
a first NPN bipolar transistor, wherein a collector of the first NPN bipolar transistor is connected to a base of the first PNP bipolar transistor, an emitter of the first NPN bipolar transistor is connected to the first cathode, and a base of the first NPN bipolar transistor is connected to the first gate, and
wherein the device further comprises at least one first trigger diode forwardly connected from the base of the first PNP bipolar transistor to the pad.
4 . The device of claim 3 , further comprising a first resistor connected between the first node and the base of the first PNP bipolar transistor.
5 . The device of claim 4 , wherein the first resistor comprises an n-well resistor.
6 . The device of claim 4 , wherein the first resistor comprises a resistor disposed in a wiring layer.
7 . The device of claim 1 , wherein the second silicon controlled rectifier comprises:
a second PNP bipolar transistor, wherein an emitter of the second PNP bipolar transistor is connected to the pad, and a collector of the second PNP bipolar transistor is connected to the second node; and
a second NPN bipolar transistor, wherein a collector of the second NPN bipolar transistor is connected to a base of the second PNP bipolar transistor, an emitter of the second NPN bipolar transistor is connected to the second cathode, and a base of the second NPN bipolar transistor is connected to the second gate, and
wherein the device further comprises at least one second trigger diode forwardly connected from the base of the second PNP bipolar transistor to the second node.
8 . The device of claim 1 , further comprising a second resistor connected between the second gate of the second silicon controlled rectifier and the second node.
9 . The device of claim 8 , wherein the second resistor comprises a p-well resistor.
10 . The device of claim 8 , wherein the second resistor comprises a resistor disposed in a wiring layer.
11 . The device of claim 1 , further comprising a first reverse diode forwardly connected from the pad to the first node.
12 . The device of claim 1 , further comprising a second reverse diode forwardly connected from the second node to the pad.
13 . The device of claim 1 , wherein the first node is configured to receive a positive supply voltage, and
wherein the second node is configured to receive a negative supply voltage.
14 . A device comprising:
a first silicon controlled rectifier comprising a first p-well and a first n-well consecutively disposed in a substrate, a first n+ region disposed in the first p-well, and a first p+ region disposed in the first n-well, wherein the first p+ region is electrically connected to a first node;
a second silicon controlled rectifier comprising a second n-well and a second p-well consecutively disposed in the substrate, a second p+ region disposed in the second n-well, and a second n+ region disposed in the second p-well, wherein the second n+ region is electrically connected to a second node; and
a back diode comprising a third n+ region disposed in the substrate between the first silicon controlled rectifier and the second silicon controlled rectifier, wherein the third n+ region is electrically connected to the first p-well,
wherein the first n+ region and the second p+ region are electrically connected to a pad.
15 . The device of claim 14 , wherein the first node is configured to receive a positive supply voltage, and
wherein the second node is configured to receive a negative supply voltage.
16 . The device of claim 14 , further comprising a first trigger diode comprising a third n-well and a third p+ region disposed in the third n-well,
wherein the third n-well is electrically connected to the pad, and
wherein the third p+ region is electrically connected to the first n-well.
17 . The device of claim 14 , further comprising a second trigger diode comprising a fourth n-well and a fourth p+ region disposed in the fourth n-well,
wherein the fourth n-well is electrically connected to the second node, and
wherein the fourth p+ region is electrically connected to the second n-well.
18 . The device of claim 14 , wherein the first p-well and the first n-well are disposed in a first deep n-well in the substrate, and
wherein the second n-well and the second p-well are disposed in a second deep n-well in the substrate.
19 . A device comprising:
a first PNP bipolar transistor and a first NPN bipolar transistor, wherein a base of the first NPN bipolar transistor is connected to a collector of the first PNP bipolar transistor, and wherein a collector of the first NPN bipolar transistor is connected to a base of the first PNP bipolar transistor; and
a second PNP bipolar transistor and a second NPN bipolar transistor, wherein a base of the second NPN bipolar transistor is connected to a collector of the second PNP bipolar transistor, and wherein a collector of the second NPN bipolar transistor is connected to a base of the second PNP bipolar transistor,
wherein an emitter of the first PNP bipolar transistor is connected to a first node,
wherein an emitter of the first NPN bipolar transistor and an emitter of the second PNP bipolar transistor are connected to a pad,
wherein an emitter of the second NPN bipolar transistor is connected to a second node, and
wherein the device further comprises a back diode forwardly connected from the second node to the base of the first NPN bipolar transistor,
wherein the back diode is directly connected to the base of the first NPN bipolar transistor.
20 . The device of claim 19 , further comprising:
at least one first trigger diode forwardly connected from the base of the first PNP bipolar transistor to the pad; and
at least one second trigger diode forwardly connected from the base of the second PNP bipolar transistor to the second node.