Light-emitting devices with improved light outcoupling
Optoelectronic devices that include a composite film in a multilayered encapsulation stack are provided. Also provided are methods of forming the light reflection-modifying structures, as well as other polymeric device layers, using inkjet printing. The composite films include a first, lower refractive index domain and a second, higher refractive index domain.
1. An encapsulation stack for an optoelectronic device, the encapsulation stack comprising a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain comprises silicon oxide particles, silicon nitride particles, silicon oxynitride particles, or a combination thereof dispersed in an acrylic matrix and has a higher index of refraction than the first domain, and at least some of the particles are surface-functionalized.
2. The encapsulation stack of claim 1 , wherein the sub-domains are aligned with light-emitting pixels of the optoelectronic device.
3. The encapsulation stack of claim 1 , further comprising an inorganic barrier layer.
4. The encapsulation stack of claim 1 , wherein the sub-domains are arranged in a pattern.
5. The encapsulation stack of claim 1 , further comprising an inorganic barrier layer comprising metal oxide particles.
6. An encapsulation stack for an optoelectronic device, the encapsulation stack comprising an inorganic barrier layer and a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain comprises silicon oxide particles, silicon nitride particles, silicon oxynitride particles, or a combination thereof dispersed in an acrylic matrix and has a higher index of refraction than the first domain, wherein the composite film is adjacent to the inorganic barrier layer, the first domain has a first refractive index, the inorganic barrier layer has a second refractive index, and the first refractive index is the same as the second refractive index.
7. The encapsulation stack of claim 1 , wherein each sub-domain has a cylindrical shape, a conical shape, or a dome shape.
8. The encapsulation stack of claim 1 , wherein the first domain provides a planar surface for the encapsulation stack.
9. An encapsulation stack for an optoelectronic device, the encapsulation stack comprising an inorganic barrier layer and a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain comprises silicon oxide particles, silicon nitride particles, silicon oxynitride particles, or a combination thereof dispersed in an acrylic matrix and has a higher index of refraction than the first domain, wherein the inorganic barrier layer comprises inorganic oxide particles.
10. An optoelectronic device comprising:
a plurality of light-emitting pixels;
an inorganic barrier layer; and
an encapsulation stack disposed over the plurality of light-emitting pixels, the encapsulation stack comprising a composite film having a first domain and a second domain, the second domain comprising a plurality of sub-domains, each sub-domain comprising oxide, nitride, or oxynitride inorganic particles, at least some of the particles having surface-functionalization, the particles dispersed in a polymeric matrix that is acrylic, epoxy, urethane, or a combination thereof, and that has a higher index of refraction than the first domain.
11. The optoelectronic device of claim 10 , wherein the sub-domains are arranged in a pattern.
12. The optoelectronic device of claim 10 , wherein the sub-domains are arranged in clusters over the plurality of light-emitting pixels.
13. The optoelectronic device of claim 10 , wherein the composite film is adjacent to the inorganic barrier layer, the first domain has a first refractive index, the inorganic barrier layer has a second refractive index, and the first refractive index is the same as the second refractive index.
14. The optoelectronic device of claim 10 , wherein a refractive index of the sub-domains and a refractive index of the inorganic barrier layer differ by no more than 15%.
15. The optoelectronic device of claim 10 , wherein each sub-domain has a cylindrical shape, a conical shape, or a dome shape.
16. The optoelectronic device of claim 10 , wherein the first domain provides a planar surface of the composite film.
17. The optoelectronic device of claim 10 , wherein a first surface of the composite film is defined by the first domain and a second surface of the composite film, opposite from the first surface, is defined by the first domain and the second domain.
18. The optoelectronic device of claim 10 , wherein the sub-domains are arranged in an irregular pattern.
19. The optoelectronic device of claim 10 , wherein the sub-domains vary in size.