Method for manufacturing light-emitting element
A method for manufacturing a light-emitting element includes preparing a wafer that includes a semiconductor structure body and a light-transmitting conductive film; forming a first mask on the light-transmitting conductive film; removing the light-transmitting conductive film exposed from the first mask to form an opening in the light-transmitting conductive film, the opening exposing the semiconductor structure body from under the light-transmitting conductive film; forming an n-side exposed part by removing the semiconductor structure body exposed from the first mask; removing the first mask; forming a second mask on the light-transmitting conductive film; removing the light-transmitting conductive film exposed from the second mask; forming an n-side electrode at the n-side exposed part; forming a third mask on the light-transmitting conductive film and on the semiconductor structure body; and removing the semiconductor structure body to form a groove dividing the semiconductor structure body into a plurality of element parts.
1 . A method for manufacturing a light-emitting element, the method comprising:
preparing a wafer that comprises:
a semiconductor structure body comprising an n-side layer, an active layer located on the n-side layer, and a p-side layer located on the active layer, and
a light-transmitting conductive film located on the p-side layer;
forming a first mask on the light-transmitting conductive film;
after the forming of the first mask, removing the light-transmitting conductive film exposed from the first mask to form an opening in the light-transmitting conductive film, the opening exposing the semiconductor structure body from under the light-transmitting conductive film;
after the removing of the light-transmitting conductive film exposed from the first mask, forming an n-side exposed part at which a portion of the n-side layer is exposed from the p-side layer and the active layer by removing the semiconductor structure body exposed from the first mask;
after the forming of the n-side exposed part, removing the first mask;
after the removing of the first mask, forming a second mask on the light-transmitting conductive film at a position separated from an outer edge of the light-transmitting conductive film defining the opening in a top view;
after the forming of the second mask, removing the light-transmitting conductive film exposed from the second mask to expose the p-side layer from the light-transmitting conductive film;
forming an n-side electrode at the n-side exposed part;
after the removing of the light-transmitting conductive film exposed from the second mask, forming a third mask on the light-transmitting conductive film and on the semiconductor structure body; and
after the forming of the third mask, removing the semiconductor structure body in a region not overlapping the third mask in the top view to form a groove in the semiconductor structure body, the groove dividing the semiconductor structure body into a plurality of element parts.
2 . The method according to claim 1 , wherein:
the removing of the semiconductor structure body exposed from the third mask comprises removing the semiconductor structure body so that, in a top view, a shortest distance between an outer edge of the light-transmitting conductive film and an outer edge of the n-side exposed part is greater than a shortest distance between the groove and the outer edge of the light-transmitting conductive film.
3 . The method according to claim 1 , wherein:
the removing of the light-transmitting conductive film exposed from the first mask comprises removing the light-transmitting conductive film by wet etching.
4 . The method according to claim 2 , wherein:
the removing of the light-transmitting conductive film exposed from the first mask comprises removing the light-transmitting conductive film by wet etching.
5 . The method according to claim 3 , wherein:
the removing of the light-transmitting conductive film exposed from the second mask comprises removing the light-transmitting conductive film by wet etching.
6 . The method according to claim 4 , wherein:
the removing of the light-transmitting conductive film exposed from the second mask comprises removing the light-transmitting conductive film by wet etching.
7 . The method according to claim 5 , wherein:
In the forming of the first mask comprises forming the first mask to have a plurality of openings;
the forming of the second mask comprises forming a plurality of the second masks separated from each other; and
a time of the wet etching when removing the light-transmitting conductive film exposed from the first mask is greater than a time of the wet etching when removing the light-transmitting conductive film exposed from the second masks.
8 . The method according to claim 6 , wherein:
the forming of the first mask comprises forming the first mask to have a plurality of openings;
the forming of the second mask comprises forming a plurality of the second masks separated from each other; and
a time of the wet etching when removing the light-transmitting conductive film exposed from the first mask is greater than a time of the wet etching when removing the light-transmitting conductive film exposed from the second masks.
9 . The method according to claim 1 , wherein:
the forming of the n-side exposed part by removing the semiconductor structure body exposed from the first mask comprises removing the semiconductor structure body by dry etching.
10 . The method according to claim 3 , wherein:
the forming of the n-side exposed part by removing the semiconductor structure body exposed from the first mask comprises removing the semiconductor structure body by dry etching.
11 . The method according to claim 4 , wherein:
the forming of the n-side exposed part by removing the semiconductor structure body exposed from the first mask comprises removing the semiconductor structure body by dry etching.
12 . The method according to claim 1 , wherein:
the n-side exposed part comprises an extension portion extending inward into the light-transmitting conductive film between the light-transmitting conductive film in the top view; and
the n-side electrode is formed at the extension portion.