Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
1. A secondary ion mass spectrometry (SIMS) system, comprising:
a stage configured to support an internal sample;
a primary ion source and ion optics configured to produce and direct a primary ion beam to the internal sample;
an extraction lens directed at the stage, the extraction lens configured to extract secondary ions emitted from the internal sample;
a detection unit;
a movement mechanism configured to periodically move the internal sample of multiple internal samples to a position located within a field of view of the extraction lens; and
a processor that is configured to periodically check one or more aspects of the primary ion beam based on a detection, by the detection unit, of the secondary ions emitted from the internal sample.
2. The SIMS system according to claim 1 , wherein the stage is further configured to support a wafer that differs from the internal sample; the primary ion source and the ion optics are further configured to produce and direct a primary ion beam to the wafer, the extraction lens is further configured to extract secondary ions emitted from the wafer.
3. The SIMS system according to claim 2 , further comprising a charge compensation system configured to produce and direct an electron beam to the wafer, based on a wafer charge indication that is generated by the detection unit.
4. The SIMS system according to claim 3 , wherein the movement mechanism is further configured to periodically move other internal samples of multiple internal sample to a position that is located within the field of view of the extraction lens; and wherein the processor is configured to periodically check the one or more aspects of the primary ion beam also based on a detection, by the detection unit, of secondary ions emitted from the other internal samples.
5. The SIMS system according to claim 3 , wherein the charge compensation system is configured to control at least one of a current or power of the electron beam based on a shift in a kinetic energy of the secondary ions and an overall energy distribution of the secondary ions.
6. The SIMS system according to claim 3 , wherein the wafer charge indication is indicative of a location of the secondary ions at a location wherein the secondary ions are spread according to energy.
7. The SIMS system according to claim 1 , wherein the SIMS system is configured to check a calibration of the SIMS system and to update the calibration automatically.
8. The SIMS system according to claim 1 , wherein the SIMS system is configured to applies a low extraction field at a secondary extraction lens of a SIMS measurement system, the low extraction field has an absolute value that does not exceed 10 volts per millimeter.
9. The SIMS system according to claim 8 , configured to raster scan the primary ion beam within an area of fifty microns by fifty microns.
10. The SIMS system according to claim 1 , wherein the movement mechanism is a transfer robot.
11. The SIMS system according to claim 1 , wherein the multiple internal samples are layers of different material of predefined thickness and the one or more aspects comprise a primary ion beam sputtering rate.
12. The SIMS system according to claim 1 , wherein the multiple internal samples are layers of different material of predefined thickness and the one or more aspects comprise a primary ion beam raster scan uniformity.
13. The SIMS system according to claim 1 , wherein the multiple internal samples comprise patterned boxed of known dimensions and the one or more aspects comprise a primary ion beam raster scan size and position.
14. A secondary ion mass spectrometry (SIMS) method, comprising:
A periodically providing, by a movement mechanism, an internal sample of multiple internal samples to a position located within a field of view of an extraction lens;
producing and directing, by a primary ion source and ion optics, a primary ion beam to an internal sample while the internal sample is supported by a stage;
extracting, by the extraction lens, secondary ions emitted from the internal sample;
generating, by a detection unit, detection signals; and
periodically checking, by a processor, one or more aspects of the primary ion beam based on the detection signals.
15. The SIMS method according to claim 14 , further comprising producing and directing, by a charge compensation system, an electron beam to a wafer based on a wafer charge indication that is generated by the detection unit.
16. The SIMS method according to claim 14 , wherein the wafer charge indication is indicative of a location of the secondary ions at a location wherein the secondary ions are spread according to energy.
17. The SIMS method according to claim 14 , further comprising
producing and directing, by the primary ion source and the ion optics, a primary ion beam to a wafer while the wafer is supported by the stage;
extracting, by the extraction lens, secondary ions emitted from the stage; and
generating, by the detection unit, detection signals.
18. A non-transitory machine-readable medium having stored thereon instructions executable by a secondary ion mass spectrometry (SIMS) system for:
periodically providing, by a movement mechanism, an internal sample of multiple internal samples to a position located within a field of view of an extraction lens;
producing and directing, by a primary ion source and ion optics, a primary ion beam to an internal sample while the internal sample is supported by a stage;
extracting, by an extraction lens directed at the stage, secondary ions emitted from the internal sample;
generating, by a detection unit, detection signals; and
periodically checking, by a processor, one or more aspects of the primary ion beam based on the detection signals.