Methods of manufacturing semiconductor chip including crack propagation guide
There may be presented a method of manufacturing a semiconductor chip. A first layer stack in which first material layers and second material layers are alternately stacked is formed over a semiconductor substrate including a chip region and a scribe lane region, and first crack propagation guides are formed on the first layer stack. A second layer stack is formed on the first layer stack and the first crack propagation guides, and second crack propagation guides are formed. A semiconductor chip is separated from the semiconductor substrate.
1. A semiconductor device comprising;
a first layer stack including alternately stacked first material layers and second material layers over a semiconductor substrate;
first crack propagation guides filling trenches, the trenches substantially penetrating the first layer stack;
a second layer stack including alternately stacked third material layers and fourth material layers on the first layer stack and the first crack propagation guides; and
second crack propagation guides filling openings, the openings substantially penetrating the second layer stack,
wherein the semiconductor substrate includes a chip region and the scribe lane region,
wherein cracks generated in a portion of the scribe lane region of the semiconductor substrate; and
wherein the cracks propagate to separate a semiconductor chip with the chip region from the semiconductor substrate.
2. The semiconductor device of claim 1 , wherein the first and second crack propagation guides induce propagation directions of the cracks to be substantially perpendicular to the semiconductor substrate.
3. The semiconductor device of claim 1 , wherein a plurality of first crack propagation guides are arranged side by side in the scribe lane region of the semiconductor substrate.
4. The semiconductor device of claim 1 , wherein a plurality of the second crack propagation guides are overlapped with one of the first crack propagation guides.
5. The semiconductor device of claim 1 , wherein the first crack propagation guides include line patterns that are elongated across the scribe lane region of the semiconductor substrate.
6. The semiconductor device of claim 1 , wherein the openings are formed to expose portions of the first crack propagation guides.
7. The semiconductor device of claim 1 , wherein each of the openings has a through-hole shape.
8. The semiconductor device of claim 1 , wherein the first material layer includes silicon oxide, and
wherein the second material layer includes silicon nitride.
9. The semiconductor device of claim 1 , wherein the third material layer includes silicon oxide, and
wherein the fourth material layer includes silicon nitride.
10. The semiconductor device of claim 1 , wherein the first and third material layers include the same insulating material,
wherein the second and fourth material layers include the same insulating material, and
wherein the first and second material layers include different insulating materials.
11. The semiconductor device of claim 1 , wherein each of the first crack propagation guides includes an insulating material.
12. The semiconductor device of claim 1 , wherein each of the first crack propagation guides includes silicon oxide.
13. The semiconductor device of claim 1 , wherein each of the second crack propagation guides includes an insulating material.
14. The semiconductor device of claim 1 , further comprising:
an insulating layer covering the second crack propagation guides and the second layer stack;
a test pattern on the insulating layer; and
a passivation layer covering the test pattern.
15. A semiconductor device comprising:
a first layer stack including alternately stacking first material layers and second material layers over a semiconductor substrate, the semiconductor substrate including a chip region and a scribe lane region;
first crack propagation guides filling first trenches, the first trenches overlap with the scribe lane region and substantially penetrating the first layer stack;
insulating patterns filling second trenches, the second trenches overlap with the chip region and substantially penetrating the first layer stack;
a second layer stack including alternately stacking third material layers and fourth material layers on the first layer stack;
second crack propagation guides filling first openings, the first openings overlap with the scribe lane region and substantially penetrating the second layer stack; and
supporters filling second openings, the second openings overlap with the chip region and substantially penetrating the second layer stack.
16. The semiconductor device of claim 15 , wherein each of the supporters and second crack propagation guides includes an insulating material.
17. The semiconductor device of claim 15 , wherein the second openings and the supporters overlap with some portions of the insulating pattern.
18. The semiconductor device of claim 15 , further comprising:
a channel hole that substantially penetrates the first and second layer stacks and overlaps with the chip region; and
a memory layer, a channel layer, and a filler formed on a sidewall of the channel hole.
19. The semiconductor device of claim 18 ,
wherein the memory layer includes a tunnel layer, a charge trap layer, and a charge blocking layer,
wherein the channel layer includes a semiconductor material, and
wherein the filler includes an insulating material.
20. The semiconductor device of claim 15 , wherein a plurality of second crack propagation guides overlap with one of the first crack propagation guides.
21. The semiconductor device of claim 15 , wherein a plurality of first crack propagation guides are arranged side by side in the scribe lane region of the semiconductor substrate.
22. The semiconductor device of claim 15 , wherein the first crack propagation guides include line patterns that are elongated across the scribe lane region of the semiconductor substrate.
23. The semiconductor device of claim 15 , wherein the first openings are formed to expose portions of the first crack propagation guides.
24. The semiconductor device of claim 15 , wherein each of the first openings has a through-hole shape.
25. The semiconductor device of claim 15 , wherein the first material layer includes silicon oxide, and wherein the second material layer includes silicon nitride.
26. The semiconductor device of claim 15 , wherein the third material layer includes silicon oxide, and
wherein the fourth material layer includes silicon nitride.
27. The semiconductor device of claim 15 , wherein the first and third material layers include the same insulating material,
wherein the second and fourth material layers include the same insulating material, and wherein the first and second material layers include different insulating materials.
28. The semiconductor device of claim 15 , wherein the first crack propagation guides include silicon oxide.
29. The semiconductor device of claim 15 , further comprising:
an insulating layer covering the second crack propagation guides and the second layer stack;
a conductive pattern and a test pattern on the insulating layer; and
a passivation layer covering the conductive pattern and the test pattern.