Storage device and operating method thereof
A storage device includes a first non-volatile memory device storing a data; a first selector connected to the first non-volatile memory device; a plurality of channels connected to the first selector; and a memory controller connected to the plurality of channels, transmitting a command for sensing a state of a channel to the plurality of channels in order to transmit the data to the first non-volatile memory device, receiving a channel state signal indicating whether each channel is in an idle state or not from the plurality of channels as a response to the command, selecting a first channel among the plurality of channels based on the channel state signal, and outputting a channel selection signal including an information of the first channel to the first selector so that the first selector connects the first channel and the first non-volatile memory device.
1 . A storage device comprising:
a memory controller configured to control age device;
a plurality of channels connected to the memory controller;
non-volatile memory devices configured to store data, the non-volatile memory devices including a first non-volatile memory device; and
selectors each connected to a respective one of the non-volatile memory devices, the selectors including a first selector connected between the first non-volatile memory device and the plurality of channels;
wherein each of the plurality of channels is configured to connect the memory controller to a respective ones of the selectors independent of other ones of the selectors without interference of the other ones of the selectors, the memory controller is configured to
transmit a command for sensing a state of a channel to the plurality of channels in order to transmit the data to the first non-volatile memory device,
receive a channel state signal indicating whether each channel is in an idle state or not from the plurality of channels as a response to the command,
select a first channel among the plurality of channels based on the channel state signal, and
output a channel selection signal including an information of the first channel to the first selector so that the first selector connects the first channel and the first non-volatile memory device, and
wherein the first channel is in the idle state.
2 . The storage device of claim 1 , wherein:
the first selector, upon receiving the channel selection signal from the memory controller, is configured to receive a signal corresponding to the data from the first channel and transmit the signal to the first non-volatile memory device.
3 . The storage device of claim 1 , further comprising:
a second non-volatile memory device of the non-volatile memory devices fixed and connected to the first channel.
4 . The storage device of claim 1 , wherein:
the storage device further includes
a second non-volatile memory device of the non-volatile memory devices configured to store data,
a second selector of the selectors connected between the second non-volatile memory device and the plurality of channels,
the memory controller is configured to schedule a transmission order of the data to be transmitted to the first non-volatile memory device and the second non-volatile memory device based on a scheduling scheme.
5 . The storage device of claim 4 , wherein:
the scheduling scheme is configured to determine the transmission order of the data to be transmitted to the first non-volatile memory device and the second non-volatile memory device based on whether the first non-volatile memory device and the second non-volatile memory device are in a busy state in which internal operations are performed or in a ready state in which the internal operations are completed.
6 . The storage device of claim 1 , wherein:
the memory controller is further configured to output a workload signal indicating a pattern of a workload of the memory controller.
7 . The storage device of claim 6 , wherein:
the first selector is further configured to
receive the workload signal, and
change a connection mode of the plurality of channels and the first non-volatile memory device based on the workload signal.
8 . A memory device comprising:
a plurality of channels;
a plurality of non-volatile memory devices; and
selectors including a first selector connected between a first non-volatile memory device-among the plurality of non-volatile memory devices and the plurality of channels, the first selector configured to receive a first signal from an external memory controller, and connect a first channel among the plurality of channels and the first non-volatile memory device based on the first signal,
each of the plurality of channels configured to communicate with each of the plurality of non-volatile memory devices independent of other ones of the plurality of channels without interference of the other ones of the selectors, and
wherein the first signal is a signal indicating the first channel being in an idle state among the plurality of channels.
9 . The memory device of claim 8 , further comprising:
a second selector of the selectors connected between a second non-volatile memory device corresponding among the plurality of non-volatile memory devices and the plurality of channels, the second selector configured to receive a second signal from an outside, and connect a second channel among the plurality of channels and the second non-volatile memory device based on the second signal.
10 . The memory device of claim 9 , wherein:
the first selector is configured to connect the first channel among the plurality of channels and the first non-volatile memory device based on the first signal, receive a first command from the first channel to be transmitted to the first non-volatile memory device, and transmit a first data output from the first non-volatile memory device by corresponding to the first command, and
the second selector is configured to connect the second channel among the plurality of channels and the second non-volatile memory device based on the second signal, receive a second command from the second channel to be transmitted to the second non-volatile memory device, and while the first data is transmitted from the first non-volatile memory device to the first channel, transmit a second data output from the second non-volatile memory device to the second channel by corresponding to the second command.
11 . The memory device of claim 10 , wherein:
the first selector is configured to receive a third signal from the outside and connect a third channel among the plurality of channels and the first non-volatile memory device based on the third signal.
12 . The memory device of claim 11 , wherein:
after the first data is transferred from the first non-volatile memory device to the first channel, while the second data is transferred from the second non-volatile memory device to the second channel, the first selector is configured to connect the third channel among the plurality of channels and the first non-volatile memory device based on the third signal, receive a third command from the third channel to be transmitted to the first non-volatile memory device, and transmit a third data output from the first non-volatile memory device to the third channel by corresponding to the third command.
13 . The memory device of claim 8 , wherein:
a second non-volatile memory device among the plurality of non-volatile memory devices is fixedly connected to a second channel among the plurality of channels.
14 . The memory device of claim 8 , wherein:
the first non-volatile memory device includes
a first plurality of pins connected to the first selector and configured to receive data from the first selector; and
a second plurality of pins connected to a second channel among the plurality of channels and configured to receive data from the second channel.
15 . The memory device of claim 14 , wherein:
a second non-volatile memory device among the plurality of non-volatile memory devices further includes
a third plurality of pins connected to a second selector corresponding to the second non-volatile memory device and configured to receive data from the second selector, and
a fourth plurality of pins connected to the second channel among the plurality of channels and configured to receive data from the second channel.
16 . The memory device of claim 8 , wherein:
the first signal is a signal instructing a pattern of a first workload among a plurality of workload patterns.
17 . An operating method of a storage device comprising:
determining, by a memory controller, to transmit & data to a first non-volatile memory device among a plurality of non-volatile memory devices based on a scheduling scheme;
for transmitting the data to the first non-volatile memory device, selecting a channel through which the data is transmitted among a plurality of channels connected to the memory controller, and outputting a channel selection signal including an information of the selected channel; and
receiving the channel selection signal by a first selector among a plurality of selectors connected between the first non-volatile memory device and the plurality of channels, and connecting the channel corresponding to the channel selection signal and the first non-volatile memory device based on the channel selection signal independent of other ones of the plurality of selectors without interference of the other ones of the plurality of selectors, wherein: the channel is in an idle state.
18 . The operating method of the storage device of claim 17 , wherein the selecting of the channel through which the data is transmitted among the plurality of channels includes:
transmitting, by the memory controller, a command for sensing a state of the channel to at least one channel among the plurality of channels; and
receiving a channel state signal indicating whether each channel is in an idle state or not from at least one channel among the plurality of channels as a response to the command.