IP Library › Granted Patent US 12,489,446
Granted Patent B2
US 12,489,446 · App. 18/454,271 · Granted Dec 2, 2025

Arbiter for non-persistent signals

Inventors: Marco Sautto (Zurich, CH); Danil Sokolov (Swindon, GB); Robert Waterworth (Swindon, GB); Victor Khomenko (Swindon, GB)
Assignee: RENESAS ELECTRONICS AMERICA INC.
H03K19/20H03K3/037
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Quick Facts
Patent No.
US 12,489,446
App. No.
18/454,271
Granted
Dec 2, 2025
Kind
B2
Abstract

Systems and devices for signal arbitration are described. A first asynchronous circuit can receive and sanitize a first non-persistent signal representing a first request to generate a first persistent signal. A second asynchronous circuit can receive and sanitize a second non-persistent signal representing a second request to generate a second persistent signal. A mutual exclusive circuit can arbitrate between the first persistent signal and the second persistent signal and output a grant signal to issue a grant. A control circuit can control an operation mode of the first and second asynchronous circuits based on a control signal, a first grant signal indicating a grant status of the first request, a second grant signal indicating a grant status of the second request, the first persistent signal and the second persistent signal.

Claims (96)

1 . A semiconductor device comprising:

a first asynchronous circuit configured to:

receive a first non-persistent signal representing a first request; and

sanitize the first non-persistent signal to generate a first persistent signal;

a second asynchronous circuit configured to:

receive a second non-persistent signal representing a second request; and

sanitize the second non-persistent signal to generate a second persistent signal;

a mutual exclusive (MUTEX) circuit configured to:

arbitrate between the first persistent signal and the second persistent signal; and

output a grant signal to issue a grant to one of the first request and the second request; and

a control circuit configured to control an operation mode of the first asynchronous circuit and the second asynchronous circuit based on a control signal, a first grant signal indicating a grant status of the first request, a second grant signal indicating a grant status of the second request, the first persistent signal and the second persistent signal, wherein the control circuit comprises:

a NAND gate configured to receive an inverse of the control signal, the first persistent signal and the second persistent signal as inputs;

a C-element configured to receive the control signal and an output of the NAND gate as inputs;

a first two-level logic gate configured to:

receive the second persistent signal, the first grant signal and an output of the C-element as inputs; and

output a first operation mode control signal to control the first asynchronous circuit; and

a second two-level logic gate configured to:

receive the first persistent signal, the second grant signal and the output of the C-element as inputs; and

output a second operation mode control signal to control the second asynchronous circuit.

2 . The semiconductor device of claim 1 , wherein:

to sanitize the first non-persistent signal, the first asynchronous circuit is configured to:

in response to the first non-persistent signal being above a predefined threshold voltage for a predetermined amount of time, rise the first persistent signal to logic high; and

in response to the second non-persistent signal being above the predefined threshold voltage for the predetermined amount of time, rise the second persistent signal to logic high.

3 . The semiconductor device of claim 1 , wherein a gate delay provided by the control circuit is at most three gate delays.

4 . The semiconductor device of claim 1 , wherein:

in response to a rising transition of the first operation mode control signal, the first asynchronous circuit operates in a waiting mode;

in response to a falling transition of the first operation mode control signal, the first asynchronous circuit operates in a dormant mode;

in response to a rising transition of the second operation mode control signal, the second asynchronous circuit operates in the waiting mode; and

in response to a falling transition of the second operation mode control signal, the second asynchronous circuit operates in the dormant mode.

5 . The semiconductor device of claim 1 , further comprising:

a first NOR gate configured to:

receive the first non-persistent signal and the second grant signal as inputs; and

in response to the first non-persistent signal failing to be above a predefined threshold voltage for a predetermined amount of time, reset the first asynchronous circuit; and

a second NOR gate configured to:

receive the second non-persistent signal and the first grant signal as inputs; and

in response to the second non-persistent signal failing to be above the predefined threshold voltage for the predetermined amount of time, reset the second asynchronous circuit.

