Techniques for forming a deep trench isolation structure between photodiodes by forming a first set of trenches based on a first pattern and forming a second set of trenches based on a second pattern
Double patterning techniques described herein may reduce corner rounding, etch loading, and/or other defects that might otherwise arise during formation of a deep trench isolation (DTI) structure in a pixel array. The double patterning techniques include forming a first set of trenches in a first direction and forming a second set of trenches in a second direction in a plurality of patterning operations such that minimal to no etch loading and/or corner rounding is present at and/or near the intersections of the first set of trenches and the second set of trenches.
1. A method, comprising:
forming a hard mask layer over an oxide layer, wherein the oxide layer is over a removable dielectric layer that is over a substrate;
forming a first portion of a pattern in a first direction in the hard mask layer based on removing one or more portions of the hard mask layer up to the oxide layer;
forming, subsequent to forming the first portion of the pattern, a second portion of the pattern in a second direction in the hard mask layer based on removing one or more other portions of the hard mask layer up to the oxide layer;
etching, based on the first portion of the pattern and the second portion of the pattern, the oxide layer, the removable dielectric layer, and the substrate to form a plurality of intersecting trenches in the substrate; and
filling the plurality of intersecting trenches to form a deep trench isolation (DTI) structure in the substrate.
2. The method of claim 1 , wherein the DTI structure is included in a pixel array.
3. The method of claim 2 , further comprising:
forming photodiodes for pixel sensors of the pixel array;
wherein forming the plurality of intersecting trenches comprises:
forming the plurality of intersecting trenches in between the photodiodes.
4. The method of claim 1 , wherein a ratio between a depth of the DTI structure and a width of the DTI structure is in a range of approximately 20 to approximately 50.
5. The method of claim 1 , wherein forming the first portion of the pattern comprises:
forming a first photoresist layer over the hard mask layer;
forming a first photoresist pattern in the first photoresist layer;
performing, based on the first photoresist pattern, a first etch operation to form the first portion of the pattern in the hard mask layer; and
removing the first photoresist layer.
6. The method of claim 5 , wherein forming the second portion of the pattern comprises:
forming a second photoresist layer over the hard mask layer after removing the first photoresist layer;
forming a second photoresist pattern in the second photoresist layer;
performing, based on the second photoresist pattern, a second etch operation to form the second portion of the pattern in the hard mask layer; and
removing the second photoresist layer.
7. The method of claim 6 , wherein performing the first etch operation comprises:
etching through the first photoresist layer to a first antireflective coating (ARC) over the hard mask layer; and
wherein performing the second etch operation comprises:
etching through the second photoresist layer to a second ARC over the hard mask layer.
8. The method of claim 1 , wherein etching the substrate to form the plurality of intersecting trenches in the substrate comprises:
etching through the removable dielectric layer and into at least a portion of the substrate to form the plurality of intersecting trenches in the substrate.
9. The method of claim 8 , further comprising:
removing the hard mask layer and the removable dielectric layer after etching through the removable dielectric layer and into at least the portion of the substrate to form the plurality of intersecting trenches; and
wherein filling the plurality of intersecting trenches to form the DTI structure in the substrate comprises:
filling the plurality of intersecting trenches to form the DTI structure in the substrate after removing the hard mask layer and the removable dielectric layer.
10. A method, comprising:
forming photodiodes for pixel sensors of a pixel array over a substrate;
forming a hard mask layer over an oxide layer, wherein the oxide layer is over a removable dielectric layer that is over the substrate;
forming a first pattern in the hard mask layer based on removing one or more portions of the hard mask layer up to the oxide layer;
forming, subsequent to forming the first pattern, a second pattern in the hard mask layer over the substrate based on removing one or more other portions of the hard mask layer up to the oxide layer;
removing, based on the first pattern and the second pattern, one or more portions of the oxide layer, the removable dielectric layer, and the substrate to form a first set of trenches in a first direction within the substrate and a second set of trenches in a second direction within the substrate; and
forming a deep trench isolation (DTI) structure of the pixel array in the first set of trenches and the second set of trenches.
11. The method of claim 10 , wherein the first pattern is formed using a first photoresist layer over the substrate, and wherein the second pattern is formed using a second photoresist layer that is formed over the substrate after removing the first photoresist layer.
12. The method of claim 10 , wherein the first set of trenches and the second set of trenches are formed in between the photodiodes.
13. The method of claim 10 , wherein forming the first pattern comprises:
forming a first photoresist layer over the hard mask layer;
forming the first pattern in the first photoresist layer;
performing, based on the first pattern, a first etch operation to form the first pattern in the hard mask layer; and
removing the first photoresist layer.
14. The method of claim 13 , wherein forming the second pattern comprises:
forming, after forming the first pattern, a second photoresist layer over the hard mask layer;
forming the second pattern in the second photoresist layer;
performing, based on the second pattern, a second etch operation to form the second pattern in the hard mask layer; and
removing the second photoresist layer.
15. A method, comprising:
forming a plurality of photodiodes in a substrate of a pixel array for pixel sensors of the pixel array;
forming a hard mask layer over an oxide layer, wherein the oxide layer is over a removable dielectric layer that is over the substrate;
forming a first portion of a hard mask pattern in the hard mask layer based on a first photoresist pattern and based on removing one or more portions of the hard mask layer up to the oxide layer;
forming a second portion of the hard mask pattern in the hard mask layer based on a second photoresist pattern and based on removing one or more other portions of the hard mask layer up to the oxide layer;
forming a plurality of trenches in the substrate based on the hard mask pattern in the hard mask layer and based on removing portions of the oxide layer, the removable dielectric layer, and the substrate,
wherein trenches of the plurality of trenches are formed in between the plurality of photodiodes;
filling the plurality of trenches to form a deep trench isolation (DTI) structure in the substrate;
forming a dielectric layer over the substrate, over the DTI structure, and over the photodiodes;
forming a metal layer over the dielectric layer;
etching through the metal layer and into a portion of the dielectric layer to form a grid structure;
forming color filter regions for the pixel sensors in between the grid structure; and
forming a micro-lens layer of the pixel array over the grid structure and over the color filter regions.
16. The method of claim 15 , wherein the plurality of trenches includes a first subset of trenches and a second subset of trenches, the first subset of trenches corresponding to the first portion of the hard mask pattern and the second subset of trenches corresponding to the second portion of the hard mask pattern.
17. The method of claim 16 , wherein the first subset of trenches and the second subset of trenches are approximately perpendicular.
18. The method of claim 16 , wherein the first subset of trenches is formed in a first direction and the second subset of trenches is formed in a second direction.
19. The method of claim 16 , wherein the first subset of trenches and the second subset of trenches intersect at a plurality of locations in the substrate.
20. The method of claim 15 , wherein a ratio between a depth of the plurality of trenches and a width of the plurality of trenches is in a range of approximately 20 to approximately 50.