Electronic device including s-shaped staggered contacts
An electronic device including an active device region, disposed at least partially in a first level, the active device region comprising an array of active device features, an array of device structures, disposed in a second level, above the first level, and a contact level, comprising an array of staggered contacts, wherein the array of staggered contacts electrically connect the array of active device features to the array of device structures, and wherein the array of staggered contacts are characterized by an S-shaped cross-section.
1 . An electronic device, comprising:
an active device region, disposed at least partially in a first level, the active device region comprising an array of active device features;
a contact level, disposed above the first level and comprising an array of contacts; and
an array of device structures, disposed in a second level above the contact level;
wherein the array of contacts electrically connect the array of active device features in the first level to the array of device structures in the second level, and wherein the array of contacts are characterized by an S-shaped cross-section.
2 . The electronic device of claim 1 , wherein the array of contacts comprise an S-shaped deposit layer, and a seed layer, disposed subjacent to the S-shaped deposit layer.
3 . The electronic device of claim 2 , wherein the seed layer comprises a first material and the S-shaped deposit layer comprises a second material, different than the first material.
4 . An electronic device, comprising:
an active device region, disposed at least partially in a first level, the active device region comprising an array of active device features;
a contact level, disposed above the first level and comprising an array of contacts; and
an array of device structures, disposed in a second level above the contact level;
wherein the array of contacts electrically connect the array of active device features in the first level to the array of device structures in the second level, and wherein the array of contacts are characterized by an S-shaped cross-section,
wherein the electronic device comprises a memory device, wherein the array of devices structures comprises an array of capacitors, wherein the first level and the second level extend parallel to a substrate plane, wherein a given capacitor of the array of capacitors is electrically connected by a given staggered contact to a given active device feature, and wherein an entirety of the given capacitor does not overlap the active device feature within the substrate plane.
5 . The electronic device of claim 4 , wherein the array of contacts comprise an S-shaped deposit layer, and a seed layer, disposed subjacent to the S-shaped deposit layer.
6 . The electronic device of claim 5 , wherein the seed layer comprises a first material and the S-shaped deposit layer comprises a second material, different than the first material.