6 . A system comprising:

a first client;

a second client;

a resource; and

an arbiter comprising:

a first asynchronous circuit configured to:

receive a first non-persistent signal representing a first request from the first client; and

sanitize the first non-persistent signal to generate a first persistent signal;

a second asynchronous circuit configured to:

receive a second non-persistent signal representing a second request from the second client; and

sanitize the second non-persistent signal to generate a second persistent signal;

a mutual exclusive (MUTEX) circuit configured to:

arbitrate between the first persistent signal and the second persistent signal; and

output a grant signal to grant one of the first client and the second client to access the resource; and

a control circuit configured to control an operation mode of the first asynchronous circuit and the second asynchronous circuit based on a control signal, a first grant signal indicating a grant status of the first request, a second grant signal indicating a grant status of the second request, the first persistent signal and the second persistent signal, wherein the control circuit comprises:

a NAND gate configured to receive an inverse of the control signal, the first persistent signal and the second persistent signal as inputs;

a C-element configured to receive the control signal and an output of the NAND gate as inputs;

a first two-level logic gate configured to:

receive the second persistent signal, the first grant signal and an output of the C-element as inputs; and

output a first operation mode control signal to control the first asynchronous circuit; and

a second two-level logic gate configured to:

receive the first persistent signal, the second grant signal and the output of the C-element as inputs; and

output a second operation mode control signal to control the second asynchronous circuit.

7 . The system of claim 6 , wherein:

to sanitize the first non-persistent signal, the first asynchronous circuit is configured to:

in response to the first non-persistent signal being above a predefined threshold voltage for a predetermined amount of time, rise the first persistent signal to logic high; and

in response to the second non-persistent signal being above the predefined threshold voltage for the predetermined amount of time, rise the second persistent signal to logic high.

8 . The system of claim 6 , wherein a gate delay provided by the control circuit is at most three gate delays.

9 . The system of claim 6 , wherein:

in response to a rising transition of the first operation mode control signal, the first asynchronous circuit operates in a waiting mode;

in response to a falling transition of the first operation mode control signal, the first asynchronous circuit operates in a dormant mode;

in response to a rising transition of the second operation mode control signal, the second asynchronous circuit operates in the waiting mode; and

in response to a falling transition of the second operation mode control signal, the second asynchronous circuit operates in the dormant mode.

10 . The system of claim 6 , wherein the arbiter further comprises:

a first NOR gate configured to:

receive the first non-persistent signal and the second grant signal as inputs; and

in response to the first non-persistent signal failing to be above a predefined threshold voltage for a predetermined amount of time, reset the first asynchronous circuit; and

a second NOR gate configured to:

receive the second non-persistent signal and the first grant signal as inputs; and

in response to the second non-persistent signal failing to be above the predefined threshold voltage for the predetermined amount of time, reset the second asynchronous circuit.

11 . The system of claim 6 , wherein the first client, the second client, the resource and the arbiter are parts of an asynchronous system.

12 . A semiconductor device comprising:

N first asynchronous circuit configured to:

receive N non-persistent signals representing N requests; and

sanitize the N non-persistent signals to generate N persistent signals;

a mutual exclusive (MUTEX) circuit configured to:

arbitrate among the N persistent signals; and

output a grant signal to issue a grant to one of the N requests; and

a control circuit configured to control an operation mode of the N asynchronous circuits based on a control signal, N grant signals indicating grant status of the N requests and the N persistent signals, the control circuit comprises:

a NAND gate configured to receive an inverse of the control signal and the N persistent signals as inputs;

a C-element configured to receive the control signal and an output of the NAND gate as inputs; and

N multi-level logic gates configured to output N operation mode control signals to control the N asynchronous circuits.

13 . The semiconductor device of claim 12 , wherein to sanitize a non-persistent signal among the N non-persistent signals, a corresponding asynchronous circuit among the N asynchronous circuits is configured to, in response to the non-persistent signal being above a predefined threshold voltage for a predetermined amount of time, rise the persistent signal to logic high.

14 . The semiconductor device of claim 12 , wherein a gate delay provided by the control circuit is at most three gate delays.

15 . The semiconductor device of claim 12 , wherein:

in response to rising transitions of the N operation mode control signals, the N asynchronous circuits operate in a waiting mode; and

in response to falling transitions of the N operation mode control signals, the N asynchronous circuits operate in a dormant mode.

16 . The semiconductor device of claim 12 , further comprising N NOR gates, wherein each one of the N NOR gates is configured to, in response to a corresponding non-persistent signal failing to be above a predefined threshold voltage for a predetermined amount of time, reset a corresponding asynchronous circuit.

17 . The semiconductor device of claim 12 , wherein the N multi-level logic gates are three-level logic gates, and the control circuit is configured to reset the N asynchronous circuits concurrently.

18 . The semiconductor device of claim 12 , wherein the N multi-level logic gates are two-level logic gates, and the control circuit is configured to reset the N asynchronous circuits sequentially.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2023
From: SAUTTO, MARCO; SOKOLOV, DANIL; WATERWORTH, ROBERT; KHOMENKO, VICTOR
To: RENESAS ELECTRONICS AMERICA INC.
Reel/Frame 064678/0907 →
Continuity (1)
Related Publication 20250070784A1 · Feb 27, 2025
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