Back-end-of-line passive device structure
A device structure according to the present disclosure includes a passivation layer, a first conductor plate layer disposed on the passivation layer, a second conductor plate layer disposed over the first conductor layer, a third conductor plate layer disposed over the second conductor layer, and a fourth conductor plate layer disposed over the third conductor layer. The second conductor plate layer encloses the first conductor plate layer and the fourth conductor plate layer encloses the third conductor plate layer. The device structure, when used in a back-end-of-line passive device, reduces leakage and breakdown due to corner discharge effect.
1. A device structure, comprising:
a passivation layer;
a first conductor plate layer disposed on the passivation layer;
a first insulator layer over the first conductor plate layer;
a second conductor plate layer disposed over the first insulator layer;
a second insulator layer over the second conductor plate layer;
a third conductor plate layer disposed over the second insulator layer and wrapping over edges of the second conductor plate layer;
a third insulator layer over the third conductor plate layer; and
a fourth conductor plate layer disposed over the third insulator layer,
wherein a vertical projection area of the fourth conductor plate layer falls completely in a vertical projection area of the third conductor plate layer.
2. The device structure of claim 1 , wherein the first insulator layer, the second insulator layer, and the third insulator layer comprise hafnium oxide, hafnium aluminum oxide, hafnium zirconium oxide, zirconium oxide, zirconium aluminum oxide, or a combination thereof.
3. The device structure of claim 1 , wherein the first conductor plate layer, the second conductor plate layer, the third conductor plate layer, and the fourth conductor plate layer comprise titanium nitride or tantalum nitride.
4. The device structure of claim 1 , wherein a vertical projection area of the second conductor plate layer falls completely within a vertical projection area of the first conductor plate layer.
5. The device structure of claim 1 , wherein an area of the first conductor plate layer is different from an area of the third conductor plate layer.
6. The device structure of claim 1 , wherein an area of the first conductor plate layer is greater than an area of the third conductor plate layer.
7. The device structure of claim 1 , wherein an area of the second conductor plate layer is different from an area of the fourth conductor plate layer.
8. The device structure of claim 1 , wherein an area of the second conductor plate layer is greater than an area of the fourth conductor plate layer.
9. The device structure of claim 1 , further comprising:
a fourth insulator layer over the fourth conductor plate layer; and
a fifth conductor plate layer disposed over the fourth insulator layer.
10. The device structure of claim 9 , wherein an area of the fifth conductor plate layer is smaller than an area of the fourth conductor plate layer.
11. The device structure of claim 9 ,
wherein the fourth insulator layer comprises hafnium oxide, hafnium aluminum oxide, hafnium zirconium oxide, zirconium oxide, zirconium aluminum oxide, or a combination thereof,
wherein the fifth conductor plate layer comprises titanium nitride or tantalum nitride.
12. A device structure, comprising:
a passivation layer;
a first conductor plate layer disposed on the passivation layer;
a second conductor plate layer disposed over the first conductor plate layer;
a third conductor plate layer disposed over the second conductor plate layer; and
a fourth conductor plate layer disposed over the third conductor plate layer,
wherein a vertical projection area of an outer edge of the second conductor plate layer falls completely within a vertical projection area of an outer edge of the first conductor plate layer,
wherein a vertical projection area of an outer edge of the fourth conductor plate layer falls completely within a vertical projection area of an outer edge of the third conductor plate layer.
13. The device structure of claim 12 ,
wherein the vertical projection area of the outer edge of the third conductor plate layer falls completely within the vertical projection area of the outer edge of the first conductor plate layer,
wherein the vertical projection area of the outer edge of the fourth conductor plate layer falls completely within the vertical projection area of the outer edge of the second conductor plate layer.
14. The device structure of claim 12 ,
wherein the vertical projection area of the outer edge of the third conductor plate layer substantially aligns with the vertical projection area of the outer edge of the first conductor plate layer,
wherein the vertical projection area of the outer edge of the fourth conductor plate layer substantially aligns with the vertical projection area of the outer edge of the second conductor plate layer.
15. The device structure of claim 12 , wherein the first conductor plate layer, the second conductor plate layer, the third conductor plate layer, and the fourth conductor plate layer comprise titanium nitride or tantalum nitride.
16. The device structure of claim 12 , further comprising:
a first insulator layer disposed between the first conductor plate layer and the second conductor plate layer;
a second insulator layer disposed between the second conductor plate layer and the third conductor plate layer; and
a third insulator layer disposed between the third conductor plate layer and the fourth conductor plate layer.
17. A device structure, comprising:
a first passivation layer;
a first conductor plate layer disposed on the first passivation layer;
a second conductor plate layer disposed over the first conductor plate layer;
a third conductor plate layer disposed over the second conductor plate layer;
a fourth conductor plate layer disposed over the third conductor plate layer;
a second passivation layer disposed over the fourth conductor plate layer;
a first dummy pad, a second dummy pad disposed over the first dummy pad, and a third dummy pad disposed over the second dummy pad; and
a contact via extending through the first passivation layer, the first conductor plate layer, the second conductor plate layer, the third conductor plate layer, the fourth conductor plate layer, and the second passivation layer,
wherein the contact via further extends through the first dummy pad, the second dummy pad and the third dummy pad,
wherein a vertical projection area of an outer edge of the third dummy pad falls completely within a vertical projection area of an outer edge of the second dummy pad,
wherein a vertical projection area of an outer edge of the first dummy pad falls completely within the vertical projection area of the outer edge of the second dummy pad.
18. The device structure of claim 17 ,
wherein a vertical projection area of an outer edge of the second conductor plate layer falls completely within a vertical projection area of an outer edge of the first conductor plate layer,
wherein a vertical projection area of an outer edge of the fourth conductor plate layer falls completely within a vertical projection area of an outer edge of the third conductor plate layer.
19. The device structure of claim 17 , wherein the contact via, the first dummy pad, the second dummy pad, and the third dummy pad are electrically isolated from the first conductor plate layer, the second conductor plate layer, the third conductor plate layer, and the fourth conductor plate layer.
20. The device structure of claim 17 , wherein the first conductor plate layer, the second conductor plate layer, the third conductor plate layer, the fourth conductor plate layer, the first dummy pad, the second dummy pad, and the third dummy pad comprise titanium nitride or tantalum nitride.