Magnetic device and magnetic storage device
According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.
1 . Magnetic device, comprising:
a layered body including a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic layer and the second magnetic layer; and
a side wall layer that covers a side wall of the first non-magnetic layer, wherein
the side wall layer comprises at least one first substance selected from a group consisting of silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and
the side wall layer further comprises at least one second substance selected from a group consisting of arsenic, tellurium, antimony, bismuth, and germanium.
2 . The magnetic device according to claim 1 , wherein an atomic percentage of the second substance in the side wall layer is in a range of 2 to 46 atomic percent (atm %).
3 . The magnetic device according to claim 1 , wherein the second substance is tellurium.
4 . The magnetic device according to claim 3 , wherein the first substance is aluminum oxide.
5 . The magnetic device according to claim 3 , wherein the first substance is aluminum nitride.
6 . The magnetic device according to claim 1 , wherein the first substance is zirconium oxide.
7 . The magnetic device according to claim 1 , wherein
the first substance is zirconium oxide, and
the second substance is tellurium.
8 . The magnetic device according to claim 1 , wherein the first substance is silicon oxide.
9 . The magnetic device according to claim 8 , wherein the second substance is one of antimony, arsenic, and bismuth.
10 . The magnetic device according to claim 1 , wherein the side wall layer covers a side wall of the second magnetic layer.
11 . The magnetic device according to claim 10 , wherein the side wall layer covers a side wall of the first magnetic layer.
12 . The magnetic device according to claim 1 , wherein the side wall layer covers a side wall of the first magnetic layer.
13 . The magnetic device according to claim 1 , further comprising:
a switching layer that is electrically connected to the layered body and includes at least one element selected from a group consisting of tellurium, selenium, sulfur, antimony, germanium, arsenic, and bismuth.
14 . The magnetic device according to claim 1 , further comprising:
a capping layer on the layered body;
a first wiring layer on the capping layer, the capping layer being between the first wiring layer and the layered body;
a third magnetic layer on the layered body, the layered body being between the third magnetic layer and the capping layer;
a buffer layer on the third magnetic layer, the third magnetic layer being between the layered body and the buffer layer; and
a switching layer on the buffer layer, the buffer layer being between the switching layer and the third magnetic layer.
15 . A magnetic storage device, comprising:
a plurality of first electrode wires extending in a first direction;
a plurality of second electrode wires extending in a second direction that intersects the first direction; and
a plurality of magnetic devices, each between and electrically connected to one of the plurality of first electrode wires and one of the plurality of second electrode wires, wherein
each magnetic device includes:
a layered body including a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic layer and the second magnetic layer; and
a side wall layer that covers a side wall of the first non-magnetic layer,
the side wall layer comprises at least one first substance selected from a group consisting of silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and
the side wall layer further comprises at least one second substance selected from a group consisting of arsenic, tellurium, antimony, bismuth, and germanium.
16 . The magnetic storage device according to claim 15 , wherein an atomic percentage of the second substance in the side wall layer is in a range of 2 to 46 atomic percent (atm %).
17 . The magnetic storage device according to claim 15 , wherein each magnetic device further includes:
a switching layer that is electrically connected to the layered body and includes at least one element selected from a group consisting of tellurium, selenium, sulfur, antimony, germanium, arsenic, and bismuth.
18 . The magnetic storage device according to claim 15 , wherein each magnetic device further includes:
a capping layer on the layered body;
a first wiring layer on the capping layer, the capping layer being between the first wiring layer and the layered body;
a third magnetic layer on the layered body, the layered body being between the third magnetic layer and the capping layer;
a buffer layer on the third magnetic layer, the third magnetic layer being between the layered body and the buffer layer; and
a switching layer on the buffer layer, the buffer layer being between the switching layer and the third magnetic layer.
19 . The magnetic storage device according to claim 15 , wherein the side wall layer covers an entire side wall of the layered body.
20 . The magnetic storage device according to claim 19 , wherein
the first substance is zirconium oxide, and
the second substance is tellurium.